TSS70L [TSC]
0.07Amp Surface Mount Schottky Barrier; 0.07Amp表面贴装肖特基
| 型号： | TSS70L |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 0.07Amp Surface Mount Schottky Barrier |
| 文件： | 总2页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSS70L
0.07Amp Surface Mount Schottky Barrier
Diode
Pb
RoHS
COMPLIANCE
1005
Features
Designed for mounting on small surface
Extremely thin/leadless package
Low capacitance
Low forward voltage drop
High temperature soldering:
260oC/10 seconds at terminals
Chip version in 1005
ITEM
L
1005
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
0.020(0.50)
Typical
Mechanical Data
W
T
Case: 1005 Standard package, molded plastic
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
C
D
Polarity: Indicated by cathode band
Mounting position: Any
Package code: RW
0.040(1.00)
Typical
Weight: 0.006 gram (approximately)
Dimensions in inches and (millimeters)
Maximum Ratings T =25 oC unless otherwise specified
A
Type Number
Symbol
1005
Units
Repetitive Peak Reverse Voltage
70
VRRM
V
Reverse Voltage
70
49
70
VR
VR(RMS)
IO
V
V
mA
RMS Reverse Voltage
Average Forward Current
Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
100
200
0.41
1.0
IFSM
mA
Power Dissipation
Pd
VF
IR
mW
V
Forward Voltage
IF=1mA
IF=15mA
Reverse Leakage Current VR=50V
0.1
uA
pF
Typical capacitance between terminals
VR=0V, f =1.0MHz reverse voltage
Reverse Recovery Time
(IF=IR=10mA, Irr=0.1x IR, RL=100Ώ)
Junction Temperature
2
CJ
5
Trr
nS
TJ
TSTG
oC
-65 to + 125
-65 to + 125
oC
Storage Temperature
Version: A07
RATINGS AND CHARACTERISTIC CURVES(TSS70L)
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5
7
C
5
2
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1
2
5
C
C
0
4
1 0 u
1 u
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C
0
-
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7
5
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1 0 n
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2
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6
0
1
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2 0
3 0
4 0
5
0
6 0
7 0
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(
V
)
R
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v
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(
V
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F i g . 3 - C a p a c i t a n c e b e t w e e n
t e r m i n a l s c h a r a c t e r i s t i c s
F
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4
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6
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0 . 8
0 . 6
0 . 4
0 . 2
0
8
0
6
4
2
0
0
0
0
0
5
1
0
1
5
2
0
2
5
3
0
3
5
4
0
0
2
5
5
0
7
5
1
0
0
1
2
5
1
5
0
O
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(
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)
A
m
b
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t
t
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m
p
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r
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(
C
)
Version: A07
相关型号：
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