UD6004 [UNITPOWER]
N-Ch 60V Fast Switching MOSFETs; N-CH 60V的快速开关MOSFET型号: | UD6004 |
厂家: | ShenZhen XinDeYi Electronics Co., Ltd. |
描述: | N-Ch 60V Fast Switching MOSFETs |
文件: | 总4页 (文件大小:839K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UD6004
N-Ch 60V Fast Switching MOSFETs
General Description
Product Summery
The UD6004 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
ID
S(ON)
BVDSS
RD
60V
30mΩ
25A
Applications
The UD6004 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter.
z Networking DC-DC Power System
z Load Switch
Features
TO252 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
VDS
Drain-Source Voltage
VGS
ID@TC=25℃
ID@TC=100℃
IDM
Gate-Source Voltage
±20
25
V
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
A
18
A
50
A
EAS
Single Pulse Avalanche Energy3
34.5
mJ
A
IAS
Avalanche Current
22.6
PD@TC=25℃
TSTG
Total Power Dissipation4
34.7
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
62
Unit
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
RθJC
---
3.6
1
UD6004
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=250uA
Min.
60
---
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=1mA
VGS=10V , ID=15A
0.063
25
---
V/℃
30
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=4.5V , ID=10A
30
38
VGS(th)
Gate Threshold Voltage
2.5
---
V
VGS=VDS , ID =250uA
△VGS(th)
V
GS(th) Temperature Coefficient
-5.24
---
mV/℃
VDS=48V , VGS=0V , TJ=25℃
VDS=48V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
---
5
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
±100
---
nA
S
VDS=5V , ID=15A
17
Rg
VDS=0V , VGS=0V , f=1MHz
3.2
Ω
Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
12.56
3.24
6.31
8
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---
---
---
---
---
---
---
---
---
VDS=48V , VGS=4.5V , ID=10A
nC
ns
Qgs
Qgd
Td(on)
Tr
VDD=30V , VGS=10V , RG=3.3Ω,
14.2
24.4
4.6
ID=10A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Input Capacitance
1345
72.5
54.4
VDS=25V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
15.2
---
---
mJ
VDD=25V , L=0.1mH , IAS=15A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
25
Unit
A
IS
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
VG=VD=0V , Force Current
ISM
VSD
---
---
50
A
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=15A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD6004
N-Ch 60V Fast Switching MOSFETs
Typical Characteristics
35
33
30
28
25
12
ID=12A
VGS=10V
10
VGS=7
VGS=5V
8
VGS=4.5V
VGS=3V
6
4
2
0
0
0.5
1
1.5
2
2
4
6
8
10
VDS , Drain-to-Source Voltage (V)
VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
10
ID=12A
8
6
4
2
0
6
T =150
T =25
℃
J
℃
J
4
2
0
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1
VSD , Source-to-Drain Voltage (V)
QG , Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.5
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
)
150
T ,Junction Temperature (
℃
T , Junction Temperature (
J
)
℃
J
Fig.5 Normalized VGS(th) v.s TJ
Fig.6 Normalized RDSON v.s TJ
3
UD6004
N-Ch 60V Fast Switching MOSFETs
10000
1000
100
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
1ms
10ms
100m
DC
Coss
Crss
0.10
Tc=25oC
Single Pulse
0.01
10
0.1
1
10
VDS (V)
100
1000
1
5
9
13
17
21
25
VDS Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.3
0.1
0.1
0.05
0.02
PDM
TON
T
0.01
D = TON/T
SINGLE PULSE
TJpeak = TC + PDM x RθJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4
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