2SD1367 [TYSEMI]
Low frequency power amplifier. Collector to base voltage VCBO 20 V; 低频功率放大器。集电极基极电压VCBO 20 V
| 型号： | 2SD1367 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low frequency power amplifier. Collector to base voltage VCBO 20 V |
| 文件： | 总1页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
Product specification
2SD1367
Features
Low frequency power amplifier.
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
20
16
V
6
V
2
A
Peak collector current
Collector power dissipation
Junction temperature
ICP *1
PC *2
Tj
3
A
1
W
150
Storage temperature
Tstg
-55 to +150
*1. PW
10 ms; d
0.02.
*2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)CBO IC = 10 ìA, IE = 0
V(BR)CEO
Testconditons
Min
20
16
6
Typ
Max
Unit
V
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
V
IC = 1 mA, RBE =
V(BR)EBO IE = 10 ìA, IC = 0
V
ICBO
IEBO
hFE
VCB = 16 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V,IC = 0.1 A
0.1
0.1
500
0.3
1.2
ìA
ìA
Emitter cutoff current
DC current transfer ratio
100
Collector to emitter saturation voltage
Base to emitter saturation voltage
Gain bandwidth product
VCE(sat) IC = 1 A,IB = 0.1 A
VBE(sat) IC = 1 A,IB = 0.1 A
0.15
0.9
100
20
V
V
fT
VCE = 2 V,IC = 10 mA
MHz
pF
Collector output capacitance
Cob
VCB = 10 V, IE = 0,f = 1 MHz
hFE Classification
Marking
hFE
BA
BB
BC
250 500
100 200
160 320
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