EC2612 [UMS]
40GHz Super Low Noise PHEMT; 40GHz的超低噪声PHEMT
| 型号： | EC2612 |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 40GHz Super Low Noise PHEMT |
| 文件： | 总8页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EC2612
40GHz Super Low Noise PHEMT
Pseudomorphic High Electron Mobility Transistor
¦ Chip size : 0.63 x 0.37 x 0.1 mm
Description
The EC2612 is based on a 0.15µm gate
pseudomorphic high electron mobility
transistor (0.15µm PHEMT) technology.
Gate width is 120µm and the 0.15µm
T-shaped aluminium gate features low
resistance and excellent reliability.
The device shows a very high
transconductance which leads to very high
frequency and low noise performances.
It is available in chip form with sources via
holes connection.Only gate and drain wires
bounding are required.
Main Features
D: Drain
G: Gate
S: Source
¦ 0.8dB minimum noise figure @ 18GHz
¦ 1.5dB minimum noise figure @ 40GHz
¦ 12dB associated gain @ 18GHz
¦ 9.5dB associated gain @ 40GHz
Main Characteristics
Tamb = +25°C
Symbol
Idss
Parameter
Saturated drain current
Min
Typ
40
Max
60
Unit
mA
dB
10
NFmin
Ga
Minimum noise figure (F=40GHz)
Associated gain (F=40GHz)
1.5
9.5
1.9
8
dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Electrical Characteristics
Tamb = +25°C
Ref. : DSEC26120077 -17-Marc-00
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
40GHz Super Low Noise PHEMT
EC2612
Test
Symbol
Parameter
Min Typ Max Unit
Conditions
Idss
Vp
Saturated drain current
Pinch off voltage
Vds = 2V
Vgs = 0V
10
35
60
mA
Vds = 2V
-1.0 -0.7 -0.3
V
Ids = 0.1mA
Gm
Igsd
Transconductance
Vds = 2V
Ids = 25mA
50
70
mS
µA
Gate to source/drain leakage
current
Vgsd = -2V
5
Dynamic characteristics
Tamb=25°C
Test
Conditions
Symbol
Parameter
Min
Typ.
0.5
1.3
1.5
14
Max
0.7
1.7
Unit
F= 12GHz
dB
NF
Minimum noise figure
F= 30GHz
F= 40GHz
Vds=2V
1.9
dB
dB
Ids=Idss/3 F= 12GHz
F= 30GHz
13
9
Ga
Associated Gain
10
F= 40GHz
8
9.5
dB
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Vds
Parameter
Drain to source voltage
Values
3.5
Units
V
V
Vgs
Gate to source voltage
-2.5
Pt
Total power dissipation
280
mW
°C
°C
Tch
Operating channel temperature
+175
Tstg
Storage temperature range
-55 to +175
(1) Operation of this device above any one of these parameters may cause permanent damage
Ref. : DSEC26120077 -17-Marc-00
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
40GHz Super Low Noise PHEMT
EC2612
Typical Scattering Parameters
Tamb = +25°C
"S" Parameters, including Lg=Ld~0.15nH
Vds = 3V, Ids = 30mA
Freq.
GHz
1
S11
dB
S11
/°
S12
dB
S12
/°
S21
dB
S21
/°
S22
dB
S22
/°
-8,8
-0,14
-0,19
-0,35
-0,62
-0,89
-1,12
-1,39
-1,70
-1,96
-2,15
-2,34
-2,47
-2,62
-2,78
-2,91
-3,00
-3,05
-3,08
-3,13
-3,17
-3,24
-3,26
-3,30
-3,27
-3,26
-3,20
-3,17
-3,15
-3,19
-3,15
-3,10
-3,03
-2,99
-2,98
-2,97
-2,89
-2,85
-2,83
-2,82
-2,83
-11,0
-21,6
-32,3
-42,5
-52,5
-62,2
-71,9
-80,5
-88,2
-95,9
-104,1
-111,8
-118,7
-125,5
-132,8
-138,8
-144,2
-150,1
-156,5
-161,6
-166,5
-171,9
-176,7
179,3
175,8
172,0
167,4
163,5
159,2
155,1
151,2
147,7
144,1
139,8
136,5
132,3
128,2
124,9
121,6
116,9
-34,26
-28,41
-25,12
-22,92
-21,36
-20,14
-19,30
-18,69
-18,10
-17,61
-17,23
-16,88
-16,56
-16,35
-16,23
-16,11
-15,89
-15,79
-15,82
-15,77
-15,80
-15,90
-16,00
-15,96
-16,06
-16,12
-16,14
-16,16
-16,36
-16,39
-16,29
-16,37
-16,54
-16,62
-16,74
-16,88
-16,84
-16,86
-17,04
-17,11
81,5
76,1
70,0
64,0
58,1
52,2
46,4
42,0
38,0
33,5
29,4
25,8
22,1
18,7
15,4
12,9
10,0
6,7
15,88
15,69
15,48
15,20
14,87
14,53
14,16
13,74
13,34
12,96
12,57
12,23
11,83
11,40
11,02
10,60
10,24
9,86
9,49
9,14
8,75
8,40
8,02
7,68
7,39
7,12
6,86
6,62
6,28
5,98
5,70
5,40
5,12
4,89
4,68
4,51
4,24
4,04
3,84
3,47
169,7
162,2
154,5
146,7
139,3
132,3
125,7
119,5
113,9
108,3
103,0
97,6
92,4
87,4
82,5
78,1
73,7
69,5
65,2
61,2
57,2
53,3
50,0
46,8
43,6
40,4
37,1
33,4
29,7
26,5
23,1
19,5
16,7
13,4
10,1
6,4
-4,78
-4,89
-5,11
-5,39
-5,80
-6,19
-6,67
-7,07
-7,38
-7,69
-8,04
-8,30
-8,55
-8,85
-9,03
-9,20
-9,29
-9,28
-9,34
-9,38
-9,45
-9,47
-9,50
-9,43
-9,31
-9,20
-9,13
-9,06
-8,95
-8,81
-8,67
-8,59
-8,45
-8,38
-8,34
-8,26
-8,10
-7,89
-7,77
-7,71
2
3
4
5
6
7
8
9
-18,3
-27,2
-36,0
-44,4
-53,5
-61,5
-68,5
-75,6
-83,2
-90,1
-96,9
-104,7
-111,9
-118,3
-123,8
-130,8
-137,3
-143,2
-148,9
-155,9
-160,6
-164,8
-169,2
-174,6
-177,9
177,8
173,5
168,4
166,0
161,3
155,5
152,7
150,0
145,6
141,4
138,3
133,7
129,7
127,3
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
4,1
1,5
-2,0
-4,8
-6,9
-9,8
-12,6
-14,9
-17,2
-20,0
-22,2
-23,1
-24,9
-27,5
-28,8
-30,6
-32,6
-34,5
-36,4
-39,7
-43,4
-46,0
3,0
-0,7
-4,4
-8,6
Tamb = +25°C
Ref. : DSEC26120077 -17-Marc-00
3/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
40GHz Super Low Noise PHEMT
EC2612
"S" Parameters, including Lg=Ld~0.15nH
Vds = 2V, Ids = 10mA
Freq.
GHz
1
S11
dB
-0,11
S11
/°
-10,5
-20,7
-29,8
-38,4
-47,7
-56,5
-65,7
-73,9
S12
dB
S12
/°
S21
dB
S21
/°
S22
dB
-4,76
S22
/°
-7,4
-16,4
-24,5
-32,6
-40,5
-49,0
-56,6
-63,3
-70,0
-77,4
-84,0
-90,6
-98,0
-105,2
-111,6
-117,1
-124,0
-130,5
-136,3
-141,9
-149,1
-154,0
-158,4
-162,8
-168,4
-171,9
-176,3
179,2
174,0
171,5
166,5
160,6
157,5
154,9
151,3
146,8
143,3
138,6
133,6
131,3
-33,67
-27,77
-24,45
-22,20
-20,57
-19,27
-18,36
-17,68
-17,04
-16,49
-16,08
-15,69
-15,33
-15,09
-14,94
-14,82
-14,57
-14,47
-14,48
-14,41
-14,41
-14,50
-14,60
-14,56
-14,65
-14,71
-14,72
-14,74
-14,93
-15,00
-14,93
-15,01
-15,21
-15,27
-15,31
-15,48
-15,49
-15,53
-15,77
-15,86
82,3
13,52
13,38
13,22
13,01
12,74
12,48
12,19
11,85
11,51
11,19
10,85
10,56
10,22
9,82
9,49
9,12
8,78
8,43
8,08
7,76
7,40
7,07
6,72
6,38
6,10
5,83
5,57
5,34
5,03
4,73
4,47
4,18
3,91
3,69
3,49
3,33
3,07
2,89
2,67
2,33
170,6
163,7
156,4
149,0
141,8
135,0
128,5
122,4
116,7
111,0
105,6
100,1
94,7
89,6
84,5
79,9
75,2
70,9
66,4
62,2
58,0
54,0
50,4
47,1
43,6
40,3
36,8
33,1
29,3
26,0
22,4
18,6
15,8
12,3
9,0
2
3
4
5
6
7
8
9
-0,26
-0,45
-0,66
-0,85
-1,03
-1,20
-1,41
-1,64
-1,85
-2,04
-2,19
-2,35
-2,51
-2,66
-2,78
-2,86
-2,92
-3,00
-3,08
-3,15
-3,20
-3,23
-3,25
-3,26
-3,27
-3,27
-3,26
-3,25
-3,21
-3,18
-3,13
-3,09
-3,07
-3,03
-3,00
-2,98
-2,97
-2,94
-2,93
77,0
71,2
65,4
59,6
53,7
47,9
43,3
39,2
34,5
30,1
26,3
22,3
18,5
14,9
12,0
8,9
-4,81
-4,99
-5,21
-5,56
-5,88
-6,29
-6,65
-6,91
-7,19
-7,53
-7,78
-8,03
-8,34
-8,49
-8,67
-8,82
-8,91
-9,02
-9,07
-9,18
-9,27
-9,29
-9,27
-9,22
-9,16
-9,08
-9,05
-8,91
-8,80
-8,67
-8,58
-8,49
-8,39
-8,30
-8,20
-8,08
-7,95
-7,86
-7,78
-81,2
-88,7
-96,7
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
-104,2
-111,0
-117,8
-125,3
-131,4
-136,9
-142,9
-149,4
-154,6
-159,8
-165,3
-170,4
-174,7
-178,3
177,7
173,0
169,0
164,6
160,2
156,1
152,5
148,6
144,3
140,9
136,6
132,1
128,6
125,3
120,6
5,3
2,3
-0,5
-4,3
-7,5
-9,8
-12,9
-16,0
-18,5
-21,1
-24,0
-26,6
-27,9
-30,1
-33,0
-34,6
-36,7
-39,8
-42,0
-44,1
-47,7
-50,7
-53,4
5,2
1,7
-2,2
-6,0
-10,2
Ref. : DSEC26120077 -17-Marc-00
4/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
40GHz Super Low Noise PHEMT
EC2612
Typical results
Tamb = +25°C
Ids vs Vds (Vgs=-0.2V/Step)
70
60
50
40
30
20
10
0
Vgs=0.4V
0
0,5
1
1,5
2
2,5
3
3,5
Vds (V)
Nf and Associated Gain Vs Ids (F=12GHz)
1,00
16
15
14
13
12
11
10
0,90
0,80
0,70
0,60
0,50
0,40
4
9
14
19
24
29
34
39
Ids (mA)
Vds = 2V
NF and Associated Gain vs Ids (F=40GHz)
2,40
2,20
2,00
1,80
1,60
1,40
1,20
10
9,5
9
8,5
8
7,5
7
0
5
10
15
20
25
30
35
40
Ids (mA)
Vds=2V
Ref. : DSEC26120077 -17-Marc-00
5/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
40GHz Super Low Noise PHEMT
EC2612
NF and Associated Gain vs F (Ids=Idss/3)
1,60
1,40
1,20
1,00
0,80
0,60
0,40
26
23
20
17
14
11
8
0,20
5
5
10
15
20
25
30
35
40
Frequency (GHz)
Vds=2V
F=12GHz
16,00
15,00
14,00
13,00
12,00
11,00
10,00
50,
40,
30,
20,
10,
0,
0,0
2,0
4,0
6,0
8,0
10,0
12,0
14,0
16,0
18,0
Pout (dBm)
Vds = 3V, Ids = 31mA
Ref. : DSEC26120077 -17-Marc-00
6/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
40GHz Super Low Noise PHEMT
EC2612
(CHIP) Equivalent Circuit model (Drain and Gate bond wires included)
Parameter
Lg
Unit
pH
Ohms
fF
Ohms
fF
Ohms
pH
Value
152.54
0.13
142.6
3.2
39.57
2.83
0.11
Lg
Rg
C g d
Vgs
Rd
Ld
G
D
Rg
Cgs
Ri
Cgd
Rs
Ls
Cgs
Ri
Ta u
Gm
Rd s
Cds
Rs
Gm
Tau
Cds
Rds
Rd
mS
ps
fF
Ohms
Ohms
pH
98.14
2.8
46.84
116.8
2.83
Ls
S
backside of substrate
Ld
117.01
Typical Noise Parameters at Vds=2V, Ids=14mA
(Drain and Gate bond wires included)
FREQUENCY
MHz
NF min
dB
0.26
0.356
0.492
0.595
0.762
0.892
1.01
Rn
Γopt
MOD.
Ang.(°)
19.888
32.28
49.899
64.263
5000
8000
0.811
0.746
0.658
0.598
0.514
0.473
0.460
0.465
0.475
0.5
14.089
13.33
11.87
10.51
7.965
5.923
4.16
3.473
2.966
2.63
12000
15000
20000
24000
28000
30000
32000
35000
38000
40000
42000
45000
91.037
114.916
139.673
151.723
163.219
179.087
-166.857
-158.467
-150.795
-140.488
1.07
1.137
1.223
1.307
1.362
1.415
1.493
0.533
0.556
0.581
0.618
2.923
3.538
4.536
6.843
Ref. : DSEC26120077 -17-Marc-00
7/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
40GHz Super Low Noise PHEMT
EC2612
Chip Mechanical Data
Drain area= 60*60 µm
Gate area = 60*60 µm
Thickness = 100 µm
Recommended die attach :
Stage temperature = 300°C
(minimize temp. and time whenever
possible)
Preforms = Au/Sn (80/20)
Atmosphere : dry nitrogen or forming
gas flow
Recommended bonding :
18 µm very pure gold wire
(thermal compression)
The bonder should be properly
grounded
dimensions in µm
Source pads are directly connected to
back face metallization through the via
holes
Ordering Information
Chip form
: EC2612-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSEC26120077 -17-Marc-00
8/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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SI9122E
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