2SK3794 [TYSEMI]

Low On-state resistance RDS(on)1 = 44 m MAX. Built-in gate protection diode; 低通态电阻RDS（on ） 1 = 44 m最大。内置栅极保护二极管


型号：	2SK3794
厂家：	TY Semiconductor Co., Ltd
描述：	Low On-state resistance RDS(on)1 = 44 m MAX. Built-in gate protection diode 低通态电阻RDS（on ） 1 = 44 m最大。内置栅极保护二极管晶体栅极二极管晶体管开关
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SMD Type

MOSFICET

Product specification

2SK3794

TO-252

Unit: mm

+0.15

-0.15

+0.1

2.30

-0.1

6.50

Features

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Low On-state resistance

R^DS(on)1= 44 mÙ MAX. (V^GS= 10 V, I^D= 10 A)

R^DS(on)2= 78 mÙ MAX. (V^GS= 4.0 V, I^D= 10 A)

Low C ^iss: C ^iss= 760 pF TYP.

Built-in gate protection diode

0.127

max

+0.1

0.80

-0.1

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

VGSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

1.5

Power dissipation

T^A=25

T^C=25

P^D

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Symbol

I^DSS

Testconditons

Min

Typ

Max

Unit

V^DS=60V,V^GS=0

VGS= 20V,VDS=0

V^DS=10V,I^D=1mA

V^DS=10V,I^D=10A

V^GS=10V,I^D=10A

V^GS=4.0V,I^D=10A

Gate leakage current

Gate cut off voltage

I^GSS

V^GS(off)

Y^fs

2.5

7.0

3.5

4.5

Forward transfer admittance

R^DS(on)1

m Ù

Drain to source on-state resistance

R^DS(on)2

C^iss

C^oss

Crss

t^on

760

150

m Ù

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

V^DS=10V,V^GS=0,f=1MHZ

t^r

170

I^D=10A,V^GS(on)=10V,R^G=0 ,V^DD=30V

Turn-off delay time

Fall time

t^off

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

V^DD= 48V

V^GS= 10 V

I^D=10A

Q^GS

Q^GD

3.0

4.7

http://www.twtysemi.com

sales@twtysemi.com

1 of 1

4008-318-123

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