CHR2391-9900 [UMS]
12-16GHz Integrated Down Converter; 12-16GHz集成下变频器
| 型号： | CHR2391-9900 |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 12-16GHz Integrated Down Converter |
| 文件： | 总6页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHR2391
RoHS COMPLIANT
12-16GHz Integrated Down Converter
GaAs Monolithic Microwave IC
Description
The CHR2391 is a multifunction chip which
integrates a LO time two multiplier, a balanced
cold FET mixer, and a RF LNA. It is designed for
a wide range of applications, typically commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps to
simplify the assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate and air bridges.
It is available in chip form.
Typical on wafer measurement:
Conversion Gain & Image suppression
@ IF=0.9 & 1.5GHz
Main Features
.
.
.
.
.
.
.
Broadband performances: 12.0-16.0GHz
15 dB conversion gain
2dB noise figure, for IF>0.1GHz
10dBm LO input power
-10dBm RF input power (1dB gain comp.)
Low DC power consumption, 100mA@3.5V
Chip size: 2.49 X 2.13 X 0.10mm
22
20
18
16
14
12
10
8
2 LO frequency
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5
RF Frequency GHz
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min
12
Typ
Max
16
Unit
GHz
GHz
GHz
dB
FRF
FLO
FIF
RF frequency range
LO frequency range
IF frequency range
Conversion gain
5.25
DC
13
7.25
1.5
Gc
+15
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHR23911192 - 11 Jul 11
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12 -16GHz Integrated Down Converter
CHR2391
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V ,Idl=50mA, Idm=50mA
Symbol
Parameter
Min
Typ
Max
Unit
FRF
FLO
FIF
RF frequency range
12
5.25
DC
16
7.25
1.5
GHz
GHz
GHz
dB
LO frequency range
IF frequency range
Gc
Conversion gain (1)
Noise Figure, for IF>0.1GHz (1)
LO Input power
+13
+15
2
NF
PLO
2.5
dB
+10
15
+13
dBm
dBc
dBm
dBm
Img Sup Image Suppression
P1dB
IP3
Input power at 1dB gain compression
Input IP3
-10
2.5
LO VSWR Input LO VSWR (1)
RF VSWR Input RF VSWR (1)
2.0:1
2.0:1
100
Id
Bias current (2)
130
mA
(1) On Wafer measurements
(2) Current source biasing network is recommended.
Optimum performances are obtained for Idm=50mA (Id consumption of the X2+buffer; vgb-0.4V)
and Idl=50mA(Id consumption for the lna; Vga-0.4V)
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Parameter
Maximum drain bias voltage
Maximum drain bias current
Values
4.0
Unit
V
Id
180
mA
V
Vg
Gate bias voltage
-2.0 to +0.4
+5
Vdg
Pin
Maximum drain to gate voltage ( Vd – Vg)
Maximum RF peak input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
V
-5
dBm
°C
°C
°C
Tch
Ta
175
-40 to +85
-55 to +125
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : : DSCHR23911192 - 11 Jul 11
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12 -16GHz Integrated Down Converter
CHR2391
Typical On-wafer Measurements
Bias Conditions:
Vdm= Vdl= 3.5 V, Idl= Idm= 50mA( Vga=vgb-0.4V), Vgm= -0.7V, Vgx= -0.6V
Conversion gain & Image suppression with a 90° IQ combiner
22
IF= 0,9GHz
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
Infradyne Gain I
Image Rejection I
Infradyne Gain Q
-10
-12
-14
-16
Image Rejection Q
10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0
RF Frequency GHz
22
IF= 1,5GHz
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
Infradyne Gain I
Image Rejection Q
Image Rejection I
Infradyne Gain Q
-10
-12
-14
-16
10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5
RF Frequency GHz
Ref. : : DSCHR23911192 - 11 Jul 11
3/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12 -16GHz Integrated Down Converter
CHR2391
Gain compression versus RF input power
20
18
16
14
12
10
8
IF=0.9GHz
6
Conversion Gain dB
IF Output power dBm
4
2
0
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
RF Input power dBm
20
IF=1.5GHz
18
16
14
12
10
8
Conversion Gain dB
IF Output power dBm
6
4
2
0
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
RF Input power dBm
4/6 Specifications subject to change without notice
Ref. : : DSCHR23911192 - 11 Jul 11
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12 -16GHz Integrated Down Converter
CHR2391
Chip Assembly and Mechanical Data
To Vg (lna) DC Gate
To Vg (mixer) DC Gate
To
VdL (lna)
+VdM
(x +buffer)
DC Gate supply
To Vg (Buffer) DC Gate
To Vg (multiplier) DC Gate
Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is
recommended
Bonding pad positions
Chip thickness: 100µm
Unit: µm
Ref. : : DSCHR23911192 - 11 Jul 11
5/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12 -16GHz Integrated Down Converter
CHR2391
Ordering Information
Chip form
:
CHR2391-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHR23911192 - 11 Jul 11
6/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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