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2SC3647 [TYSEMI]

Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity; 采用FBET的， MBIT流程击穿电压高，电流容量大
2SC3647
型号： 2SC3647
厂家： TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述：

Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
采用FBET的， MBIT流程击穿电压高，电流容量大
文件： 总3页 (文件大小：580K)
中文：  中文翻译
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