TSS54U [TSC]
0.2Amp Surface Mount Schottky Barrier Diode; 0.2Amp表面贴装肖特基二极管
| 型号： | TSS54U |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 0.2Amp Surface Mount Schottky Barrier Diode |
| 文件： | 总2页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSS54U
0.2Amp Surface Mount Schottky Barrier
Diode
Pb
RoHS
COMPLIANCE
0603
Features
Designed for mounting on small surface
Extremely thin/leadless package
Low capacitance
Low forward voltage drop
High temperature soldering:
260oC/10 seconds at terminals
Chip version in 0603
ITEM
L
0603
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
0.018(0.45)
Typical
Mechanical Data
W
T
Case: 0603 Standard package, molded plastic
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
C
D
Polarity: Indicated by cathode band
Mounting position: Any
Package code: RZ
0.028(0.70)
Typical
Weight: 0.003 gram (approximately)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
0603
Units
Repetitive Peak Reverse Voltage
VRRM
30
V
DC Reverse Voltage
RMS Reverse Voltage
VR
30
21
V
V
VR(RMS)
Average Forward Current
IO
IFRM
200
300
mA
mA
Repetiitive Peak Forward Current
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Power Dissipation
Forward Voltage
IFSM
Pd
600
mA
150
0.24
0.32
0.4
0.5
1.0
2
mW
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VF
V
Reverse Leakage Current
IR
uA
pF
Typical capacitance between terminals
VR=1V, f =1.0MHz reverse voltage
Reverse Recovery Time
(IF=IR=10mA, Irr=0.1 x IR, RL=100Ώ)
Junction Temperature
CJ
10
5
Trr
nS
TJ
TSTG
-65 to + 125
-65 to + 125
oC
oC
Storage Temperature
Version: A07
RATINGS AND CHARACTERISTIC CURVES(TSS54U)
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7
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1
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1 0 n
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3
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f = 1 M H z
T A = 2 5 C
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1
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8
6
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2
0
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2
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5
1
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1
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2
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3
0
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2
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Version: A07
相关型号：
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