CHA7115-99F [UMS]
X-band High Power Amplifier; X波段高功率放大器
| 型号： | CHA7115-99F |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | X-band High Power Amplifier |
| 文件： | 总6页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHA7115-99F
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
Vg3
Vd3
The CHA7115 is a monolithic three-stage
GaAs high power amplifier designed for
X-band applications.
The HPA provides typically 8W output power
associated to 36% power added efficiency at
Vg2 Vd2
Vg1
Vd1
IN
OUT
4dBcomp and
mismatch load.
a
high robustness on
Vd2
This device is manufactured using 0.25µm
Power pHEMT process, including, via holes
through the substrate and air bridges.
It is available in chip form.
Vg3 Vd3
44
Main Features
42
40
38
36
34
32
30
28
26
24
22
Pout @ 4dBc
0.25µm Power pHEMT Technology
Frequency band: 8.5 – 11.5GHz
Output power : 39dBm @ 4dBcomp
High linear gain: > 27dB
High PAE : 37% @ 4dBcomp
Quiescent bias point: Vd=8V, Id=2.2A
Chip size: 4.59 x 3.31 x 0.07mm
PAE @ 4dBc
Linear Gain
Pulse : 25µs 10%
8
8.5
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Main Characteristics
Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
8.5
11.5
GHz
%
PAE_4dB Power added efficiency @4dBcomp @ 20°C
37
39
P_4dB
G
Output power @ 4dBcomp @ 20°C
Small signal gain @ 20°C
dBm
dB
27.5
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA71151069 - 10 Mar 11
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7115-99F
Electrical Characteristics on wafer
Tamb = 20°C, Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Operating frequency
Min
Typ
Max
Unit
GHz
dB
dB
dB
dBm
%
Fop
8.5
11.5
G
Small signal gain
27.5
10
RLin
Input Return Loss
RLout
P_4dBc
PAE_4dB
Id_4dB
Vd1, Vd2, Vd3
Id
Output Return Loss
12
Output power @ 4dBcomp (2)
Power Added Efficiency @ 4dBcomp
Supply drain current @ 4dBcomp
Drain supply voltage (2)
Supply quiescent current (1)
Gate supply voltage
39
37
2.6
8
A
V
2.2
-1.4
A
Vg
V
(1) Parameter can be adjusted by tuning of Vg.
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings).
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Cmp
Vd
Parameter
Compression level (2)
Values
Unit
dB
V
6
Supply voltage (3)
10
2.8
Id
Supply quiescent current
Supply current in saturation
Supply voltage
A
Id_sat
Vg
4
A
-0.8
V
Tj
Maximum junction temperature
Storage temperature range
Operating temperature range
175
°C
°C
°C
Tstg
Top
-55 to +150
-40 to +80
(1)
(2)
(3)
Operation of this device above anyone of these parameters may cause permanent
damage.
For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5V/dBc.
Without RF input power.
Ref DSCHA71151069 - 10 Mar 11
2/6
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7115-99F
Typical measured characteristics
Measurements on Wafer:
Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Linear gain versus frequency
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
8
8.5
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Output Power @ 4dBcomp versus frequency
42.0
41.5
41.0
40.5
40.0
39.5
39.0
38.5
38.0
37.5
37.0
36.5
36.0
35.5
35.0
8
8.5
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Ref : DSCHA71151069 - 10 Mar 11
3/6
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7115-99F
Power added efficiency @ 4dBcomp versus frequency
46
44
42
40
38
36
34
32
30
28
26
24
8
8.5
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Drain Current @ 4dBcomp versus frequency
4
3.5
3
2.5
2
1.5
1
0.5
0
8
8.5
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Ref DSCHA71151069 - 10 Mar 11
4/6
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7115-99F
Chip Mechanical Data and Pin references
2
3
4
5
6
7
8
9 10 11 12
13
14
15
1
16
27 26 25 24
23 22 21 20
19
18
17
Chip width and length are given with a tolerance of +/- 35µm
Chip thickness
RF pads (1, 16)
DC pads wide (14, 18)
= 70µm +/- 10µm
= 118 x 196µm²
= 186 x 100µm²
DC pads (others, 2 to 27) = 100 x 100µm²
Pin number
Pin name
Description
Input RF
1
2, 5, 6, 7, 8, 11, 12, 20, 24, 25
3, 21
4, 9, 13, 15, 17, 19, 23, 27
10, 14, 18, 22,26
16
IN
G
GR
GND
VD
NC
Gate supply voltage
Ground (NC)
Drain supply voltage
Output RF
OUT
Ref : DSCHA71151069 - 10 Mar 11
5/6
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7115-99F
Bonding recommendations
Port
IN
Connection
Inductance (Lbonding) = 0.3nH
2 gold wires with diameter of 25µm (550µm max)
External capacitor
Inductance (Lbonding) = 0.3nH
2 gold wires with diameter of 25µm (550µm max)
OUT
C1 ~ 100pF, C2 ~ 10nF
C1 ~ 100pF
Vg
Vd
Inductance 1nH
Inductance 1nH
Assembly recommendations in test fixture
Vg
Vd
Vg
Vd
C1=100pF
C2=10nF
Non capacitive pad
Ordering Information
Chip form
:
CHA7115-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref DSCHA71151069 - 10 Mar 11
6/6
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
相关型号：
CHA8100-99F/00
Wide Band High Power Amplifier, 9000MHz Min, 10500MHz Max, 4.90 X 3.68 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, DIE-22
UMS
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