UD6006 [UNITPOWER]
N-Ch 60V Fast Switching MOSFETs; N-CH 60V的快速开关MOSFET
| 型号： | UD6006 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | N-Ch 60V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：677K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UD6006
N-Ch 60V Fast Switching MOSFETs
General Description
Product Summery
The UD6006 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
ID
BVDSS
RDS(ON)
60V
18mΩ
35A
Applications
The UD6006 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z LCD/LED back light
Features
TO252 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
Units
V
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
35
A
22
A
7.4
A
6
A
80
A
EAS
Single Pulse Avalanche Energy3
67
mJ
A
IAS
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
28
45
PD@TC=25℃
PD@TA=25℃
TSTG
W
W
℃
℃
2
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
62
Unit
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
RθJC
---
2.8
1
UD6006
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=250uA
Min.
60
---
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=1mA
VGS=10V , ID=20A
0.057
14
---
V/℃
18
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=4.5V , ID=10A
16
20
VGS(th)
Gate Threshold Voltage
---
2.5
---
V
VGS=VDS , ID =250uA
△VGS(th)
V
GS(th) Temperature Coefficient
-5.68
---
mV/℃
VDS=48V , VGS=0V , TJ=25℃
VDS=48V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
---
5
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
±100
---
nA
S
VDS=5V , ID=15A
45
Rg
VDS=0V , VGS=0V , f=1MHz
1.7
19.3
7.1
7.6
7.2
50
3.4
27
Ω
Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
VDS=48V , VGS=4.5V , ID=15A
nC
ns
Qgs
Qgd
Td(on)
Tr
10
10.6
14.4
90
VDD=30V , VGS=10V , RG=3.3Ω,
ID=15A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
36.4
7.6
2423
145
97
73
15.2
3392
203
136
Ciss
Coss
Crss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
19
---
---
mJ
VDD=25V , L=0.1mH , IAS=15A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
35
80
1
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
A
VGS=0V , IS=A , TJ=25℃
---
---
V
---
16.3
11
---
nS
nC
IF=15A , dI/dt=100A/µs , TJ=25℃
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD6006
N-Ch 60V Fast Switching MOSFETs
Typical Characteristics
20
19
18
17
16
15
ID=12A
4
6
8
10
VGS (V)
Fig.2 On-Resistance v.s Gate-Source
Fig.1 Typical Output Characteristics
12
10
8
6
T =150
T =25
℃
J
℃
J
4
2
0
0.2
0.4
0.6
0.8
1
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
)
T , Junction Temperature ( )
℃
J
℃
J
Fig.5 Normalized VGS(th) v.s TJ
Fig.6 Normalized RDSON v.s TJ
3
UD6006
N-Ch 60V Fast Switching MOSFETs
10000
1000
100
F=1.0MHz
Ciss
Coss
Crss
10
1
5
9
13
17
21
25
VDS Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.3
0.1
0.1
0.05
0.02
PDM
TON
T
0.01
D = TON/T
SINGLE PULSE
TJpeak = TC + PDM x RθJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.11 Unclamped Inductive Switching Waveform
Fig.10 Switching Time Waveform
4
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