2SA1314 [TYSEMI]
Low Saturation Voltage VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package; 低饱和电压VCE （SAT） = -0.5V （最大值） （ IC = -2A ， IB = -50mA ）小型扁平封装
| 型号： | 2SA1314 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low Saturation Voltage VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package |
| 文件： | 总2页 (文件大小：393K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
2SA1314
Features
Low Saturation Voltage
: VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA)
Small Flat Package
Complementary to 2SC2982
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulsed) *1
Base Current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
-20
-10
V
-6
V
-2
-4
A
ICP
A
IB
-2
A
PC
500
Collector Power Dissipation
mW
PC *2
Tj
1000
150
Jumction temperature
Storage temperature Range
Tstg
-55 to +150
*1 Pulse test: pulse width = 10ms (max), duty cycle = 30% (max)
*2 Mounted on ceramic substrate (250 mm2 x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
Min
Typ
Max
-100
-100
Unit
nA
nA
V
Collector Cut-off Current
VCB = -20V , IE = 0
VEB = -6V , IC = 0
Emitter Cut-off Current
IEBO
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CEO IC = -10mA , IB = 0
V(BR)EBO IE = -1mA , IC = 0
-10
-6
V
VCE = -1V , IC = -0.5A
hFE
VCE = -1V , IC = -4A
140
60
600
-0.5
DC Current Gain
120
-0.2
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(sat) IC = -2A , IB = -50mA
V
V
VBE
fT
VCE = -1V , IC = -2A
VCE = -1V , IC = -0.5A
-0.83 -1.5
Transition Frequency
140
50
MHz
pF
Collector Output Capacitance
Cob
VCB = -10V , IE = 0 , f = 1MHz
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Product specification
2SA1314
hFE Classification
T
Marking
Rank
A
B
C
hFE
140
280
200
400
300
600
Electrical Characteristics Curves
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sales@twtysemi.com
4008-318-123
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