UD3010 [UNITPOWER]
N-Ch 30V Fast Switching MOSFETs; N-CH 30V的快速开关MOSFET
| 型号： | UD3010 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | N-Ch 30V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：716K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UD3010
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UD3010 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
RDS(ON)
BVDSS
ID
30V
45mΩ
15A
Applications
The UD3010 meet the RoHS and Green Product
requirement with full function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
TO252 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
30
Units
V
Drain-Source Voltage
VGS
Gate-Source Voltage
±20
15
V
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
A
9.5
A
5.4
A
4.3
A
30
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation3
Total Power Dissipation3
15.6
2
W
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
62
Unit
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
RθJC
---
8
1
UD3010
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=250uA
Min.
30
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=1mA
VGS=10V , ID=10A
0.016
38
---
V/℃
45
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=4.5V , ID=5A
56
70
VGS(th)
Gate Threshold Voltage
1.5
-3.04
---
2.5
V
VGS=VDS , ID =250uA
△VGS(th)
V
GS(th) Temperature Coefficient
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
VDS=24V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
---
5
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
±100
---
nA
S
VDS=5V , ID=10A
6.7
2.3
2.65
1.08
1.06
1.0
13.8
7.2
3.6
220
38
Rg
VDS=0V , VGS=0V , f=1MHz
4.6
Ω
Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
3.71
1.51
1.48
2.0
VDS=15V , VGS=4.5V , ID=10A
nC
ns
Qgs
Qgd
Td(on)
Tr
VDD=15V , VGS=10V , RG=3.3Ω
24.8
14.4
7.2
ID=10A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Input Capacitance
308.0
53.2
44.8
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
32
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
15
30
1
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
A
VGS=0V , IS=1A , TJ=25℃
---
---
V
---
4.2
0.83
---
nS
nC
IF=10A , dI/dt=100A/µs , TJ=25℃
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD3010
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
80.0
70.0
60.0
50.0
40.0
ID=10A
2
4
6
8
10
VGS (V)
Fig.2 On-Resistance vs. G-S Voltage
Fig.1 Typical Output Characteristics
10
8
6
T =150
T =25
℃
℃
J
J
4
2
0
0
0.3
0.6
0.9
1.2
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
1.5
2.0
1.5
1.0
0.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
)
℃
J
T , Junction Temperature (
J
)
℃
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
UD3010
N-Ch 30V Fast Switching MOSFETs
1000
100
10
100.00
10.00
1.00
F=1.0MHz
10us
100us
Ciss
10ms
100ms
DC
Coss
Crss
0.10
T =25
℃
C
Single Pulse
0.01
0.1
1
10
100
1
5
9
13
17
21
25
VDS Drain to Source Voltage(V)
VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
SINGLE PULSE
TON
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
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