DMP2225L-7 [TYSEMI]
P-CHANNEL ENHANCEMENT MODE MOSFET Low Input/Output Leakage; P沟道增强型MOSFET的低输入/输出泄漏
| 型号： | DMP2225L-7 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET Low Input/Output Leakage |
| 文件： | 总2页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
DMP2225L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
ID
•
•
•
•
•
•
•
Low On-Resistance:
V(BR)DSS
RDS(ON)
Package
TA = +25°C
Low Input Capacitance
-2.6A
-2.0A
110mΩ @ VGS = -4.5V
225mΩ @ VGS = -2.5V
-20V
SOT23
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
)
Mechanical Data
performance, making it ideal for high efficiency power management
applications.
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Applications
•
•
•
•
General Purpose Interfacing Switch
Power Management Functions
•
•
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
S
G
Source
Top View
Top View
Equivalent Circuit
Ordering Information
Part Number
DMP2225L-7
DMP2225LQ-7
Qualification
Commercial
Automotive
Case
SOT-23
SOT-23
Packaging
3000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
2P2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
2P2
M = Month (ex: 9 = September)
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
Code
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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Product specification
DMP2225L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
Value
-20
±12
-2.6
-2
Units
V
V
Stead
State
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
ID
A
A
IDM
8
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
PD
Value
1.08
Units
W
115
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
RθJA
-55 to +150
T
J, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
-6
—
—
—
—
—
—
-800
—
V
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VDS ≤ -5V, VGS = -4.5V
VDS ≤ -5V, VGS = -2.5V
nA
On-State Drain Current
A
ID(ON)
IGSS
-3
—
Gate-Source Leakage
—
±80
nA
V
GS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.45
—
—
-1.25
V
VGS(th)
V
DS = VGS, ID = -250µA
VGS = -4.5V, ID = -2.6A
VGS = -2.5V, ID = -2.0A
VDS = -5V, ID = -2.6A
80
165
110
225
Static Drain-Source On-Resistance
mΩ
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS
Input Capacitance
—
—
4
—
S
V
|Yfs|
VSD
—
-1.26
V
GS = 0V, IS = -2.6A
—
—
—
—
—
—
—
250
88
—
—
—
16
5.3
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
V
DS = -10V, VGS = 0V
Output Capacitance
f = 1.0MHz
GS = 0V, VDS = 0V, f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
58
12
V
Total Gate Charge
4.3
0.9
2.1
Qg
VGS = -4.5V, VDS = -10V,
D = -2.7A
Gate-Source Charge
nC
Qgs
Qgd
I
Gate-Drain Charge
Notes:
3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
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