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NTR4503NT3G [TYSEMI]

Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available; 功率MOSFET的30 V ， 2.5 A单N沟道， SOT- 23无铅封装是可用
NTR4503NT3G
型号： NTR4503NT3G
厂家： TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述：

Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available
功率MOSFET的30 V ， 2.5 A单N沟道， SOT- 23无铅封装是可用
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Product specification  
NTR4503N  
Power MOSFET  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
30 V, 2.5 A, Single N−Channel, SOT−23  
85 mW @ 10 V  
30 V  
2.5 A  
Features  
105 mW @ 4.5 V  
• Leading Planar Technology for Low Gate Charge / Fast Switching  
• 4.5 V Rated for Low Voltage Gate Drive  
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)  
• Pb−Free Package is Available  
N−Channel  
D
Applications  
• DC−DC Conversion  
• Load/Power Switch for Portables  
• Load/Power Switch for Computing  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
S
Parameter  
Drain−to−Source Voltage  
Symbol Value  
Unit  
V
V
DSS  
30  
±20  
2.0  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Gate−to−Source Voltage  
V
GS  
V
3
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
I
D
A
A
3
State  
Drain  
T = 85°C  
A
1.5  
1
t ≤ 10 s T = 25°C  
2.5  
A
2
TR3  
Power Dissipation  
(Note 1)  
Steady T = 25°C  
State  
P
0.73  
W
A
A
D
SOT−23  
CASE 318  
STYLE 21  
Continuous Drain  
Current (Note 2)  
Steady T = 25°C  
I
D
1.5  
1.1  
A
1
Gate  
2
State  
Source  
T = 85°C  
A
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
D
0.42  
W
TR3 = Specific Device Code  
= Date Code  
M
Pulsed Drain Current  
t = 10 ms  
I
6.0  
A
V
p
DM  
ORDERING INFORMATION  
ESD Capability (Note 3)  
C = 100 pF,  
ESD  
125  
RS = 1500 W  
†
Device  
Package  
Shipping  
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
NTR4503NT1  
SOT−23  
3000/Tape & Reel  
T
stg  
Source Current (Body Diode)  
I
2.0  
A
S
SOT−23  
(Pb−Free)  
NTR4503NT1G  
3000/Tape & Reel  
10000/Tape & Reel  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
SOT−23  
(Pb−Free)  
NTR4503NT3G  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
170  
100  
300  
Unit  
Junction−to−Ambient − Steady State (Note 1)  
Junction−to−Ambient − t < 10 s (Note 1)  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
q
q
JA  
JA  
JA  
R
R
1. Surface−mounted on FR4 board using 1 in sq pad size.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
3. ESD Rating Information: HBM Class 0.  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
 
Product specification  
NTR4503N  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
Drain−to−Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
V
V
= 0 V, I = 250 mA  
30  
36  
V
(BR)DSS  
GS  
D
I
V
= 0 V, V = 24 V  
1.0  
10  
mA  
DSS  
GS  
DS  
V
GS  
= 0 V, V = 24 V, T = 125°C  
DS J  
Gate−to−Source Leakage Current  
TY CHARACTERISTICS (Note 4)  
Gate Threshold Voltage  
I
V
= 0 V, V = "20 V  
"100  
nA  
GSS  
DS  
GS  
V
V
= V , I = 250 mA  
1.0  
1.75  
85  
3.0  
110  
140  
V
GS(TH)  
GS  
DS  
D
Drain−to−Source On−Resistance  
R
V
= 10 V, I = 2.5 A  
mW  
DS(on)  
GS  
GS  
DS  
D
V
V
= 4.5 V, I = 2.0 A  
105  
5.3  
D
Forward Transconductance  
CHARGES AND CAPACITANCES  
Input Capacitance  
g
= 4.5 V, I = 2.5 A  
S
FS  
D
C
135  
52  
pF  
iss  
V
= 0 V, f = 1.0 MHz,  
GS  
Output Capacitance  
C
oss  
V
DS  
= 15 V  
Reverse Transfer Capacitance  
Input Capacitance  
C
15  
rss  
C
130  
42  
250  
75  
pF  
nC  
iss  
V
= 0 V, f = 1.0 MHz,  
= 24 V  
GS  
Output Capacitance  
C
oss  
V
DS  
Reverse Transfer Capacitance  
Total Gate Charge  
C
13  
25  
rss  
Q
Q
3.6  
0.3  
0.6  
0.7  
1.9  
0.3  
0.6  
0.9  
7.0  
G(TOT)  
Threshold Gate Charge  
Gate−to−Source Charge  
Gate−to−Drain Charge  
Total Gate Charge  
Q
G(TH)  
V
GS  
= 10 V, V = 15 V,  
DS  
I
D
= 2.5 A  
Q
GS  
GD  
Q
nC  
G(TOT)  
Threshold Gate Charge  
Gate−to−Source Charge  
Gate−to−Drain Charge  
Q
G(TH)  
V
GS  
= 4.5 V, V = 24 V,  
DS  
I
D
= 2.5 A  
Q
GS  
GD  
Q
SWITCHING CHARACTERISTICS (Note 5)  
Turn−On Delay Time  
Rise Time  
t
5.8  
5.8  
14  
12  
10  
25  
5.0  
ns  
ns  
d(on)  
t
r
V
V
= 10 V, V = 15 V,  
DD  
GS  
I
= 1 A, R = 6 W  
D
G
Turn−Off Delay Time  
Fall Time  
t
t
t
d(off)  
t
f
1.6  
4.8  
6.7  
13.6  
1.8  
Turn−On Delay Time  
Rise Time  
d(on)  
t
r
= 10 V, V = 24 V,  
GS  
D
DD  
I
= 2.5 A, R = 2.5 W  
G
Turn−Off Delay Time  
Fall Time  
d(off)  
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS  
Forward Diode Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
V
V
= 0 V, I = 2.0 A  
0.85  
9.2  
1.2  
V
SD  
RR  
GS  
S
t
ns  
nC  
V
GS  
= 0 V, I = 2.0 A,  
S
dI /dt = 100 A/ms  
S
Q
4.0  
RR  
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.  
5. Switching characteristics are independent of operating junction temperatures.  
http://www.twtysemi.com  
sales@twtysemi.com  
2 of 2  
 

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