FML10 [TYSEMI]
Tr1: Low VCE(sat), Small package; TR1 ：低VCE （SAT） ，小型封装
| 型号： | FML10 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Tr1: Low VCE(sat), Small package |
| 文件： | 总3页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Product specification
FML10
■ Features
Unit: mm
● Tr1: Low VCE(sat)
● Di : Low VF
5
4
● Small package
(3)
(2)
(1)
1
2
3
Di2
Tr1
(4)
(5)
■ Absolute Maximum Ratings Ta = 25℃
Tr1
Parameter
Symbol
Rating
Unit
V
Collector-base voltage
VCBO
VCEO
VEBO
IC
15
Collector-emitter voltage
Emitter-base voltage
12
V
6
1.5
V
Collector current
A
Power dissipation
PD
200
mW
℃
Operating and Storage and Temperature Range
Tj, TSTG
-40 to +125
Di2
Parameter
Symbol
Rating
Unit
V
Reak reverse voltage
VRM
VR
IF
25
20
V
Reverse voltage (DC)
mA
A
Average rectified forward current
700
Forward current surge peak (60HZ, 1∞)
IFSM
3
Operating and Storage and Temperature Range
Tj, TSTG
-40 to +125
℃
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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T
Tr
ra
an
nDs
sioi
is
sdt
tIooeCrrsss
Product specification
FML10
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
Typ Max
Unit
Transistor TR1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cutoff current
V(BR)CBO IC = 10 μA, IE = 0
15
12
6
V
V
V(BR)CEO IC = 1 mA, IB = 0
V(BR)EBO IC = 10 μA, IC = 0
V
ICBO
IEBO
hFE
VCB=15V, IE=0
VEB=6V, IC=0
100
100
nA
nA
Emitter cutoff current
DC current gain
VCE=2V, IC= 200mA
270
680
collector-emitter saturation voltage *
Transition frequency
VCE(sat)
fT
0.2
V
IC = 500 mA; IB = 25 mA
400
MHz
pF
IC = 200 mA; VCE = 2 V; f = 100 MHz
VCB=10V, IE=0A, f=1MHz
Collector output capacitance
Di2
Cob
12
Forward voltage
Reverse current
VF
IR
490
200
mV
IF=700mA
VR=20V
μA
* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
■ Marking
Marking
L10
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
2 of 3
T
Tr
ra
an
nDs
sioi
is
sdt
tIooeCrrsss
Product specification
FML10
■ Typical Characteristics
Tr1
1000
10
1
1
0.1
IC/IB=20/1
Pulsed
Ta=25°C
Ta=100°C
V
CE=2V
Ta= −40°C
Ta=25°C
Ta=100°C
V
BE(sat)
Ta=25°C
Ta= −40°C
Ta=100°C
0.1
100
Ta=25°C
Ta= −40°C
I
C
/I
B=50/1
0.01
0.001
V
CE(sat)
IC/IB
=20/1
0.01
IC/IB=10/1
V
CE=2V
Pulsed
0.001
10
0.001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain
vs. collector current
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current
10
1
1000
1000
V
CE=2V
IC=20 IB1=-20IB2
Ta=25°C
f=100MHz
Pulsed
tstg
tr
100
tf
Ta=100°C
Ta=25°C
tdon
0.1
100
10
1
Ta= −40°C
0.01
V
CE=2V
Ta=25°C
Pulsed
10
−0.001
0.001
0
0.5
1.0
1.5
0.001
0.01
0.1
1
−0.01
−0.1
−1
(A)
−10
EMITTER CURRENT : I
E
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.5 Gain bandwidth product
vs. emitter current
Fig.6 Switching time
Fig.4 Grounded emitter propagation
characteristics
Di2
Di2
100
10
1
1000m
100m
10m
1m
IE=0A
f=1MHz
Cib
Ta=25°C
Ta=125°C
Cob
100m
10m
10
100µ
10µ
Ta=25°C
1m
1µ
Ta= −25°C
1
0.1
0.1m
0.1µ
1
10
100
0
0.1
0.2
0.3
0.4
0.5
(V)
0.6
0
10
20
30
40
50
60
70
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
FORWARD VOLTAGE : V
F
REVERSE VOLTAGE : VR (V)
Fig.8 Forward characteristics
Fig.9 Reverse characteristics
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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