TSM5NS50CP [TSC]
500V N-Channel Power MOSFET; 500V N沟道功率MOSFET
| 型号： | TSM5NS50CP |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 500V N-Channel Power MOSFET |
| 文件： | 总6页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM2N7002
60V N-Channel MOSFET
PRODUCT SUMMARY
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
VDS (V)
RDS(on)(Ω)
ID (mA)
300
7.5 @ VGS = 10V
7.5 @ VGS = 4.5V
60
200
Features
Block Diagram
●
●
Fast Switching Speed
Low Input and Output Leakage
Application
●
●
Direct Logic-Level Interface: TTL/CMOS
Solid-State Relays
Ordering Information
Part No.
Package
SOT-23
Packing
TSM2N7002CX RF
3Kpcs / 7” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
60
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VDS
VGS
ID
±20
300
V
mA
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
IDM
IS
800
300
mA
mA
Ta = 25oC
Ta = 75oC
350
220
Maximum Power Dissipation
PD
mW
Operating Junction Temperature
TJ
+150
oC
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
Thermal Performance
Parameter
Symbol
TL
Limit
5
Unit
S
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
RӨJA
357
oC/W
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
1/6
Version: A07
TSM2N7002
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
VGS = 0V, ID = 10µA
BVDSS
VGS(TH)
IGSS
60
1.0
--
--
--
--
2.5
±100
1.0
7.5
7.5
--
V
V
VDS = VGS, ID = 250µA
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
VGS = 10V, ID = 300mA
VGS = 4.5V, ID = 200mA
VDS = 15V, ID = 300mA
IS = 300mA, VGS = 0V
--
nA
µA
Zero Gate Voltage Drain Current
IDSS
--
--
--
--
Drain-Source On-State Resistance
RDS(ON)
Ω
--
--
Forward Transconductance
Diode Forward Voltage
Dynamicb
gfs
--
320
0.9
mS
V
VSD
--
1.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
0.4
0.06
0.06
50
0.6
--
VDS = 10V, ID = 250mA,
VGS = 4.5V
nC
pF
--
--
VDS = 25V, VGS = 0V,
f = 1.0MHz
25
--
5
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
tf
--
--
--
--
7.5
6
20
--
VDD = 30V,
ID = 100mA, VGEN = 10V,
RG = 10Ω
nS
7.5
3
20
--
Turn-Off Fall Time
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
Version: A07
TSM2N7002
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A07
TSM2N7002
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: A07
TSM2N7002
60V N-Channel MOSFET
SOT-23 Mechanical Drawing
SOT-23 DIMENSION
MILLIMETERS
MIN MAX
0.95 BSC
1.9 BSC
2.60
INCHES
MIN MAX.
DIM
A
A1
B
C
D
E
F
0.037 BSC
0.074 BSC
3.00
1.70
3.10
1.30
0.10
0.50
0.20
0.60
10º
0.102
0.118
0.067
0.122
0.051
0.004
0.020
0.008
0.024
10º
1.40
2.80
1.00
0.00
0.35
0.10
0.30
5º
0.055
0.110
0.039
0.000
0.014
0.004
0.012
5º
G
H
I
J
Marking Diagram
2N = Device Code
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
5/6
Version: A07
TSM2N7002
60V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
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and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
6/6
Version: A07
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