KE3587-G [TYSEMI]
N-channel:VDS=20V ID=4A Drain-Source Voltage Vds 20V; N沟道： VDS = 20V ID = 4A漏源电压Vds为20V
| 型号： | KE3587-G |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | N-channel:VDS=20V ID=4A Drain-Source Voltage Vds 20V |
| 文件： | 总2页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
MOSFET
Product specification
(ME3587-G)
KE3587-G
(
)
SOT-23-6
Unit: mm
■ Features
●ꢀ
N-channel:VDS=20V ID=4A
●
●
●
●
＜
RDS(ON) 0.045Ω @VGS=4.5V
D2
S1
S2
D1
＜
RDS(ON) 0.068Ω @VGS=2.5V
＜
RDS(ON) 0.12Ω @VGS=1.8V
P-channel:VDS=-20V ID=-2A
0to0.1
●ꢀ
●ꢀ
●ꢀ
＜
RDS(ON) 0.11Ω @VGS=-4.5V
G1
G2
＜
RDS(ON) 0.13Ω @VGS=-2.5V
＜
RDS(ON) 0.17Ω @VGS=-1.8V
D1
D2
S2
G1
G2
S1
n-channel
p-channel
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
VDS
VGS
ID
Max N-Channel Max P-Channel
Unit
V
Drain-Source Voltage
Gate-Source Voltage
20
-20
±8
Drain-Current
-Continuous
-Pulsed
4
-2
A
IDM
+15
-10
1.15
110
Power Dissipation
PD
W
℃
Thermal Resistance,Junction- to-Ambient
RθJA
Tj.Tstg
/W
–55 to +150
℃
Operating Junction and Storage Temperature Range
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MOSFET
MOSFET
Product specification
(ME3587-G)
KE3587-G
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
ID=+250uA,VGS=0
ID=-250uA,VGS=0
Min
+20
-20
Typ
Max
Unit
V
N-Ch
P-Ch
Drain-to-Source Breakdown
Voltage
V(BR)DSS
VDS=20V,VGS=0V
N-Ch
1
Zero Gate Voltage Drain Current
Gate-Body Leakage
IDSS
IGSS
µA
nA
V
VDS=-20V,VGS=0V
VGS=±10V,VDS=0V
VGS=±10V,VDS=0V
VGS=VDS,ID=250uA
VGS=VDS,ID=-250uA
VGS=4.5V,ID=4A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
-1
±100
±100
1
0.5
0.75
Gate Threshold Voltage
(NOTE 1)
VGS(th)
-0.5
-0.75
-1
0.045
0.11
0.068
0.13
0.12
0.17
VGS=-4.5V,ID=-2.8A
VGS=2.5V,ID=3A
Drain- Source on-state Resistance
(NOTE 1)
RDS(ON)
Ω
VGS=-2.5V,ID=-2.4A
VGS=1.8V,ID=2A
VGS=-1.8V,ID=-1.7A
VDS=5V,ID=4A
5
4
Forward Transconductance
(NOTE 1)
gFS
Qg
S
VDS=-5V,ID=-2.3A
N-Ch
P-Ch
N-Ch
11.2
9
14
11
Total Gate Charge
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 4A
P-Channel
1.4
Gate-S ource Charge
Qgs
nC
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2.3
2.2
2.0
650
650
175
120
85
VDS = – 6V, VGS = – 4.5 V, ID = –2.8 A
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Qgd
Ciss
Coss
Crss
tD(on)
tr
700
680
N-Channel
VDS = 10 V, VGS = 0 V, f = 1MHz
P-Channel
PF
VDS = – 10V, VGS = 0 V, f = 1MHz
38
9
25
45
60
30
70
50
20
7
38
N-Channel
VDS = 10 V, RL = 10 Ω ,ID = 1 A
VGS = 4.5 V, RG = 6 Ω
P-Channel
VDS = - 6 V, RL = 3.6 Ω, ID = - 1 A
VGS = - 4.5 V, RG = 6 Ω
17
25
ns
46
Turn-Off Delay Time
Fall Time
tD(off)
tf
43
2.7
5
VGS=0V,IS=1A
VGS=0V,IS=-1A
0.8
-0.85
1.0
-1.0
Diode Forward Voltage
VSD
V
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4008-318-123
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