DMP2130L [TYSEMI]
P-CHANNEL ENHANCEMENT MODE MOSFET Low Input/Output Leakage; P沟道增强型MOSFET的低输入/输出泄漏
| 型号： | DMP2130L |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET Low Input/Output Leakage |
| 文件： | 总2页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
DMP2130L
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
•
Case: SOT23
•
Low RDS(ON)
:
Case Material - Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 0.008 grams (approximate)
•
•
•
75 mΩ @VGS = -4.5V
110 mΩ @VGS = -2.7V
125 mΩ @VGS = -2.5V
•
•
•
•
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1, 2 and 3)
•
•
•
Qualified to AEC-Q101 Standards for High Reliability
Drain
SOT23
D
Gate
S
G
Source
Top View
Internal Schematic
Top View
Ordering Information (Note 4)
Part Number
Case
Packaging
DMP2130L-7
SOT23
3000/Tape & Reel
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
Marking Information
MP1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
MP1
M = Month (ex: 9 = September)
Date Code Key
Year
2007
2008
2009
2010
2011
2012
Code
U
V
W
X
Y
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
http://www.twtysemi.com
sales@twtysemi.com
1 of 2
Product specification
DMP2130L
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Unit
V
Gate-Source Voltage
V
VGSS
±12
Drain Current (Note 5) Continuous
TA = 25°C
TA = 70°C
-3.0
-2.4
A
ID
Pulsed Drain Current (Note 6)
-15
2.0
A
A
IDM
IS
Body-Diode Continuous Current (Note 5)
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
PD
Value
1.4
Unit
W
Thermal Resistance, Junction to Ambient (Note 5); Steady-State
Operating and Storage Temperature Range
90
°C/W
°C
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
STATIC PARAMETERS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
-20
⎯
⎯
V
μA
nA
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
⎯
⎯
-1
ID = -250μA, VGS = 0V
TJ = 25°C
V
V
DS = -20V, VGS = 0V
DS = 0V, VGS = ±12V
IGSS
±100
-1.25
⎯
-0.6
VGS(th)
ID (ON)
VDS = VGS, ID = -250μA
VGS = -4.5V, VDS = -5V
On State Drain Current (Note 7)
-15
A
V
GS = -4.5V, ID = -3.5A
VGS = -2.7V, ID = -3.0A
GS = -2.5V, ID = -2.6A
51
87
99
75
110
125
Static Drain-Source On-Resistance (Note 7)
RDS (ON)
⎯
mΩ
V
Forward Transconductance (Note 7)
Diode Forward Voltage (Note 7)
7.3
0.79
⎯
S
V
A
gFS
VSD
IS
⎯
⎯
⎯
⎯
-1.26
1.7
VDS = -10V, ID = -3.0A
IS = -1.7A, VGS = 0V
⎯
Maximum Body-Diode Continuous Current (Note 5)
DYNAMIC PARAMETERS (Note 8)
Total Gate Charge
7.3
2.0
1.9
12
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Qg
Qgs
Qgd
tD(on)
tr
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VGS = -4.5V, VDS = -10V, ID = -3.0A
VGS = -4.5V, VDS = -10V, ID = -3.0A
VGS = -4.5V, VDS = -10V, ID = -3.0A
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
20
V
DS = -10V, VGS = -4.5V,
Turn-Off Delay Time
38
RL = 10Ω, RG = 6Ω
tD(off)
tf
Turn-Off Fall Time
41
Input Capacitance
443
128
101
Ciss
Coss
Crss
VDS = -16V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Notes:
3. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.
4. Repetitive Rating, pulse width limited by junction temperature.
5. Test pulse width t = 300μs.
6. Guaranteed by design. Not subject to production testing.
http://www.twtysemi.com
sales@twtysemi.com
2 of 2
相关型号：
©2020 ICPDF网 联系我们和版权申明