MBR0540 [TYSEMI]
Low forward voltage drop; 低正向压降
| 型号： | MBR0540 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low forward voltage drop |
| 文件： | 总1页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
MBR0540
SOD-123
Unit: mm
+0.1
+0.05
2.7-0.1
1.1-0.05
■ Features
● Low forward voltage drop
● Guard ring construction forTransient protection.
● High conductance.
+0.1
3.7-0.1
0.1max
0.50
0.35
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
40
Unit
V
Peak repetitive peak reverse voltage
Working peak
DC blocking voltage
VRRM
VRWM
VR
RMS reverse voltage
VR(RMS)
IO
28
500
V
mA
A
Average rectified output current
Peak forward surge current
Power dissipation
IFSM
Pd
5.5
410
mW
V/μs
℃/W
℃
Voltage rate of change
dv/dt
RθJA
Tstg
1000
304
Thermal resistance junction to ambient
Storage temperature
-65 to +125
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
Min
40
Typ
Max
Unit
Reverse Breakdown Voltage
V(BR)R
V
IR=20μA
IF=0.5A
IF=1A
VR=20V
VR=40V
0.51
0.62
10
Forward voltage
VF
V
IR1
IR2
μA
μA
pF
Reverse current
20
Capacitance between terminals
CT
VR=0V,f=1MHz
170
■ Marking
Marking
B4U
http://www.twtysemi.com
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sales@twtysemi.com
4008-318-123
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