CHA6105-99F [UMS]
8-12GHz Driver Amplifier; 8-12GHz驱动器放大器
| 型号： | CHA6105-99F |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 8-12GHz Driver Amplifier |
| 文件： | 总8页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHA6105
RoHS COMPLIANT
8-12GHz Driver Amplifier
GaAs Monolithic Microwave IC
Description
VD1
VD2
VD3
The CHA6105 is a monolithic three-stage
medium power amplifier designed for
X-band applications.
●
●
IN
OUT
The driver provides typically 31.5dBm
output power at saturation and is suitable
for systems requiring a high compression
level. Moreover it includes a biasing
control circuit that makes Pout less
sensitive to spread and chip environment.
VD3
Control circuit
V_C
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
34
33
32
31
30
29
28
27
26
25
24
23
22
1100
1050
1000
950
900
850
800
750
700
650
600
550
500
Pout (dBm) @ 3dBc
It is available in chip form.
Main Features
Id (mA) @ 3dBc
Linear Gain (dB)
ꢀ Frequency range: 8-12GHz
ꢀ 31.5dBm Saturated output power
ꢀ 30dB Linear Gain
7
7,5
8
8,5
9
9,5
10
10,5
11
11,5
12
12,5
13
Frequency (GHz)
ꢀ Quiescent bias point: 8V@700mA
ꢀ Chip size: 2.80 x 2.21 x 0.07mm
Pout & Id @ 3dB gain compression
and Linear Gain (Pulse 25µs 10% Tamb. 20°C)
Main Characteristics
Tamb = +20°C, Vc = +8V (Pulse 25µs 10%)
Symbol
Fop
Parameter
Operating frequency range
Small signal gain
Min
Typ
Max
Unit
GHz
dB
8
12
G
30
Psat
Idq
Saturated output power
Power supply quiescent current
31.5
700
dBm
mA
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA61050106 - 16 Apr 10
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
8-12GHz Driver Amplifier
CHA6105
Electrical Characteristics
Vd = +8V, Pulse 25µs 10%
Symbol
Top
Parameter
Min
-40
8
Typ
Max
85
Unit
°C
Operating temperature range
Operating frequency range
Fop
12
GHz
dB
G
Small signal gain at 25°C
25.5
30
-0.03 5
30.5
31
34
Linear gain variation vs temperature at 25°C
Output power at 1dB gain compression at 25°C
Output power at 3dB gain compression at 25°C
Output power at saturation
Input Return Loss
dB/°C
dBm
dBm
dBm
dB
∆G_T
P1dB
P3dB
Psat
dBS11
dBS22
Vd
29.5
31.5
2:1
Output Return Loss
2:1
dB
Power supply voltage
8
V
Idq
Power supply quiescent current
700
mA
Id_3dBc Consumption under 3dB gain compression
925
-5
1150
mA
V
V_c
I_c
Drain current control voltage
Biasing circuit consumption
25
mA
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Pin_max
Cmp
Parameter
Values
Unit
dBm
dB
Maximum RF input power
Compression level
13
13
9
Vd
Power supply voltage
V
<Id>
maximum value of CW power supply current
Drain current control voltage
850
-6
mA
V
V_c
Tj
Maximum Junction temperature
Storage temperature range
175
°C
°C
Tstg
-55 to +125
(1) Operation of this device above anyone of these parameters may cause permanent damage
Ref. : DSCHA61050106 - 16 Apr 10
2/8
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
8-12GHz Driver Amplifier
CHA6105
Typical measurement characteristics
Measurements
Vd = 8V; Vctrl = -5V (Id Quiescent = 700mA). Pulsed = 25µs 10%
40
38
36
34
32
30
28
26
24
22
20
18
85°C
25°C
-20°C
-40°C
7
7,5
8
8,5
9
9,5
10
10,5
11
11,5
12
12,5
13
Frequency (GHz)
Linear gain vs frequency and temperature
34
33
32
31
30
29
28
27
26
25
24
Temp 85°C
Temp 25°C
Temp -20°C
Temp -40°C
7
7,5
8
8,5
9
9,5
10
10,5
11
11,5
12
12,5
13
Frequency (GHz)
Output Power @ 3dB gain compression vs frequency and temperature
Ref. DSCHA61050106 - 16 Apr 10
3/8
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
8-12GHz Driver Amplifier
CHA6105
Ic-low Pin Temp 85°C
Ic-low Pin Temp 25°C
Ic-low Pin Temp -20°C
Ic-low Pin Temp -40°C
Ic-3dB Temp 85°C
1100
1050
1000
950
900
850
800
750
700
650
600
550
Ic-3dB Temp 25°C
Ic-3dB Temp -20°C
Ic-3dB Temp -40°C
500
7
7,5
8
8,5
9
9,5
10
10,5
11
11,5
12
12,5
13
Frequency (GHz)
Drain current @ low Pin and @ 3dB gain compression vs frequency and temperature
Tamb = 25°C, Vd = 8V; Vctrl = -5V (Id Quiescent = 7 00mA). Pulsed = 25µs 10%
34
32
30
28
26
24
22
20
18
16
14
8GHz
9GHz
10GHz
11GHz
12GHz
-15 -13 -11 -9
-7
-5
-3
-1
1
3
5
7
9
11
13
Pin (dBm)
Output power vs Input power
Ref. : DSCHA61050106 - 16 Apr 10
4/8
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
8-12GHz Driver Amplifier
CHA6105
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
8GHz
9GHz
10GHz
11GHz
12GHz
-2
-1
0
1
2
3
4
5
6
7
8
9
10 11 12 13
Compression (dB)
Output power vs Gain compression
1100
1050
1000
950
900
850
800
750
700
650
600
550
500
8GHz
9GHz
10GHz
11GHz
12GHz
-15 -13 -11 -9
-7
-5
-3
Pin (dBm)
Drain current vs Input power
-1
1
3
5
7
9
11 13
Ref. DSCHA61050106 - 16 Apr 10
5/8
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
8-12GHz Driver Amplifier
CHA6105
Chip Mechanical Data and Pin references
2
3
4
5
6
1
16 15
14 13 12
11 10 9
8
7
Chip thickness = 70µm +/- 10µm
RF pads (1, 6) = 122 x 150µm²
DC pads (2, 8, 9, 10, 11, 12, 13, 14, 15, 16) = 100 x 100µm²
DC pads (3, 4, 5, 7) = 186 x 100µm²
Pin number
Pin name
IN
Description
Input RF
Control Voltage
Not used
1
11
14
V_C
GR
2, 8, 12, 15
9, 10, 13, 16
3, 4, 5, 7
6
GND
-
VD
Ground (NC)
Not Used
Drain supply voltage
Output RF
OUT
Ref. : DSCHA61050106 - 16 Apr 10
6/8
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
8-12GHz Driver Amplifier
CHA6105
Assembly recommendations in test fixture
Ref. DSCHA61050106 - 16 Apr 10
7/8
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
8-12GHz Driver Amplifier
CHA6105
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity
and handling recommendations for the UMS products.
Ordering Information
Chip form
:
CHA6105-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S.
assumes no responsibility for the consequences of use of such information nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any
patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication
are subject to change without notice. This publication supersedes and replaces all information previously supplied.
United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life
support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA61050106 - 16 Apr 10
8/8
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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