FMMT459 [TYSEMI]
6V reverse blocking capability, IC=150mA continuous; 6V反向阻断能力， IC = 150毫安不断
| 型号： | FMMT459 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | 6V reverse blocking capability, IC=150mA continuous |
| 文件： | 总2页 (文件大小：668K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Product specification
FMMT459
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
6V reverse blocking capability
1
2
+0.1
0.95
-0.1
Low saturation voltage - 90mV @ 50mA
+0.05
0.1
-0.01
+0.1
-0.1
1.9
hFE
50 @ 30 Ma
IC=150mA continuous
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEV
VCEO
VEBO
VECV
ICM
Rating
500
500
450
6
Unit
V
V
V
V
V
A
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Emitter-collector voltage
Peak pulse current
6
0.5
Continuous collector current * 1
Base current
IC
0.15
0.2
IB
A
625
5
mW
mW/
mW
mW/
Power dissipation @ TA=25 * 1
Linear derating factor
PD
PD
806
6.4
Power dissipation @ TA=25 *2
Linear derating factor
Operating and storage temperature range
?Junction to ambient *1
Junction to ambient *2
Tj:Tstg
RèJA
-55 to +150
200
155
/W
/W
RèJA
*1 For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in
still air conditions
*2 as above measured at t<5secs.
http://www.twtysemi.com
1 of 2
sales@twtysemi.com
4008-318-123
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Product specification
FMMT459
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
500
500
450
6
Typ
700
700
500
8.1
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
BVCBO IC=100ìA
BVCEV
V
IC=10ìA,0.3V VBE -1V
BVCEO IC=10mA
BVEBO IE=100ìA
V
V
BVECV
ICES
6
8.1
V
IC=1ìA,0.3V VBC -6V
VCE=450V
100
100
100
nA
nA
nA
ICBO
VCB=450V
IEBO
VEB=5V
IC=30mA,VCE=10V
IC=50mA,VCE=10V *
IC=20mA,IB=2mA
IC=50mA,IB=6mA
50
120
70
Static forward current transfer ratio
hFE
60
75
90
mV
mV
V
Collector-emitter saturation voltage
*
VCE(sat)
70
Base-emitter saturation voltage
Base-emitter turn on voltage *
Transition frequency
Output capacitance
Turn-on time
*
VBE(sat) IC=50mA,IB=5mA
VBE(on) IC=50mA,VCE=10V
0.76
0.71
0.9
0.9
V
50
fT
IC=10mA,VCE=20V,f=20MHz
MHz
pF
ns
Cobo
ton
toff
VCB=20V, f=1MHz
IC=50mA, VCC=100V
IB1=5mA, IB2=10mA
5
113
Turn-off time
3450
ns
* Measured under pulsed conditions. Pulse width = 300 ìs; duty cycle 2%
Marking
Marking
459
http://www.twtysemi.com
2 of 2
sales@twtysemi.com
4008-318-123
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