MMSTA42 [TYSEMI]
High breakdown voltage; 高的击穿电压
| 型号： | MMSTA42 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | High breakdown voltage |
| 文件： | 总1页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
Product specification
MMSTA42
Unit:mm
SOT-323
1.3±0.1
0.65
■ Features
1
2
● High breakdown voltage
● Low collector-emitter saturation voltage
3
● Complementary to MMSTA92
+0.05
0.1
0.3±0.1
2.1±0.1
-0.02
1 Emitter
2 Base
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
300
Unit
V
300
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
300
mA
mW
℃
PC
200
Tj
150
Storage Temperature
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Symbol
Test conditions
Min
Typ Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
IcBO
300
300
5
V
V
Ic= 100 μA， IE=0
Ic= 1 mA， IB=0
V
IE= 100 μA， IC=0
VCB= 200 V , IE=0
VEB= 5V , IC=0
0.25
0.1
μA
μA
Emitter cutoff current
IEBO
VCE= 10V, IC= 1mA
VCE= 10V, IC= 10mA
VCE= 10V, IC= 30mA
60
100
75
DC current gain
hFE
200
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output Capacitance
VCE(sat) IC=20 mA, IB= 2mA
VBE(sat) IC= 20 mA, IB= 2mA
0.5
0.9
3.0
V
V
Cob
fT
VCB = 20V, f = 1.0MHz, IE = 0
VCE= 20V, IC= 10mA,f=30MHz
pF
Transition frequency
50
MHz
■ Marking
Marking
K3M
http://www.twtysemi.com
1of 1
sales@twtysemi.com
4008-318-123
相关型号：
MMSTA42-13
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
MMSTA42-TP-HF
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-3
MCC
MMSTA55-13
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
©2020 ICPDF网 联系我们和版权申明