TSM60NB190CI [TSC]
N-Channel Power MOSFET 600V, 18A, 0.19Ω;
| 型号： | TSM60NB190CI |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | N-Channel Power MOSFET 600V, 18A, 0.19Ω |
| 文件： | 总8页 (文件大小：830K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM60NB190CI
TSM60NB190CZ
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 18A, 0.19Ω
FEATURES
KEY PERFORMANCE PARAMETERS
● Super-Junction technology
PARAMETER
VALUE
UNIT
● High performance, small RDS(ON)*Qg figure of merit (FOM)
● High ruggedness performance
● 100% UIS tested
VDS
RDS(on) (max)
Qg
600
V
0.19
31
Ω
nC
● High commutation performance
● Pb-free plating
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Power Supply
● AC/DC LED Lighting
ITO-220
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
ITO-220
TO-220
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
600
V
V
VGS
±30
18
TC = 25°C
A
Continuous Drain Current (Note 1)
ID
TC = 100°C
10.8
54
A
Pulsed Drain Current (Note 2)
IDM
PDTOT
EAS
A
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
33.8
150.6
W
mJ
A
212.9
2.6
IAS
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
RӨJC
ITO-220
3.7
TO-220
0.83
UNIT
°C/W
°C/W
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
RӨJA
62
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air.
1
Version: D1608
TSM60NB190CI
TSM60NB190CZ
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX UNIT
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VGS = ±30V, VDS = 0V
VDS = 600V, VGS = 0V
BVDSS
VGS(TH)
IGSS
600
2.0
--
--
3.0
--
--
4.0
±100
1
V
V
nA
µA
Zero Gate Voltage Drain Current
IDSS
--
--
Drain-Source On-State Resistance
(Note 4)
VGS = 10V, ID = 6A
RDS(on)
--
0.17
0.19
Ω
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Gate Resistance
Qg
Qgs
Qgd
Ciss
Coss
Rg
--
--
--
--
--
--
31
8
--
--
--
--
--
--
VDS = 380V, ID = 18A,
VGS = 10V
nC
12.6
1273
92
VDS = 100V, VGS = 0V,
f = 1.0MHz
pF
F = 1MHz, open drain
3.1
Ω
Switching (Note 6)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
--
--
--
--
36
21
95
21
--
--
--
--
VDD = 380V,
RGEN = 25Ω,
ns
ID = 18A, VGS = 10V,
Source-Drain Diode
Forward On Voltage (Note 4)
Reverse Recovery Time
Reverse Recovery Charge
--
--
--
--
1.4
--
V
IS = 18A, VGS = 0V
VSD
trr
359.4
4.54
ns
μC
VR=100V, IS = 18A
--
dIF/dt = 100A/μs
Qrr
Notes:
1. Current limited by package.
2. Pulse width limited by the maximum junction temperature.
3. L = 63mH, IAS = 2.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
PACKAGE
ITO-220
PACKING
TSM60NB190CI C0G
TSM60NB190CZ C0G
50pcs / Tube
50pcs / Tube
TO-220
2
Version: D1608
TSM60NB190CI
TSM60NB190CZ
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
ID, Drain Current (A)
Qg, Gate Charge (nC)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Current vs. Voltage
VSD, Body Diode Forward Voltage (V)
TJ, Junction Temperature (°C)
3
Version: D1608
TSM60NB190CI
TSM60NB190CZ
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
VDS, Drain to Source Voltage (V)
TJ, Junction Temperature (°C)
Maximum Safe Operating Area (ITO-220)
Maximum Safe Operating Area (TO-220)
VDS, Drain to Source Voltage (V)
VDS, Drain to Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220)
101
0
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-1
10-2
10-4
10-3
101
10-2
10-1
100
Square Wave Pulse Duration (s)
4
Version: D1608
TSM60NB190CI
TSM60NB190CZ
Taiwan Semiconductor
Normalized Thermal Transient Impedance, Junction-to-Case (TO-220)
101
100
Duty=0.5
Duty=0.2
Duty=0.1
10-1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-2
10-4
10-1
10-2
10-3
Square Wave Pulse Duration (s)
5
Version: D1608
TSM60NB190CI
TSM60NB190CZ
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
ITO-220
MARKING DIAGRAM
G
Y
= Halogen Free
= Year Code
WW = Week Code (01~52)
= Factory Code
F
6
Version: D1608
TSM60NB190CI
TSM60NB190CZ
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-220
MARKING DIAGRAM
G
Y
= Halogen Free
= Year Code
WW = Week Code (01~52)
= Factory Code
F
7
Version: D1608
TSM60NB190CI
TSM60NB190CZ
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular
purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
8
Version: D1608
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