2SC5161 [TYSEMI]

High breakdown voltage.VCEO = 400V NPN silicon transistor; 高击穿voltage.VCEO = 400V NPN硅晶体管


型号：	2SC5161
厂家：	TY Semiconductor Co., Ltd
描述：	High breakdown voltage.VCEO = 400V NPN silicon transistor 高击穿voltage.VCEO = 400V NPN硅晶体管晶体晶体管
文件：	总2页 (文件大小：169K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSMMDD TTyyppee

Product specification

2SC5161

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

Features

-0.2

Low V^CE(sat).

V^CE(sat)= 0.15V (Typ.),I^C/ I^B= 1A / 0.2A

High breakdown voltage.V^CEO= 400V

Fast switching.t^r= 1.0ìs,I^C= 0.8A

NPN silicon transistor

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current *

Collector current

Symbol

V^CBO

V^CES

V^EBO

I^CP

Rating

Unit

400

A(Puse)

A(DC)

I^C

Collector power dissipation

T^C= 25

Ta = 25

P^C

Junction temperature

Storage temperature

* Single pulse pw=10ms

T^j

150

T^stg

-55 to +150

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SSMMDD TTyyppee

Product specification

2SC5161

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

collector-emitter breakdown voltage

collector-emitter voltage

Emitter-base breakdown voltage

collecotr cutoff current

Emitter cutoff current

Symbol

B^VCBO

B^VCEO

V^CEO(SUS)

B^VEBO

I^CBO

Testconditons

Min

400

Typ

Max

Unit

I^C=50ìA

I^C=1mA

I^C=1.0A,I^B1=0.1A,L=1mH

I^E=50ìA

V^CB=400V

ìA

I^EBO

VEB=7V

Collector to emitter saturation voltage

Base to emitter saturation voltage

DC current transfer ratio

Transition frequency

V^CE(sat)

V^BE(sat)

h^FE

I^C/I^B=1A/0.2A

1.5

V^CE=5V,I^C=0.1A

V^CE=10V.I^E=-0.1A.f=5MHz

V^CB=10V,I^E=0A,f=1MHz

f^T

MHz

Output capacitance

cob

Turn-on time

t^on

2.5

ìs

I^C=0.8A,R^L=250Ù

I^B1=-I^B2=0.08A

Storage time

t^stg

ìs

Fall time

t^f

V^CC=200V

ìs

hFE Classification

ltem

hFE

25 to 50

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