CHA3665-QAG_15 [UMS]
5-21GHz Driver Amplifier;
| 型号： | CHA3665-QAG_15 |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 5-21GHz Driver Amplifier |
| 文件： | 总12页 (文件大小：580K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHA3665-QAG
RoHS COMPLIANT
5-21GHz Driver Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3665-QAG is a two-stage general
purpose monolithic medium power amplifier.
UMS
A3665
YYWW
It is designed for
a
wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a power
pHEMT process, 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
Main Features
■ Broadband performances: 5-21GHz
■ 20.5dBm saturated output power
■ 15dB gain
■ DC bias: Vd=5Volt @ Id=120mA
■ 16L-QFN3x3
■ MSL1
Main Characteristics
Tamb.= +25°C, Vd = +5.0V
Symbol
Freq
Parameter
Min
5
Typ
Max
Unit
GHz
dB
Frequency range
Linear Gain
21
Gain
12.5
17.5
19
15
Pout-1dB Output Power @1dB gain compression
19.5
20.5
120
dBm
dBm
mA
Psat
Id
Saturated Output Power
Drain current
Ref. : DSCHA3665-QAG2258 - 14 Sep 12
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3665-QAG
5-21GHz Driver Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +5.0V
Symbol
Freq
Parameter
Min
5
Typ
Max
Unit
GHz
dB
Frequency range
Linear Gain
21
Gain
12.5
17.5
19
15
Pout-1dB Output Power @1dB gain compression
19.5
20.5
dBm
dBm
Psat
C/I3
Saturated Output Power
C/I3 @ Pin/tone = -8dBm , Vd = 5V
5.0 to 7.5GHz
40
34
33
-8
dBc
dBc
dBc
dB
7.5 to 16.5GHz
16.5 to 20GHz
dBS11
dBS22
NF
Input Return Loss
Output Return Loss
Noise Figure
-6
-8
-10
6
dB
dB
Vd
Drain supply voltage
Drain current
5
V
Id
120
mA
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
6.0
Unit
V
Vd
Id
Drain bias voltage
Drain bias current
Gate bias voltage
Gate bias current
175
mA
V
Vg
Ig
-2 to +0.4
+0.7
mA
Maximum negative gate drain Voltage (Vd-Vg/2)
(an array of resistor divides gate voltage by 2)
Vgd
8
V
Pin
Tj
Maximum continuous input power
Junction temperature
+10
175
dBm
°C
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
°C
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Vd
Pad No
Parameter
Values
+5.0
Unit
V
15
6
Drain voltage
Gate voltage
Vg
-1 to +0.4
V
Gate voltage is tuned to obtain 120mA drain current.
Vg can be either negative or positive supply bias.
Ref. : DSCHA3665-QAG2258 - 14 Sep 12
2/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5-21GHz Driver Amplifier
CHA3665-QAG
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below than the maximum value specified in the next table. So, the system PCB must
be designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below than the maximum temperature specified (see the curve Pdiss. Max) in
order to guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION : CHA3665-QAG
Recommended max. junction temperature (Tj max)
Junction temperature absolute maximum rating
Max. continuous dissipated power (Pdiss. Max.)
:
:
:
166 °C
175 °C
0.6 W
=> Pdiss. Max. derating above Tcase(1)= 85
Junction-Case thermal resistance (Rth J-C)(2)
Minimum Tcase operating temperature(3)
°C
:
:
:
7 mW/°C
<135 °C/W
-40 °C
Maximum Tcase operating temperature(3)
Minimum storage temperature
:
:
:
85 °C
-55 °C
150 °C
Maximum storage temperature
(1) Derating at junction temperature constant = Tj max.
(2) Rth J-C is calculated for a worst case considering the hottest junction of the MMIC and all the devices biased.
(3) Tcase=Package back side temperature measured under the die-attach-pad (see the drawing below).
0.7
0.6
0.5
0.4
0.3
0.2
Tcase
Example: QFN 16L 3x3
Location of temperature
reference point(Tcase)
on package's bottom side
0.1
0
Pdiss. Max. @Tj <Tj max (W)
-50
-25
0
25
50
75
100
125
150
175
Tcase (°C)
6.4
Ref. : DSCHA3665-QAG2258 - 14 Sep 12
3/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3665-QAG
5-21GHz Driver Amplifier
Typical Package Sij parameters
Tamb.= +25°C, Vd = +5V, Id = 120mA
Freq
(GHz)
S11
(dB)
PhS11
(°)
S12
(dB)
PhS12
(°)
S21
(dB)
PhS21
(°)
S22
(dB)
PhS22
(°)
1
0.0
-0.1
-37.5
-79.3
-138.9
153.7
77.2
-65.4
-65.8
-52.1
-41.7
-37.7
-37.3
-38.1
-37.9
-38.2
-37.9
-39.2
-41.0
-41.9
-44.1
-45.2
-45.5
-46.8
-43.7
-42.3
-39.5
-37.4
-37.6
-40.1
-45.4
-54.2
-40.4
-42.1
-42.3
-40.7
-37.7
93.7
135.7
94.9
-39.0
-31.9
-1.2
165.1
-53.5
-108.9
114.1
7.1
-0.1
-0.2
-31.1
-64.7
-106.0
-151.3
178.5
-111.7
-96.2
-119.4
-142.6
-163.2
-177.4
151.9
115.2
72.9
2
3
-1.9
-1.3
4
-13.1
-30.2
-14.8
-9.8
65.8
13.3
16.5
17.2
17.0
16.8
16.7
16.4
15.9
15.2
14.6
14.2
14.1
14.0
14.2
14.4
14.6
14.8
15.5
16.0
14.1
8.0
-5.4
5
-13.0
-71.7
-121.2
-165.4
151.2
105.3
65.9
-14.2
-24.3
-15.6
-13.1
-12.7
-13.5
-13.5
-13.3
-13.2
-12.6
-11.7
-10.4
-9.9
6
-20.8
-68.0
-109.4
-155.3
119.1
-7.9
-74.2
-140.4
162.3
108.7
56.6
7
8
-9.3
9
-12.3
-21.4
-13.9
-9.3
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
6.9
-55.2
-90.7
-124.1
-158.0
164.3
119.7
25.4
27.4
-40.5
-85.0
-128.6
-172.4
143.0
96.1
-7.4
0.4
-7.0
-30.3
-59.9
-91.7
-133.5
-163.7
154.6
109.2
56.3
-7.8
34.5
-10.2
-14.9
-25.9
-19.8
-14.6
-11.8
-8.9
-0.6
-32.4
-62.1
-94.7
-126.0
-158.6
155.8
89.3
47.1
-9.1
-127.4
156.5
70.6
-5.0
-8.9
-59.3
-120.0
166.6
75.3
-9.2
-9.2
-31.3
-163.9
72.5
-2.7
-9.6
-7.1
-95.5
132.9
125.4
84.2
-10.5
-9.9
-4.5
-13.1
-87.2
-149.4
158.2
109.6
63.0
13.5
-2.3
-5.0
-0.2
-6.6
-42.0
-82.6
-114.4
-138.2
-156.8
-171.3
-1.4
-56.0
-91.1
-118.5
-139.9
-158.8
-9.2
-3.8
-0.9
37.8
-18.6
-26.8
-32.5
-34.7
-2.2
-0.7
31.3
-1.2
-0.6
31.6
-0.7
-0.3
5.0
16.6
-0.4
Ref. : DSCHA3665-QAG2258 - 14 Sep 12
4/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5-21GHz Driver Amplifier
CHA3665-QAG
Typical Board Measurements
Tamb.= +25°C, Vd = +5V, Id = 120mA
Losses due to board are de-embedded. Measurements are given in the QFN’s access plan.
Noise, Gain and Return losses versus Frequency
Ref. : DSCHA3665-QAG2258 - 14 Sep 12
5/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3665-QAG
5-21GHz Driver Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +5V, Id = 120mA
Losses due to board are not de-embedded. Measurements are given in the connectors’
access plan.
Ouptut power and Gain versus Input power
5GHz
11GHz
15GHz
21GHz
Ouptut P-1dB versus Frequency
Ref. : DSCHA3665-QAG2258 - 14 Sep 12
6/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5-21GHz Driver Amplifier
CHA3665-QAG
Typical Board Measurements
Tamb.= +25°C, Vd = +5V, Id = 120mA
Losses due to board are not de-embedded. Measurements are given in the connectors’
access plan.
C/I3 versus Output power
5GHz
7GHz
11GHz
15GHz
19GHz
C/I3 versus Input power
5GHz
7GHz
11GHz
15GHz
19GHz
Ref. : DSCHA3665-QAG2258 - 14 Sep 12
7/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3665-QAG
5-21GHz Driver Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +5V, Id = 120mA
Losses due to board are not de-embedded. Measurements are given in the connectors’
access plan.
C/I3 versus Output power and
Temperature at 5GHz
C/I3 versus Output power and
Temperature at 11GHz
-40°C
-40°C
+85°C
+85°C
+25°C
+25°C
C/I3 versus Output power and
Temperature at 15GHz
C/I3 versus Output power and
Temperature at 19GHz
-40°C
-40°C
+85°C
+85°C
+25°C
+25°C
Ref. : DSCHA3665-QAG2258 - 14 Sep 12
8/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5-21GHz Driver Amplifier
CHA3665-QAG
Package outline (1)
Matt tin, Lead Free
Units :
(Green)
1- Gnd(2)
2- RF in
9- Nc
mm
10- Nc
3- Gnd(2) 11- RF out
From the standard :
JEDEC MO-220
(VGGD)
4- Nc
5- Nc
6- VG
7- Nc
8- Nc
12- Gnd(2)
13- Nc
14- Nc
15- VD
16- Nc
17- GND
(1) The package outline drawing included to this data-sheet is given for indication. Refer to the
application note AN0017 (http://www.ums-gaas.com) for exact package dimensions.
(2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board.
Ensure that the PCB board is designed to provide the best possible ground to the package.
Ref. : DSCHA3665-QAG2258 - 14 Sep 12
9/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3665-QAG
5-21GHz Driver Amplifier
Definition of the Sij reference planes
The reference planes used for Sij
measurements given above are symmetrical
from the symmetrical axis of the package
(see drawing beside). The input and output
reference planes are located at 3.18mm
offset (input wise and output wise
respectively) from this axis. Then, the given
Sij parameters incorporate the land pattern of
the evaluation motherboard recommended in
paragraph "Evaluation mother board".
Ref. : DSCHA3665-QAG2258 - 14 Sep 12
10/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5-21GHz Driver Amplifier
CHA3665-QAG
Evaluation mother board
■ Compatible with the proposed footprint.
■ Based on typically Ro4003 / 8mils or equivalent.
■ Using a micro-strip to coplanar transition to access the package.
■ Recommended for the implementation of this product on a module board.
■ Decoupling capacitors of 10nF ±10% are recommended for all DC accesses.
■ See application note AN0017 for details.
Ref. : DSCHA3665-QAG2258 - 14 Sep 12
11/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3665-QAG
5-21GHz Driver Amplifier
Recommended package footprint
Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot
print recommendations.
SMD mounting procedure
For the mounting process standard techniques involving solder paste and a suitable reflow
process can be used. For further details, see application note AN0017.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS package products.
Ordering Information
QFN 3x3 RoHS compliant package:
CHA3665-QAG/XY
Stick: XY = 20
Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA3665-QAG2258 - 14 Sep 12
12/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
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