CHA3656-QAG [UMS]
5.8-17GHz Low Noise Amplifier;
| 型号： | CHA3656-QAG |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 5.8-17GHz Low Noise Amplifier |
| 文件： | 总14页 (文件大小：578K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHA3656-QAG
5.8-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3656-QAG is a two-stage self-
biased wide band monolithic low noise
amplifier.
UMS
A3656
It is designed for
a
wide range of
applications, from military to commercial
communication systems.
YYWW
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
Gain & Noise figure (dB)
Main Features
28
26
24
22
20
18
16
14
12
10
8
■ Broadband performances: 5.8- 17GHz
■ 1.7dB noise figure
■ 24dBm 3rd order intercept point
■ 14dBm power at 1dB compression
■ 20dB gain
Gain
NF
■ Low DC power consumption
■ 16L-QFN3X3 SMD package
6
4
2
0
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Freq
Parameter
Min
5.8
18
Typ
Max
Unit
GHz
dB
Frequency range
Linear Gain
17.0
Gain
NF
20.0
1.7
Noise Figure
2
dB
P1dB
Output Power @1dB comp.
13.0
14.0
dBm
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3656-QAG
5.8-17GHz Low Noise Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +3.0V, P1, N2 = GND (1)
Symbol
Freq
Parameter
Min
5.8
18
Typ
Max
Unit
GHz
dB
Frequency range
Linear Gain
17.0
Gain
NF
20.0
1.7
Noise Figure
2
dB
RL in
RL out
IP3
Input return loss
7
9
8
Output return loss
10
24
14
3
3rd order intercept point (Pin DCL = -20 dBm)
Output power at 1dB gain comp
Drain bias voltage
dBm
dBm
V
P1dB
D1, D2
Id
13
4
Drain bias current
68
90
mA
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
(1) Pin F1 & P2 are not connected
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd
Parameter
Values
4.5V
Unit
V
Drain bias voltage
RF input power
Pin
10
dBm
°C
Tj
Junction temperature (2)
175
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
°C
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
D1
Pad No
16
Parameter
DC Drain voltage 2nd stage
DC Drain voltage 1st stage
DC Gate voltage
Values
Unit
V
3
D2
14
3
V
P1, N2
F1, P2
5, 8
6, 7
GND
DC Gate voltage
Not connected
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
2/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8-17GHz Low Noise Amplifier
CHA3656-QAG
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below the maximum value specified in the next table. So, the system PCB must be
designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to
guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION : CHA3656-QAG
Recommended max. junction temperature (Tj max)
Junction temperature absolute maximum rating
Max. continuous dissipated power (Pdiss. Max.)
:
:
:
115 °C
175 °C
0,2 W
=> Pdiss. Max. derating above Tcase(1)= 85
Junction-Case thermal resistance (Rth J-C)(2)
Minimum Tcase operating temperature(3)
°C
:
:
:
7 mW/°C
<147 °C/W
-40 °C
Maximum Tcase operating temperature(3)
Minimum storage temperature
:
:
:
85 °C
-55 °C
150 °C
Maximum storage temperature
(1) Derating at junction temperature constant = Tj max.
(2) Rth J-C is calculated for a worst case considering the hottest junction of the MMIC and all the devices biased.
(3) Tcase=Package back side temperature measured under the die-attach-pad (see the drawing below).
0,25
0,2
Tcase
0,15
0,1
0,05
Example: QFN 16L 3x3
Location of temperature
reference point(Tcase)
on package's bottom side
Pdiss. Max. @Tj <Tj max (W)
0
-50
-25
0
25
50
75
100
125
Tcase (°C)
6,4
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
3/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3656-QAG
5.8-17GHz Low Noise Amplifier
Typical Package Sij parameters
Temp = +25°C, Vd1=Vd2= +3V, typical Id=68mA P1 , N2 = GND
Freq
(GHz)
2.0
3.0
4.0
5.0
6.0
7.0
8.0
S11
(dB)
PhS11
(°)
S21
(dB)
-28.42
1.67
PhS21
(°)
-15.8
-102.6
139.3
33.8
-44.4
-107.9
-163.3
145.1
98.1
S12
(dB)
PhS12
(°)
S22
(dB)
PhS22
(°)
-0.34
-1.10
-5.41
-9.50
-8.96
-8.15
-7.79
-7.65
-8.40
-9.73
-11.45
-12.57
-13.31
-12.31
-9.92
-7.86
-6.76
-7.81
-9.90
-10.68
-9.37
-7.54
-5.98
-5.00
-4.48
-4.57
-6.02
-10.14
-6.28
-5.52
-5.71
-6.71
-12.87
-8.31
-5.11
-7.25
-5.48
-6.02
-6.43
-83.2
-141.5
117.5
-29.6
-91.0
-123.8
-153.6
175.0
142.7
110.8
78.9
-72.11
-65.37
-55.13
-44.56
-40.55
-38.41
-37.55
-36.87
-36.09
-35.53
-35.31
-35.28
-35.42
-36.12
-38.53
-43.59
-48.33
-40.68
-38.83
-37.64
-39.46
-42.41
-43.57
-41.11
-40.00
-36.45
-32.52
-30.56
-33.31
-35.30
-34.60
-29.95
-28.76
-35.96
-38.00
-38.04
-30.98
-33.34
-35.78
176.9
111.5
-159.3
123.6
68.1
-0.49
-3.57
-7.37
-8.94
-10.28
-11.23
-12.88
-15.39
-17.45
-18.48
-18.95
-20.78
-18.76
-18.03
-19.36
-25.75
-13.10
-8.06
-6.55
-5.33
-4.59
-4.63
-4.38
-4.12
-4.23
-4.58
-5.05
-4.94
-5.45
-6.25
-6.30
-5.33
-5.25
-5.28
-5.40
-5.30
-4.37
-3.62
-2.91
-80.8
-127.6
-141.7
-159.4
-179.7
151.6
112.9
67.6
15.84
20.10
21.15
21.35
21.48
21.27
20.93
20.64
20.52
20.44
20.36
20.65
20.76
20.31
18.75
15.93
12.65
9.55
20.1
-22.4
-57.8
-93.6
-130.8
-168.0
158.3
118.2
81.2
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
19.0
54.2
11.7
-25.3
-58.1
-73.1
-81.3
-98.3
-166.6
-105.7
-107.4
-144.6
2.4
-24.4
-50.6
-74.5
-94.4
-117.2
-140.4
-164.0
173.8
148.9
117.7
88.5
46.2
8.3
-31.3
-72.7
-115.4
148.1
93.5
-31.4
-123.1
-171.8
133.6
74.4
-166.9
125.5
63.4
-10.4
-46.7
6.2
37.2
-16.0
-60.6
-101.3
-138.7
-169.4
156.4
126.5
96.7
-7.4
-47.3
-90.5
-128.6
-165.0
158.7
111.1
52.8
6.39
3.76
1.63
17.3
-21.0
-54.6
-86.2
-118.6
-152.7
-156.2
-170.9
155.7
120.6
75.3
-0.50
-1.76
-2.01
-0.94
-1.77
-10.00
-18.14
-23.23
-22.53
-21.95
-27.40
-34.16
-40.00
-27.67
-28.55
-30.94
63.3
17.2
-3.5
-46.6
-107.8
-160.3
-174.5
165.3
130.6
46.8
-32.7
-63.9
72.4
-61.9
-126.8
-161.2
-171.6
158.7
73.3
-31.7
-84.5
55.5
58.2
23.1
-17.2
149.2
75.1
-17.5
-52.8
-84.6
-109.7
-136.1
-162.5
173.2
28.9
-17.3
-79.5
-133.6
-102.0
-154.0
163.3
-111.3
-173.6
133.5
Refer to the “definition of the Sij reference planes” section below.
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
4/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8-17GHz Low Noise Amplifier
CHA3656-QAG
Typical Board Measurements
Tamb.= +25°C, Vd = +3.0V, Id = 68mA, P1 = N2 = GND
Measurement in the package access planes
Linear Gain & Return loss versus frequency
28
24
20
16
12
8
S21
S11
S22
4
0
-4
-8
-12
-16
-20
-24
-28
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency(GHz)
Noise figure versus frequency & Vd
3
2.75
2.5
2.25
2
NF 2.5 V
NF 3 V
NF 3.5 V
NF 4 V
1.75
1.5
1.25
1
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency(GHz)
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
5/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3656-QAG
5.8-17GHz Low Noise Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +3.0V, Id = 68mA, P1 = N2 = GND
Measurement in the package access planes
Output power at 1dB compression versus frequency & Vd
20
18
16
14
12
10
8
6
2.5 V
3 V
3.5 V
4 V
4
2
0
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency(GHz)
Drain current versus Vd
0.09
0.085
0.08
0.075
0.07
0.065
0.06
0.055
0.05
2.5
3
3.5
4
Drain voltage (V)
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
6/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8-17GHz Low Noise Amplifier
CHA3656-QAG
Typical Board Measurements
Tamb.= +25°C, Vd = +3.0V, Id = 68mA, P1 = N2 = GND
Measurement in the package access planes
Output IP3 versus frequency & Vd
Pin (DCL) = -20dBm
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
Vd= 2.5V
9
Vd= 3V
11
Vd= 3.5V
Vd= 4V
15
14
6
7
8
10
12
13
14
15
16
17
18
Frequency(GHz)
Output IP3 versus Pin & frequency
Vd = 3V
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
6GHz
14GHz
8GHz
10GHz
17GHz
12GHz
-12
16GHz
-22
-20
-18
-16
-14
-10
InputpowerDCL (dBm)
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
7/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3656-QAG
5.8-17GHz Low Noise Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +3.0V, Id = 68mA, P1 = N2 = GND
Measurement in the package access planes
Linear gain versus frequency & temperature
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
-40°C
+25°C
+85°C
8
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency(GHz)
Noise figure versus frequency & temperature
5
4.5
+25°C
+85°C
-40°C
4
3.5
3
2.5
2
1.5
1
0.5
0
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency(GHz)
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
8/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8-17GHz Low Noise Amplifier
CHA3656-QAG
Typical Board Measurements
Tamb.= +25°C, Vd = +3.0V, Id = 68mA, P1 = N2 = GND
Measurement in the package access planes
Output IP3 versus Pin, temperature & Vd
Frequency = 16GHz
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
-40°C at 3V
-40°C at 4V
25°C at 3V
25°C at 4V
+85°C at 3V
+85°C at 4V
-22
-20
-18
-16
-14
-12
InputpowerDCL (dBm)
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
9/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3656-QAG
5.8-17GHz Low Noise Amplifier
Package outline (1)
Matt tin, Lead Free
Units :
(Green)
1- Nc
7- P2
13- Nc
mm
2- Gnd(2)
3- RF IN
4- Gnd(2)
5- P1
8- N2
14- D2
15- Gnd(2)
16- D1
From the standard :
JEDEC MO-220
(VGGD)
9- Gnd(2)
10- RF OUT
11- Gnd(2)
12- Nc
17- GND
6- F1
(1) The package outline drawing included to this data-sheet is given for indication. Refer to the
application note AN0017 (http://www.ums-gaas.com) for exact package dimensions.
(2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board.
Ensure that the PCB board is designed to provide the best possible ground to the package.
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
10/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8-17GHz Low Noise Amplifier
CHA3656-QAG
Definition of the Sij reference planes
The reference planes used for Sij
measurements given above are symmetrical
from the symmetrical axis of the package
(see drawing beside). The input and output
reference planes are located at 2.65mm
offset (input wise and output wise
respectively) from this axis. Then, the given
Sij parameters incorporate the land pattern of
the evaluation motherboard recommended in
paragraph "Evaluation mother board".
2.65
2.65
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
11/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3656-QAG
5.8-17GHz Low Noise Amplifier
Evaluation mother board
■ Compatible with the proposed footprint.
■ Based on typically Ro4003 / 8mils or equivalent.
■ Using a micro-strip to coplanar transition to access the package.
■ Recommended for the implementation of this product on a module board.
■ Decoupling capacitors of 10nF ±10% are recommended for all DC accesses.
■ See application note AN0017 for details.
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
12/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8-17GHz Low Noise Amplifier
CHA3656-QAG
DC Schematic
LNA: 3V, 68mA
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
13/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3656-QAG
5.8-17GHz Low Noise Amplifier
Recommended package footprint
Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot
print recommendations.
SMD mounting procedure
For the mounting process standard techniques involving solder paste and a suitable reflow
process can be used. For further details, see application note AN0017.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS package products.
Ordering Information
QFN 3x3 package:
CHA3656-QAG/XY
Stick: XY = 20
Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
14/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
相关型号：
CHA3666-99F/00
Wide Band Low Power Amplifier, 6000MHz Min, 17000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, DIE-10
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