CHA3512 [UMS]

6-18GHz Low Noise Digital Variable Amplifier; 6-18GHz低噪声数字可变增益放大器
CHA3512
型号: CHA3512
厂家: UNITED MONOLITHIC SEMICONDUCTORS    UNITED MONOLITHIC SEMICONDUCTORS
描述:

6-18GHz Low Noise Digital Variable Amplifier
6-18GHz低噪声数字可变增益放大器

放大器
文件: 总10页 (文件大小:518K)
中文:  中文翻译
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CHA3512  
RoHS COMPLIANT  
6-18GHz Low Noise Digital Variable Amplifier  
GaAs Monolithic Microwave IC  
Description  
The CHA3512 is composed by a Single Pole  
Double Through (SPDT) switch followed by a  
one step digital attenuator and a double  
stage travelling wave amplifier. It is designed  
for defense applications. The backside of the  
chip is both RF and DC grounded. This helps  
to simplify the assembly process.  
The circuit is manufactured with a PM-HEMT  
process, 0.25µm gate length, via holes  
through the substrate, air bridges and  
electron beam gate lithography.  
Typical on wafer Measurements  
Gain versus attenuation states  
It is available in chip form.  
Main Features  
Performances : 6-18GHz  
23 dBm saturated output power  
16 dB gain  
1 bit attenuator for 20dB dynamic range  
DC power consumption : 210mA @ 4.5V  
Chip size : 4.27 x 2.46 x 0.1 mm  
Main Characteristics  
Tamb. = 25°C  
Symbol  
Fop  
Parameter  
Operating frequency range  
Min  
Typ  
Max  
Unit  
GHz  
dB  
6
18  
G
Small signal gain @ Attenuator state 0dB  
Saturated Output power @ Attenuator state 0dB  
Attenuator range  
16  
23  
20  
Psat  
dBm  
dB  
ATT dyn  
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !  
Ref. DSCHA35126278 - 05 Oct 06  
1/10  
Specifications subject to change without notice  
United Monolithic Semiconductors S.A.S.  
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France  
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
6-18GHz Digital Variable Amplifier  
CHA3512  
Electrical Characteristics on wafer  
Tamb = +25°C  
Vd= Pads B, C = 4.5V, Vg = Pads A, C tuned for Id = 210mA  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
Fop  
Operating frequency range (1)  
6
18  
GHz  
G
Small signal gain @ Attenuator state 0dB (1)  
16  
20  
dB  
dB  
dB  
ATT dyn Attenuator range  
Is  
Small signal gain @ Attenuator state 0dB &  
-35  
switch OFF (1)  
P1dB  
Psat  
NF  
Output power at 1dB compression @ Attenuator  
state 0dB (1)  
20  
23  
dBm  
dBm  
dB  
Saturated Output power @ Attenuator state 0dB  
(1)  
Noise figure @ Attenuator state 0dB  
7
VSWRin Input VSWR all attenuator states  
2.0:1  
2.0:1  
4.5  
VSWRout Output VSWR all attenuator states & switch ON  
Vd  
Id  
V
mA  
V
Drain bias DC voltage (Pads B,D)  
Bias current @ small signal  
210  
250  
0
Vc  
Control voltage for Attenuator bit & SPDT switch  
-5  
(1) These values are representative for on-wafer measurements that are made without bonding  
wires at the RF ports.  
Ref. : DSCHA35126278 - 05 Oct 06  
2/10  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
6-18GHz Digital Variable Amplifier  
CHA3512  
Absolute Maximum Ratings  
Tamb. = 25°C (1)  
Symbol  
Vd  
Parameter  
Maximum Drain bias voltage ( Pads B, D)  
Drain bias current with Vd=4.5V  
Gate bias voltage (Pads A,C)  
Values  
+5  
Unit  
V
Id  
300  
mA  
Vg  
-2 to +0.4  
-7 to +0.6  
+20.0  
V
V
Vc  
Attenuator bit & SPDT control voltage  
Maximum input power overdrive (2)  
Maximum channel temperature  
Operating temperature range  
Pin  
dBm  
°C  
Tch  
Ta  
+175  
-40 to +70  
-55 to +125  
°C  
Tstg  
Storage temperature range  
°C  
(1) Operation of this device above anyone of these parameters may cause permanent damage.  
(2) Duration < 1s.  
Thermal Resistance channel to ground paddle =123°C/W for Tamb. = +70°C.  
LNA Control interface  
The attenuator state is controlled by 2 voltages.  
The SPDT switch is controlled by 2 voltages.  
Voltage CONTROL  
PAD  
Switch control  
Theoretical  
attenuation  
state  
20A  
(V)  
20B  
(V)  
E
(V)  
F
(V)  
(dB)  
0
1
2
0 référence  
20  
-5  
0
0
-5  
0
-5  
-5  
0
0
0
Isolation  
-5  
-5  
Ref. : DSCHA35126278 - 05 Oct 06  
3/10  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
6-18GHz Digital Variable Amplifier  
CHA3512  
Typical on wafer Measurements @ 25°C  
Bias conditions: Vd=4.5V, Vg tuned for Id = 210mA  
Linear Gain versus attenuator states  
0dB state  
20dB state  
Linear Gain with SPDT switch OFF  
Ref. : DSCHA35126278 - 05 Oct 06  
4/10  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
6-18GHz Digital Variable Amplifier  
CHA3512  
Saturated output power @ nominal state  
dB(S11) versus frequency for all states  
Attenuator accuracy versus frequency  
Switch OFF  
dB(S22) versus frequency for all states  
Ref. : DSCHA35126278 - 05 Oct 06  
5/10  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
6-18GHz Digital Variable Amplifier  
CHA3512  
Typical test fixture Measurements @ 25°C  
Bias conditions: Vd=4.5V, Vg tuned for Id = 210mA  
Linear Gain versus attenuation states  
Switch OFF  
Input Return Loss versus attenuation states  
Switch OFF  
Ref. : DSCHA35126278 - 05 Oct 06  
6/10  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
6-18GHz Digital Variable Amplifier  
CHA3512  
Output Return Loss versus attenuation states  
Ref. : DSCHA35126278 - 05 Oct 06  
7/10  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
6-18GHz Digital Variable Amplifier  
CHA3512  
Typical Chip on wafer Sij parameters for reference state  
Tamb = +25°C, Vd1 = +4.5 V, Id = 210 mA , 0dB state (20A = -5V, 20B = 0V).  
Freq (GHz) dB(S11) P(S11) (°) dB(S21) P(S21) (°) dB(S12) P(S12) (°) dB(S22) P(S22) (°)  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
-5.5  
-8.0  
-92.5  
-124.4  
-149.5  
-167.5  
170.0  
167.5  
-112.8  
-106.6  
-121.1  
-137.3  
-152.0  
-161.4  
-156.8  
-123.6  
-107.8  
-107.5  
-118.9  
-131.3  
-147.0  
-161.0  
-174.3  
172.0  
157.6  
142.7  
125.9  
112.4  
104.1  
107.6  
120.0  
113.6  
92.0  
63.4  
31.3  
2.8  
-20.5  
-39.8  
-57.4  
-75.6  
-93.4  
-110.5  
-127.9  
-144.2  
-159.1  
-175.4  
167.6  
150.2  
130.5  
-20.7  
-2.7  
0.3  
161.9  
69.1  
94.1  
50.3  
-2.9  
-54.8  
-91.9  
-127.4  
-161.5  
165.7  
133.9  
103.0  
72.7  
-62.1  
-66.5  
-68.7  
-64.9  
-83.1  
-87.8  
-73.1  
-67.2  
-63.8  
-61.5  
-60.0  
-57.6  
-56.5  
-55.2  
-54.0  
-53.6  
-53.7  
-52.6  
-51.6  
-53.2  
-53.3  
-53.7  
-55.4  
-59.3  
-59.3  
-62.4  
-59.0  
-54.6  
-51.5  
-48.0  
-45.8  
-43.8  
-43.3  
-42.6  
-42.4  
-43.0  
-45.7  
-50.7  
-60.5  
-57.9  
-50.5  
-47.7  
-44.3  
-45.6  
-47.3  
-49.2  
-52.6  
112.2  
-40.1  
91.4  
14.8  
140.3  
39.6  
116.8  
82.5  
57.4  
22.6  
-7.1  
-33.7  
-63.6  
-89.9  
-115.4  
-142.5  
-160.6  
-177.3  
153.2  
131.7  
114.2  
99.0  
-0.5  
-1.2  
-1.5  
-1.9  
-2.8  
-4.7  
-6.1  
-8.0  
-57.6  
-85.9  
-11.1  
-13.9  
-17.9  
-25.6  
-28.0  
-20.8  
-17.8  
-16.9  
-17.4  
-19.4  
-22.7  
-23.3  
-19.3  
-15.6  
-13.3  
-11.7  
-10.5  
-10.2  
-10.0  
-10.1  
-10.4  
-11.1  
-12.4  
-14.7  
-17.6  
-20.9  
-20.5  
-18.4  
-16.8  
-15.7  
-14.9  
-14.5  
-13.8  
-12.8  
-11.5  
-10.3  
-9.3  
-107.3  
-132.8  
-157.7  
-175.7  
167.0  
152.1  
140.7  
132.5  
127.7  
127.0  
129.8  
136.0  
140.3  
137.2  
132.1  
127.6  
126.2  
125.0  
130.5  
142.9  
148.2  
140.1  
109.0  
37.3  
-36.7  
-71.4  
-93.5  
-99.5  
-79.2  
-60.8  
-66.5  
-84.5  
-106.7  
-131.5  
-154.4  
-174.8  
167.0  
151.2  
138.3  
150.9  
-171.3  
157.4  
134.3  
117.4  
103.7  
10.0  
13.8  
15.6  
16.3  
17.1  
17.6  
18.0  
18.2  
18.3  
18.3  
18.2  
18.0  
17.8  
17.5  
17.3  
17.1  
16.9  
16.9  
16.9  
17.0  
17.0  
17.0  
16.8  
16.7  
16.6  
16.6  
16.4  
16.1  
15.5  
14.7  
14.0  
12.9  
11.3  
8.9  
-10.0  
-12.2  
-14.5  
-16.7  
-18.7  
-19.7  
-20.2  
-21.1  
-21.5  
-22.9  
-24.4  
-26.5  
-28.6  
-29.8  
-29.7  
-30.1  
-32.0  
-34.9  
-29.6  
-25.4  
-24.5  
-25.2  
-25.9  
-21.5  
-15.9  
-12.2  
-9.6  
43.1  
14.2  
-13.9  
-41.2  
-68.0  
-94.5  
-120.6  
-146.6  
-173.0  
159.8  
131.8  
102.9  
74.2  
9.5  
10.0  
10.5  
11.0  
11.5  
12.0  
12.5  
13.0  
13.5  
14.0  
14.5  
15.0  
15.5  
16.0  
16.5  
17.0  
17.5  
18.0  
18.5  
19.0  
19.5  
20.0  
20.5  
21.0  
21.5  
22.0  
22.5  
23.0  
23.5  
24.0  
76.4  
61.7  
48.4  
-22.1  
-113.2  
-169.8  
171.1  
149.4  
126.8  
100.8  
75.6  
52.2  
25.5  
-5.1  
-39.8  
-77.9  
-154.2  
108.5  
78.2  
45.8  
16.4  
-14.5  
-46.8  
-80.4  
-114.6  
-148.5  
175.9  
138.1  
98.1  
59.2  
23.7  
-8.9  
-40.4  
-74.3  
-118.3  
176.5  
108.2  
57.0  
-8.4  
-8.3  
-8.9  
6.0  
3.2  
0.8  
-0.9  
-1.8  
-3.7  
-8.9  
-13.6  
-16.4  
-18.1  
-10.2  
-12.1  
-15.0  
-21.2  
-15.1  
-12.2  
-12.7  
-13.9  
-15.2  
-8.7  
-8.4  
-8.4  
-8.6  
-8.9  
-9.5  
-10.4  
-11.6  
52.1  
19.4  
-14.4  
-35.8  
-46.6  
-62.7  
15.7  
-17.7  
Ref. : DSCHA35126278 - 05 Oct 06  
8/10  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
6-18GHz Digital Variable Amplifier  
CHA3512  
Chip Assembly and Mechanical Data  
To Vd DC Drain Supply  
RF IN1  
RF OUT  
RF IN2  
Note : RF wire bondings should be as short as possible, lower than 0.35mm.  
25µm diameter gold wire is to be prefered.  
Recommended circuit bonding table  
Label  
20A, 20B  
Type  
Vc  
Decoupling  
Not required  
120pF / 10nF  
120pF / 10nF  
Not required  
Not required  
Not required  
Comment  
20dB attenuator control  
B
D
A
C
E, F  
Vd  
Vd  
Vg  
Vg  
Drain Supply  
Drain Supply  
Gate Supply  
Gate Supply  
Switch control  
Vc  
Ref. : DSCHA35126278 - 05 Oct 06  
9/10  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
6-18GHz Digital Variable Amplifier  
CHA3512  
Bonding pad positions  
Chip thickness : 100µm  
Ordering Information  
Chip form  
:
CHA3512-99F/00  
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors  
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of  
patents or other rights of third parties which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all  
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use  
as critical components in life support devices or systems without express written approval from United Monolithic  
Semiconductors S.A.S.  
Ref. : DSCHA35126278 - 05 Oct 06  
10/10  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  

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