KRF7503 [TYSEMI]
Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET; 第五代技术Ulrtra低导通电阻双N沟道MOSFET型号: | KRF7503 |
厂家: | TY Semiconductor Co., Ltd |
描述: | Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET |
文件: | 总2页 (文件大小:143K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Product specification
KRF7503
Features
Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Continuous Drain Current, VGS @ 10V,Ta = 25
Continuous Drain Current, VGS @ 10V,TA = 70
Pulsed Drain Current*1
Symbol
ID
Rating
Unit
A
2.4
ID
1.9
IDM
PD
14
1.25
W
mW/
V
Power Dissipation Ta = 25 *1
Linear Derating Factor
10
Gate-to-Source Voltage
VGS
dv/dt
12
Peak Diode Recovery dv/dt*1
Junction and Storage Temperature Range
Junction-to-Ambient *2
5
V/ns
TJ, TSTG
-55 to + 150
100
R
JA
/W
* ISD
1.7A, di/dt
120A/ s, VDD
V(BR)DSS,TJ
10sec.
150
*2 Surface mounted on FR-4 board, t
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Product specification
KRF7503
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VGS = 0V, ID = 250
Min
30
Typ
Max
Unit
V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V(BR)DSS
A
0.059
V(BR)DSS/ TJ ID = 1mA,Reference to 25
V/
VGS = 10V, ID = 1.7A*1
RDS(on)
VGS = 4.5V, ID =0.85A*1
0.135
0.222
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
VGS(th)
gfs
1.0
1.9
V
S
VDS = VGS, ID = 250
A
Forward Transconductance
VDS = 10V, ID = 0.85A*1
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125
VGS = -20V
1.0
25
Drain-to-Source Leakage Current
IDSS
A
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
-100
100
12
IGSS
nA
VGS = 20V
Qg
Qgs
Qgd
td(on)
tr
ID = 1.7A
7.8
1.2
2.5
4.7
10
nC
ns
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
VDS = 24V
1.8
3.8
VGS = 10V,*1
VDD = 15V
ID = 1.7A
Turn-Off Delay Time
Fall Time
td(off)
tf
12
RG =6.0
5.3
210
80
RD = 8.7
Input Capacitance
Ciss
Coss
Crss
VGS = 0V
pF
A
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
f = 1.0MHz
32
IS
1.25
14
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD
trr
1.2
60
72
V
TJ = 25 , IS = 1.7A, VGS = 0V*1
TJ = 25 , IF = 1.7A.VR=10V
di/dt = 100A/ s*1
40
48
ns
nC
Qrr
*1 Pulse width
300µs; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
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