CHA7215 [UMS]

X-band High Power Amplifier; X波段高功率放大器


型号：	CHA7215
厂家：	UNITED MONOLITHIC SEMICONDUCTORS
描述：	X-band High Power Amplifier X波段高功率放大器放大器功率放大器
文件：	总8页 (文件大小：198K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CHA7215

RoHS COMPLIANT

X-band High Power Amplifier

GaAs Monolithic Microwave IC

VD1

VD2

VD3

VG1R

VG2R

VG3R

Description

●

The CHA7215 is a monolithic three-stage

GaAs high power amplifier designed for X

band applications.

●

OUT

The HPA provides typically 9W output power

associated to 35% power added efficiency at

4dBc and a high robustness on mismatch

load.

●

VD1

VD2

VG3R VD3

This device is manufactured using 0.25 µm

Power pHEMT process, including, via holes

through the substrate and air bridges.

Output Power versus Frequency @Pin=19dBm

40,5

39,5

Main Features

38,5

ꢀ 0.25 µm Power pHEMT Technology

ꢀ Frequency band: 8.5 – 11.5GHz

ꢀ Output power: 39.5dBm at saturation

ꢀ High linear gain: 28dB

ꢀ Power added efficiency: 34% @4dBc

ꢀ Quiescent bias point: Vd=8V, Id=2.3A

37,5

36,5

Temp=-40°C

Temp=+20°C

Temp=+80°C

35,5

ꢀ Chip size: 5 x 3.31 x 0.07mm

8,5

9,5

10,5

11,5

Frequency (GHz)

Main Characteristics

Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10%

Symbol

Parameter

Operating temperature range

Operating frequency range

Min

-40

8.5

Typ

Max

+80

11.5

Unit

Top

°C

GHz

Fop

PAE_4dBc Power added efficiency @4dBc @ 20°C

Psat

Saturated output power @ 20°C

Small signal gain @ 20°C

39.5

dBm

ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!

Ref : DSCHA72159287 - 14 Oct 09

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7215

Electrical Characteristics on test fixture

Tamb = 20°C, Vd=8V, Id (Quiescent) = 2.3A, Drain Pu lse width = 25µs, Duty cycle = 10%

Symbol

Fop

Parameter

Operating frequency

Min

8.5

Typ

Max

11.5

Unit

GHz

Small signal gain

Small signal gain variation versus

temperature

-0.05

dB/°C

G_T

RLin

RLout

Psat

Input Return Loss

Output Return Loss

Saturated output power

39.5

-0.01

dBm

dB/°C

Saturated output power variation versus

temperature

Psat_T

PAE_4dBc

Power added efficiency @4dBc

Supply drain current @ 4dBc

Drain supply voltage (2)

3.3

Id_4dBc

4.4

Vd1, Vd2, Vd3

Supply quiescent current (1)

Gate supply voltage

2.3

-2.2

Vg1, Vg2, Vg3

(1) Parameter can be adjusted by tuning of Vg.

(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on

robustness see Maximum ratings)

Absolute Maximum Ratings (1)

Tamb = 20°C

Symbol

Cmp

Parameter

Compression level (2)

Values

Unit

dBc

Supply voltage with RF input power

Supply voltage without RF input power

Supply quiescent current

Id_sat

Supply current in saturation

Supply voltage

4.8

-1.1

Maximum junction temperature

Storage temperature range

Operating temperature range

175

°C

Tstg

Top

(1)

-55 to +125

-40 to +80

Operation of this device above anyone of these parameters may cause

permanent damage.

(2)

For higher compression the level limit can be increased by decreasing the voltage

Vd using the rate 0.5 V / dBc

Ref : DSCHA72159287 - 14 Oct 09

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7215

Typical measured characteristics

Measurements on Jig:

Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10%

Temp=-40°C

Temp=+20°C

Temp=+80°C

8,5

9,5

10,5

11,5

Frequency (GHz)

Linear gain versus frequency and temperature

Pout

Gain

Temp=-40°C

Temp=+20°C

Temp=+80°C

Input Power (dBm)

Linear Gain and Output Power @Freq=10GHz

versus input power and temperature

Ref : DSCHA72159287 - 14 Oct 09

3/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7215

40,5

39,5

38,5

37,5

Temp=-40°C

Temp=+20°C

Temp=+80°C

36,5

35,5

34,5

8,5

9,5

10,5

11,5

Frequency (GHz)

Output Power @Pin=17dBm versus frequency and temperature

4,5

3,5

2,5

1,5

Temp=-40°C

Temp=+20°C

Temp=+80°C

0,5

8,5

9,5

10,5

11,5

Frequency (GHz)

Id @Pin=17dBm versus frequency and temperature

Ref : DSCHA72159287 - 14 Oct 09

4/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7215

Temp=-40°C

Temp=+20°C

Temp=+80°C

8,5

9,5

10,5

11,5

Frequency (GHz)

PAE @Pin=17dBm versus frequency and temperature

Ref : DSCHA72159287 - 14 Oct 09

5/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7215

Chip Mechanical Data and Pin references

3 205

10 11

1 855

1 655

1 855

1 655

28 27 26 25 24 23 22 21 20 19

17 16

105

000

5 000

Chip thickness = 70µm +/- 10 µm

RF pads (1, 15) = (122 x 200) µm²

DC pads (2 to 12, 14, 16, 18 to 28) = (100 x 100) µm²

DC pads (13, 17) = (186 x 100) µm²

Pin number

1, 15

3, 8, 12, 18

Pin name

IN / OUT

GiR

Gi / GiR

Description

Input / Output RF

Gate supply voltage

Ground (Not connected)

Drain supply voltage

Not connected

4, 6, 10, 14, 16, 20, 24, 26

5, 9, 13, 17, 21, 25

2, 7, 11, 19, 22, 23, 27, 28

Ref : DSCHA72159287 - 14 Oct 09

6/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7215

Bonding recommendations

Port

Connection

External capacitor

Inductance (Lbonding) = 0.35nH

2 gold wires with diameter of 25 µm (600µm max)

Inductance (Lbonding) = 0.35nH

OUT

2 gold wires with diameter of 25 µm (600µm max)

C1 ~ 100pF

C2 ~ 10nF

C1 ~ 100pF

Inductance ≤ 1nH

Assembly recommendations in test fixture

C1=100pF

C2=10nF

Non capacitive pad

Recommended ESD management

Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD

sensitivity and handling recommendations for the UMS products.

Ref : DSCHA72159287 - 14 Oct 09

7/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7215

Ordering Information

Chip form

CHA7215-99F/00

Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors

S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of

patents or other rights of third parties which may result from its use. No license is granted by implication or

otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications

mentioned in this publication are subject to change without notice. This publication supersedes and replaces all

information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use

as critical components in life support devices or systems without express written approval from United

Monolithic Semiconductors S.A.S.

Ref : DSCHA72159287 - 14 Oct 09

8/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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