FMMT459 [TYSEMI]

6V reverse blocking capability, IC=150mA continuous; 6V反向阻断能力, IC = 150毫安不断
FMMT459
型号: FMMT459
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

6V reverse blocking capability, IC=150mA continuous
6V反向阻断能力, IC = 150毫安不断

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中文:  中文翻译
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Product specification  
FMMT459  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
6V reverse blocking capability  
1
2
+0.1  
0.95  
-0.1  
Low saturation voltage - 90mV @ 50mA  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
1.9  
hFE  
50 @ 30 Ma  
IC=150mA continuous  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEV  
VCEO  
VEBO  
VECV  
ICM  
Rating  
500  
500  
450  
6
Unit  
V
V
V
V
V
A
Collector-emitter voltage  
Collector-emitter voltage  
Emitter-base voltage  
Emitter-collector voltage  
Peak pulse current  
6
0.5  
Continuous collector current * 1  
Base current  
IC  
0.15  
0.2  
IB  
A
625  
5
mW  
mW/  
mW  
mW/  
Power dissipation @ TA=25 * 1  
Linear derating factor  
PD  
PD  
806  
6.4  
Power dissipation @ TA=25 *2  
Linear derating factor  
Operating and storage temperature range  
?Junction to ambient *1  
Junction to ambient *2  
Tj:Tstg  
RèJA  
-55 to +150  
200  
155  
/W  
/W  
RèJA  
*1 For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in  
still air conditions  
*2 as above measured at t<5secs.  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  
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Product specification  
FMMT459  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
500  
500  
450  
6
Typ  
700  
700  
500  
8.1  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Collector-emitter breakdown voltage *  
Emitter-base breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter cut-off current  
Collector-base cut-off current  
Emitter-base cut-off current  
BVCBO IC=100ìA  
BVCEV  
V
IC=10ìA,0.3V VBE -1V  
BVCEO IC=10mA  
BVEBO IE=100ìA  
V
V
BVECV  
ICES  
6
8.1  
V
IC=1ìA,0.3V VBC -6V  
VCE=450V  
100  
100  
100  
nA  
nA  
nA  
ICBO  
VCB=450V  
IEBO  
VEB=5V  
IC=30mA,VCE=10V  
IC=50mA,VCE=10V *  
IC=20mA,IB=2mA  
IC=50mA,IB=6mA  
50  
120  
70  
Static forward current transfer ratio  
hFE  
60  
75  
90  
mV  
mV  
V
Collector-emitter saturation voltage  
*
VCE(sat)  
70  
Base-emitter saturation voltage  
Base-emitter turn on voltage *  
Transition frequency  
Output capacitance  
Turn-on time  
*
VBE(sat) IC=50mA,IB=5mA  
VBE(on) IC=50mA,VCE=10V  
0.76  
0.71  
0.9  
0.9  
V
50  
fT  
IC=10mA,VCE=20V,f=20MHz  
MHz  
pF  
ns  
Cobo  
ton  
toff  
VCB=20V, f=1MHz  
IC=50mA, VCC=100V  
IB1=5mA, IB2=10mA  
5
113  
Turn-off time  
3450  
ns  
* Measured under pulsed conditions. Pulse width = 300 ìs; duty cycle 2%  
Marking  
Marking  
459  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123  

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