BAS70-06 [TYSEMI]
Low forward current High breakdown voltage Guard ring protected Low diode capacitance.; 低正向电流高击穿电压保护环保护的低电容二极管。
| 型号： | BAS70-06 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low forward current High breakdown voltage Guard ring protected Low diode capacitance. |
| 文件： | 总1页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
BAS70 series
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Low forward current
High breakdown voltage
Guard ring protected
Small plastic SMD package
Low diode capacitance.
1
2
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
-0.1
1.9
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
Storage temperature
Symbol
VR
Conditions
Min
Max
70
Unit
V
IF
70
mA
mA
mA
IFRM
IFSM
Tstg
Tj
70
tp
1 s; ä
0.5
tp < 10 ms
100
+150
150
+150
500
-65
-65
Junction temperature
Operating ambient temperature
thermal resistance from junction to ambient
Tamb
Rth j-a
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
VF
Conditions
IF = 1 mA
IF = 10 mA
IF = 15 mA
Max
410
750
1
Unit
mV
mV
V
Forward voltage
VR = 50 V; note 1
VR = 70 V; note 1
IF = 5 mA
100
10
nA
A
Reverse voltage leakage current
IR
Charge carrier life time (Krakauer method)
100
2
ps
Diode capacitance
Note
Cd
f = 1 MHz; VR = 0;
pF
1. Pulse test: tp = 300
s; ä = 0.02
Marking
Type
BAS70
73*
BAS70-04
74*
BAS70-05
75*
BAS70-06
76*
BAS70-07
77p
Marking
http://www.twtysemi.com
sales@twtysemi.com
1 of 1
4008-318-123
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