UD6004 [UNITPOWER]

N-Ch 60V Fast Switching MOSFETs; N-CH 60V的快速开关MOSFET
UD6004
型号: UD6004
厂家: ShenZhen XinDeYi Electronics Co., Ltd.    ShenZhen XinDeYi Electronics Co., Ltd.
描述:

N-Ch 60V Fast Switching MOSFETs
N-CH 60V的快速开关MOSFET

开关
文件: 总4页 (文件大小:839K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UD6004  
N-Ch 60V Fast Switching MOSFETs  
General Description  
Product Summery  
The UD6004 is the highest performance trench  
N-ch MOSFETs with extreme high cell density ,  
which provide excellent RDSON and gate charge  
for most of the synchronous buck converter  
applications .  
ID  
S(ON)  
BVDSS  
RD  
60V  
30m  
25A  
Applications  
The UD6004 meet the RoHS and Green Product  
requirement , 100% EAS guaranteed with full  
function reliability approved.  
z High Frequency Point-of-Load Synchronous  
Buck Converter.  
z Networking DC-DC Power System  
z Load Switch  
Features  
TO252 Pin Configuration  
z Advanced high cell density Trench technology  
z Super Low Gate Charge  
z Excellent CdV/dt effect decline  
z 100% EAS Guaranteed  
z Green Device Available  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
Drain-Source Voltage  
VGS  
ID@TC=25℃  
ID@TC=100℃  
IDM  
Gate-Source Voltage  
±20  
25  
V
Continuous Drain Current, VGS @ 10V1  
Continuous Drain Current, VGS @ 10V1  
Pulsed Drain Current2  
A
18  
A
50  
A
EAS  
Single Pulse Avalanche Energy3  
34.5  
mJ  
A
IAS  
Avalanche Current  
22.6  
PD@TC=25℃  
TSTG  
Total Power Dissipation4  
34.7  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
RθJA  
Parameter  
Typ.  
---  
Max.  
62  
Unit  
/W  
/W  
Thermal Resistance Junction-Ambient 1  
Thermal Resistance Junction-Case1  
RθJC  
---  
3.6  
1
UD6004  
N-Ch 60V Fast Switching MOSFETs  
Electrical Characteristics (TJ=25 , unless otherwise noted)  
Symbol  
Parameter  
Conditions  
VGS=0V , ID=250uA  
Min.  
60  
---  
---  
---  
1.2  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
Typ.  
---  
Max.  
---  
Unit  
V
BVDSS  
Drain-Source Breakdown Voltage  
BVDSS Temperature Coefficient  
BVDSS/△TJ  
Reference to 25, ID=1mA  
VGS=10V , ID=15A  
0.063  
25  
---  
V/℃  
30  
RDS(ON)  
Static Drain-Source On-Resistance2  
mΩ  
VGS=4.5V , ID=10A  
30  
38  
VGS(th)  
Gate Threshold Voltage  
2.5  
---  
V
VGS=VDS , ID =250uA  
VGS(th)  
V
GS(th) Temperature Coefficient  
-5.24  
---  
mV/℃  
VDS=48V , VGS=0V , TJ=25℃  
VDS=48V , VGS=0V , TJ=55℃  
1
IDSS  
Drain-Source Leakage Current  
uA  
---  
5
VGS=±20V , VDS=0V  
IGSS  
gfs  
Gate-Source Leakage Current  
Forward Transconductance  
Gate Resistance  
---  
±100  
---  
nA  
S
VDS=5V , ID=15A  
17  
Rg  
VDS=0V , VGS=0V , f=1MHz  
3.2  
Ω
Qg  
Total Gate Charge (4.5V)  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
12.56  
3.24  
6.31  
8
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
VDS=48V , VGS=4.5V , ID=10A  
nC  
ns  
Qgs  
Qgd  
Td(on)  
Tr  
VDD=30V , VGS=10V , RG=3.3Ω,  
14.2  
24.4  
4.6  
ID=10A  
Td(off)  
Tf  
Turn-Off Delay Time  
Fall Time  
Ciss  
Coss  
Crss  
Input Capacitance  
1345  
72.5  
54.4  
VDS=25V , VGS=0V , f=1MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Guaranteed Avalanche Characteristics  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
EAS  
Single Pulse Avalanche Energy5  
15.2  
---  
---  
mJ  
VDD=25V , L=0.1mH , IAS=15A  
Diode Characteristics  
Symbol  
Parameter  
Conditions  
Min.  
---  
Typ.  
---  
Max.  
25  
Unit  
A
IS  
Continuous Source Current1,6  
Pulsed Source Current2,6  
Diode Forward Voltage2  
VG=VD=0V , Force Current  
ISM  
VSD  
---  
---  
50  
A
VGS=0V , IS=1A , TJ=25℃  
---  
---  
1.2  
V
Note :  
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.  
2.The data tested by pulsed , pulse width 300us , duty cycle 2%  
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=15A  
4.The power dissipation is limited by 150junction temperature  
5.The Min. value is 100% EAS tested guarantee.  
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.  
2
UD6004  
N-Ch 60V Fast Switching MOSFETs  
Typical Characteristics  
35  
33  
30  
28  
25  
12  
ID=12A  
VGS=10V  
10  
VGS=7  
VGS=5V  
8
VGS=4.5V  
VGS=3V  
6
4
2
0
0
0.5  
1
1.5  
2
2
4
6
8
10  
VDS , Drain-to-Source Voltage (V)  
VGS (V)  
Fig.1 Typical Output Characteristics  
Fig.2 On-Resistance v.s Gate-Source  
12  
10  
8
10  
ID=12A  
8
6
4
2
0
6
T =150  
T =25  
J
J
4
2
0
0
5
10  
15  
20  
25  
0.2  
0.4  
0.6  
0.8  
1
VSD , Source-to-Drain Voltage (V)  
QG , Total Gate Charge (nC)  
Fig.3 Forward Characteristics of Reverse  
Fig.4 Gate-Charge Characteristics  
2.5  
2.0  
1.5  
1.0  
0.5  
1.5  
1
0.5  
0
-50  
0
50  
100  
150  
-50  
0
50  
100  
)
150  
T ,Junction Temperature (  
T , Junction Temperature (  
J
)
J
Fig.5 Normalized VGS(th) v.s TJ  
Fig.6 Normalized RDSON v.s TJ  
3
UD6004  
N-Ch 60V Fast Switching MOSFETs  
10000  
1000  
100  
100.00  
10.00  
1.00  
F=1.0MHz  
Ciss  
100us  
1ms  
10ms  
100m  
DC  
Coss  
Crss  
0.10  
Tc=25oC  
Single Pulse  
0.01  
10  
0.1  
1
10  
VDS (V)  
100  
1000  
1
5
9
13  
17  
21  
25  
VDS Drain to Source Voltage(V)  
Fig.7 Capacitance  
Fig.8 Safe Operating Area  
1
DUTY=0.5  
0.3  
0.1  
0.1  
0.05  
0.02  
PDM  
TON  
T
0.01  
D = TON/T  
SINGLE PULSE  
TJpeak = TC + PDM x RθJC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Pulse Width (s)  
Fig.9 Normalized Maximum Transient Thermal Impedance  
Fig.10 Switching Time Waveform  
Fig.11 Unclamped Inductive Waveform  
4

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