CHR2295-99F [UMS]

24-30GHz Integrated Down Converter; 24-30GHz集成下变频器


型号：	CHR2295-99F
厂家：	UNITED MONOLITHIC SEMICONDUCTORS
描述：	24-30GHz Integrated Down Converter 24-30GHz集成下变频器
文件：	总6页 (文件大小：180K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CHR2295

RoHS COMPLIANT

24-30GHz Integrated Down Converter

GaAs Monolithic Microwave IC

Description

The CHR2295 is a multifunction chip which

integrates a LO time two multiplier, a

balanced cold FET mixer, and a RF LNA. It

is designed for a wide range of applications,

typically

commercial

communication

systems. The backside of the chip is both RF

and DC grounds. This helps simplify the

assembly process.

VDM

VDL

The circuit is manufactured with a pHEMT

process, 0.25µm gate length, via holes

through the substrate, air bridges and

electron beam gate lithography.

VGA

It is available in chip form.

Main Features

12.00

8.00

4.00

■ Broadband performances: 24-30GHz

■ 11dB conversion gain

Gc_channel_sup_rf+

Gc_channel inf_rf-

Gc_channel_inf_rf+

Gc_channel_sup_rf-

0.00

-4.00

-8.00

-12.00

-16.00

-20.00

-24.00

■ 3.5dB noise figure, for IF>0.1GHz

■ 10dBm LO input power

■ -10dBm RF IP@1dB gain comp.

■ Low DC power: 120mA@3.5V

■ Chip size: 2.49x1.97x0.10mm

22.5

23.5

24.5

25.5

26.5

27.5

28.5

29.5

30.5

31.5

32.5

2XLO Frequency (GHz)

Conversion Gain & Image suppression

@IF=1.5GHz (test board losses included)

Main Characteristics

Tamb. = 25°C

Symbol

F_RF

Parameter

RF frequency range

Min

Typ

Max

Unit

GHz

F_LO

LO frequency range

IF frequency range

Conversion gain

F_IF

8.5

1.5

G_c

ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!

Ref.: DSCHR22951192 - 11 Jul 11

1/6

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel.: +33 (0)1 69 33 03 08 - Fax: +33 (0)1 69 33 03 09

24-30GHz MFC Down Converter

CHR2295

Electrical Characteristics for Broadband Operation

Tamb = +25°C, Vd = 3.5V

Symbol

F_RF

Parameter

RF frequency range

Min

Typ

Max

Unit

GHz

F_LO

LO frequency range

F_IF

IF frequency range

Conversion gain ⁽¹⁾

8.5

1.5

G_c

3.5

Noise Figure, for IF>0.1GHz

LO Input power

P_LO

dBm

dBc

dBm

Img Sup

Image Suppression

P1dB

Input power at 1dB gain compression

-10

LO VSWR Input LO VSWR ⁽¹⁾

RF VSWR Input RF VSWR ⁽¹⁾

2.0:1

3.0:1

120

(1) On Wafer measurements

Bias current ⁽²⁾

(2) Current source biasing network is recommended. Optimum performances will be

achieved for Idm=50mA and Idl=70mA

Absolute Maximum Ratings

Tamb. = 25°C ⁽¹⁾

Symbol

Parameter

Drain bias voltage

Values

4.0

Unit

Drain bias current

200

Gate bias voltage

-2.0 to +0.4

+15

Maximum peak input power overdrive ⁽²⁾

Operating temperature range

Storage temperature range

dBm

°C

-40 to +85

-55 to +155

Tstg

°C

(1) Operation of this device above anyone of these parameters may cause permanent

damage.

(2) Duration < 1s.

Ref.: DSCHR22951192 - 11 Jul 11

2/6

Specifications subject to change without notice

Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

24-30GHz MFC Down Converter

CHR2295

Typical On-wafer Measurements

Bias Conditions : Vdm= Vdl= 3.5V, Vgm= -0.9V, Vgb= -0.3V, Vgx= -0.7V, Vga= -0.2V

-2

-4

-6

Freq_RF= 24.6GHz

Freq_LO= 12.05GHz

-8

-10

-12

-14

IF power_I (dBm)

IF power_Q (dBm)

Conv_gain I (dB)

Conv_gain Q (dB)

-20

-18

-16

-14

-12

-10

-8

-6

-4

Input RF power (dBm)

-2

-4

-6

-8

-10

-12

-14

Freq_RF= 28GHz

Freq_LO= 13.75GHz

IF power_I (dBm)

IF power_Q (dBm)

Conv_gain I (dB)

Conv_gain Q (dB)

-20

-18

-16

-14

Input RF power (dBm)

Input RF compression by channel

-12

-10

-8

-6

-4

Ref.: DSCHR22951192 - 11 Jul 11

3/6

Specifications subject to change without notice

Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

24-30GHz MFC Down Converter

CHR2295

Typical On-board Measurements

Bias Conditions : Vdm= Vdl= 3.5V, Vgm= Vgx= -0.9V, Vgb= Vga= -0.3V

All these measurements include the losses from the test board (typically 1dB for the

conversion gain and 0.5dB for the Noise Figure).

12.00

8.00

4.00

0.00

-4.00

IF=1GHz

-8.00

IF=2GHz

IF=1.5GHz

-12.00

-16.00

-20.00

-24.00

IF=1GHz

IF=2GHz

IF=1.5GHz

27.5

22.5

23.5

24.5

25.5

26.5

28.5

29.5

30.5

31.5

32.5

2XLO Frequency (GHz)

Conversion gain & Image suppression versus IF frequency

Channel_sup_IF_1GHz

Channel_sup_IF_1.5GHz

Channel_sup_IF_2GHz

Channel_inf_IF_1GHz

Channel_inf_IF_1.5GHz

Channel_inf_IF_2GHz

24.5

25.5

26.5

27.5

28.5

29.5

RF Frequency (GHz)

Noise figure supradyne & infradyne versus IF frequency

Ref.: DSCHR22951192 - 11 Jul 11

4/6

Specifications subject to change without notice

Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

24-30GHz MFC Down Converter

CHR2295

Chip Assembly and Mechanical Data

To Vgm DC Gate Supply

To Vgb DC Gate Supply

OUT

To Vdm,Vdl DC Drain Supply

To Vgx DC Gate Supply

OUT

To Vga DC Gate Supply

Note: Supply feed should be bypassed. 25µm diameter gold wire is recommended

Bonding pad positions

(Chip thickness: 100µm. All dimensions are in micrometers)

Ref.: DSCHR22951192 - 11 Jul 11

5/6

Specifications subject to change without notice

Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

24-30GHz MFC Down Converter

CHR2295

Recommended ESD management

Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD

sensitivity and handling recommendations for the UMS products.

Ordering Information

Chip form:

CHR2295-99F/00

Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors

S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of

patents or other rights of third parties which may result from its use. No license is granted by implication or

otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications

mentioned in this publication are subject to change without notice. This publication supersedes and replaces all

information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use

as critical components in life support devices or systems without express written approval from United

Monolithic Semiconductors S.A.S.

Ref.: DSCHR22951192 - 11 Jul 11

6/6

Specifications subject to change without notice

Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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