CHR2299-99F [UMS]
40-44GHz Down converter; 40-44GHz下变频器
| 型号： | CHR2299-99F |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 40-44GHz Down converter |
| 文件： | 总12页 (文件大小：398K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHR2299-99F
RoHS COMPLIANT
40-44GHz Down converter
GaAs Monolithic Microwave IC
Description
The CHR2299-99F is a down converter
multifunction chip, which integrates LO X4
multiplier, a balanced cold FET mixer and a
RF LNA.
IF_I
It is designed for
a
wide range of
applications, from military to commercial
communication systems.
X4
IF_Q
The circuit is manufactured with a power
pHEMT process, 0.15µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
RF_IN
It is available in chip form.
Main Features
30
28
26
24
22
20
18
16
14
12
10
■ 40-44GHz RF bandwidth
■ 21dB conversion gain
■ x4 LO frequency multiplier
■ x4 LO output port
■ > 12dB image rejection
■ DC bias: Vd = 4V @ Id = 240mA
■ Chip size 3.97x2.25x0.1mm
supradyne
41 42
infradyne
43 44
39
40
45
RF_frequency (GHz)
Main Characteristics
Tamb.= +25°C
Symbol
Parameter
RF frequency range
Min
Typ
Max
Unit
F_RF
40
9.5
DC
44
11.5
2.0
GHz
F_LO
F_IF
Gc
LO frequency range
IF frequency range
Conversion gain
GHz
GHz
dB
21
Ref. : DSCHR22992012 - 19 Jan 12
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Electrical Characteristics
Tamb. = +25°C
Symbol
Parameter
Min
Typ
Max
Unit
F_RF
RF frequency range
LO frequency range
IF frequency range
40
44
GHz
F_LO
F_IF
9.5
DC
11.5
2.0
GHz
GHz
dB
Gc
Conversion gain
21
12
0
Im rej
P_LO
NF
Image rejection
dB
LO Input power
dBm
dB
Noise figure for IF>0.1GHz
Intermodulation level at Pin2tones = -30dBm
RF Return Loss
4.5
45
6
IMD3
RL_RF
RL_LO
P_4FLO
dBc
dB
LO Return Loss
12
-1
dB
Output power at 4LO_OUT port
dBm
dBm
V
4xFLO_Lk 4xFLO leakage on RF port
-38
4
DX, DA
GM
LO multiplier, buffer and LNA biasing
Mixer gate biasing
-0.6
-0.3
-1.2
240
V
G3
LO buffer gate biasing
Multiplier gate biasing
Total biasing current
V
GX
V
IdT
mA
Electrostatic discharge sensitive device observe handling precautions!
These values are representative of chip on board measurements with a 90° hybrid coupler.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
DX, DA
IdT
Parameter
LO multiplier, buffer and LNA biasing
Total biasing current
Values
4.5
Unit
V
300
mA
V
GM, G3, GX Gate bias voltage
-2; +0.6
10
P_LO
Pin_RF
Tj
Maximum peak input LO power overdrive (2)
Maximum peak input RF power overdrive (2)
Junction temperature
dBm
dBm
°C
-5
175
Ta
Operating temperature range
-40 to +85
°C
Tstg
RTh
Storage temperature range
-55 to +155 °C
80 °C/W
Thermal resistance, Tback side = +85 °C, Ptotal = 0.96 W
(1) Operation of this device above anyone of these parameters may cause permanent damage
(2) Duration < 1s
Ref. : DSCHR22992012 - 19 Jan 12
2/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
40-44GHz Down converter
CHR2299-99F
Typical chip on board Measurements in Temperature
DX= DA = 4V, GM = -0.6V, G3 = -0.3V, GX = -1.2V, P_LO = 0dBm
These values are representative of onboard measurements as defined on the section
”Evaluation mother board”. The losses are de-embedded.
Conversion Gain versus RF frequency & temperature
RF = 4LO-IF; IF = 1GHz
30
28
26
24
22
20
18
16
14
-40 °C
+25 °C
+85 °C
12
10
39
40
41
42
43
44
45
RF_frequency (GHz)
Conversion Gain versus RF frequency & temperature
RF = 4LO+IF; IF = 1GHz
30
28
26
24
22
20
18
16
14
12
10
-40 °C
+25 °C
+85 °C
39
40
41
42
43
44
45
RF_frequency (GHz)
Ref. : DSCHR22992012 - 19 Jan 12
3/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Typical chip on board Measurements in Temperature
Conversion Gain versus RF frequency & temperature
RF = 4LO+/-IF; IF = 3.5GHz
Conversion Gain versus RF frequency & temperature
RF = 4LO+IF; IF = 6GHz
30
28
26
24
22
20
18
16
14
12
10
-40 °C
+25 °C
+85 °C
39
40
41
42
43
44
45
RF_frequency (GHz)
Ref. : DSCHR22992012 - 19 Jan 12
4/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
40-44GHz Down converter
CHR2299-99F
Typical chip on board Measurements in Temperature
Image rejection versus RF frequency & temperature
RF = 4LO+/-IF; IF = 2GHz
30
-40 °C; sup
inf
+25 °C; sup
inf
+85 °C; sup
inf
25
20
15
10
5
39
40
41
42
43
44
45
RF_frequency (GHz)
Image rejection versus RF frequency & temperature
RF = 4LO+IF; IF = 6GHz
50
45
40
35
30
-40 °C
+25 °C
+85 °C
39
40
41
42
43
44
45
RF_frequency (GHz)
Ref. : DSCHR22992012 - 19 Jan 12
5/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Typical chip on board Measurements
IMD3 versus RF frequency & Input power
Supradyne: IF = 2GHz
Infradyne: IF = 2GHz
100
90
80
70
60
50
40
30
20
100
90
80
70
60
50
40
30
20
38.5 GHz
42.5 GHz
40.5 GHz
44.5 GHz
40.5 GHz
-35
42.5 GHz
44.5 GHz
-40
-30
-25
-20
-40
-35
-30
-25
-20
Input power 2tones (dBm)
Input power 2tones (dBm)
Input IP3 versus Temperature & Input power
Supradyne: RF = 40.5GHz; IF = 2GHz
Supradyne: RF = 40.5GHz; IF = 3.5GHz
10
8
10
8
6
6
4
4
2
2
0
0
-2
-4
-6
-8
-2
-4
-6
-8
-10
-40 °C
-35
+25 °C
+85 °C
-40 °C
+25 °C
+85 °C
-25
-10
-40
-35
-30
-20
-40
-30
-25
-20
Input power 2tones (dBm)
Input power 2tones (dBm)
Ref. : DSCHR22992012 - 19 Jan 12
6/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
40-44GHz Down converter
CHR2299-99F
Typical chip on board Measurements
LO harmonics Power level on RF port
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
P_LO
P_2LO
P_4LO
8
9
10
11
12
13
14
LO Frequency (GHz)
RF & LO return loss (in the connectors plan)
0
-5
-10
-15
-20
-25
-30
LO return loss
RF return loss
0
5
10
15
20
25
30
35
40
45
50
Frequency (GHz)
Ref. : DSCHR22992012 - 19 Jan 12
7/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Mechanical data
Chip thickness: 100 µm, units: µm, tol:+/- 35 µm
DC pads = 92x92 µm, RF pads = 178x114 µm
Pin number
Pin name
Description
1
2
RF_IN
DA
RF input
LNA drain voltage
Multiplier & Buffer drain voltage
Multiplier gate voltage
LO buffer gate voltage
Mixer gate voltage
IF outputs
3
DX
4
GX
5
G3
6
GM
7, 8
9
IF_I & IF_Q
4LO_OUT
LO_IN
Output 4xLO frequency
LO input
10
Recommended biasing
Pin Name
GM
Pin Number
Parameter
Nominal value
6
5
4
3
2
Mixer gate voltage
-0.6 V
-0.3 V
-1.2 V
4 V
G3
LO buffer gate voltage
X4 gate voltage
GX
DX
X4 and buffer drain voltage
LNA Drain voltage
DA
4 V
Ref. : DSCHR22992012 - 19 Jan 12
8/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
40-44GHz Down converter
CHR2299-99F
LO input
Chip assembly
Optionnal
4LO output
RF input
IF_I & IF_Q
to 90° hybrid coupler
Capacitors
120pF
DC Suply
Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended
Ref. : DSCHR22992012 - 19 Jan 12
9/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Evaluation mother board
Based on typically Ro4003 / 8 mils or equivalent.
Decoupling capacitors of 10nF 10% and chip 120pF 10%
90° hybrid coupler: 1-2GHz or 2-4GHz
Ref. : DSCHR22992012 - 19 Jan 12
10/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
40-44GHz Down converter
CHR2299-99F
DC Schematic
LO multiplier and buffers: 4V, 105mA
DX
IF
I
LO out
20
2 k
50
70
40
500
50
30 mA
15 mA
30 mA
30 mA
11.3
11.3
112
LO
500
IF
Q
20
200
200
200
150
500
Mixer
GM
LO amplifier
X2 multiplier
X2 multiplier
4LO amplifier
GX
G3
LNA: 4V, 140mA
DA
6
3
3
2
3.7 k
16
3.44 k
100
3.44 k
3.42 k
100
23
17 mA
34 mA
34 mA
54 mA
RF
50
450
25
450
25
450
16
160
Ref. : DSCHR22992012 - 19 Jan 12
11/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Ordering Information
Chip form:
CHR2299-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHR22992012 - 19 Jan 12
12/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
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