UM3015 [UNITPOWER]
P-Ch 30V Fast Switching MOSFETs; P沟道30V的快速开关MOSFET
| 型号： | UM3015 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | P-Ch 30V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：484K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Unitpower
UM3015
P-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UM3015 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
BVDSS
RDSON
ID
-30V
10.5mꢁ
-10A
Applications
The UM3015 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
ꢀ High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
ꢀ Networking DC-DC Power System
ꢀ Load Switch
function reliability approved.
Features
SOP8 Pin Configuration
ꢀ Advanced high cell density Trench technology
ꢀ Super Low Gate Charge
ꢀ Excellent CdV/dt effect decline
ꢀ 100% EAS Guaranteed
ꢀ Green Device Available
S O-8
1
Absolute Maximum Ratings
Symbol
Parameter
Rating
-30
Units
V
VDS
VGS
Drain-Source Voltageꢀ
Gate-Souꢁce Voltage
ꢀ20ꢀ
-10
V
ID@TA=25ꢁ
ID@TA=70ꢁ
IDM
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
PulsedꢀDrain Current2
A
-8
A
-40
A
EAS
Single Pulse Avalanche Energy3
408
mJ
A
IAS
Avalanche Current
Total Power Dissipation4
-55.4
1.5
PD@TA=25ꢁ
TSTG
W
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
ꢁꢂ
ꢁꢂ
TJ
Thermal Data
Symbol
RꢀJA
Parameter
ꢀ Typ.
---
Max.
85
Unit
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
ꢁ/Wꢀ
ꢁ/Wꢀ
RꢀJC
---
24
Rev A.04 D072011
1
Unitpower
UM3015
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25ꢂꢁ, unless otherwise noted)
Symbol
Parameter
ꢀ Conditions
VGS=0V , ID=-250uA
Min.
-30
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
ꢁBVDSSꢂꢁTJ
Reference to 25ꢁꢀ, ID=-1mA
VGS=-10V , ID=-10A
-0.018
8
---
V/ꢁ
---
10.5
18.5
-2.5
---
RDS(ON)
Static Drain-Source On-Resistance2
mꢀꢂ
VGS=-4.5V , ID=-8A
---
14
VGS(th)
Gate Threshold Voltage
-1.2
---
-1.6
5.04
---
V
VGS=VDS , ID =-250uA
ꢁVGS(th)
V
GS(th) Temperature Coefficient
mV/ꢁ
VDS=-24V , VGS=0V , TJ=25ꢁ
VDS=-24V , VGS=0V , TJ=55ꢁ
---
-1
IDSS
Drain-Source Leakage Current
uA
---
---
-5
V
GSꢃꢀ20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
---
---
ꢀ100
---
nA
S
VDS=-5V , ID=-10A
---
25
Qg
---
30
42
VDS=-15V , VGS=-4.5V , ID=-10A
nC
Qgs
Qgd
Td(on)
Tr
---
10
14
---
10.4
9.4
10.2
117
24
14.6
19
Turn-On Delay Time
Rise Time
---
VDD=-15V , VGS=-10V , RG=3.3ꢀ,
---
18
ns
ID=-10A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
234
48
---
Ciss
Coss
Crss
Input Capacitance
---
3448
508
421
4827
711
589
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
Guaranteed Avalanche Characteristics
Symbol
Parameter
ꢀ Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
120
---
---
mJ
VDD=-25V , L=0.1mH , IAS=-30A
Diode Characteristics
Symbol
Parameter
ꢀ Conditions
Min.
---
Typ.
---
Max.
-10
-40
-1.2
---
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
A
VGS=0V , IS=-1A , TJ=25ꢁ
IF=-10A , dI/dt=100A/µs ,
TJ=25ꢁ
---
---
V
---
19.4
9.1
nS
nC
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ꢂ 300us , duty cycle ꢂ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-55.4A
4.The power dissipation is limited by 150ꢁ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
Unitpower
UM3015
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
14
12
10
8
40
35
ID=-10A
30
25
20
15
10
5
VGS=-10V
VGS=-7V
VGS=-5V
VGS=-4.5V
VGS=-3V
0
6
0
1
2
3
4
2
4
6
8
10
-VDS , Drain-to-Source Voltage (V)
-VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
6
T =150
T =25
ꢄ
ꢄ
J
J
4
2
0
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
2.0
1.5
1.5
1.0
0.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
J
)
ꢀ
T , Junction Temperature ( )
ꢀ
J
Fig.6 Normalized RDSON vs. TJ
Fig.5 Normalized VGS(th) vs. TJ
3
Unitpower
UM3015
P-Ch 30V Fast Switching MOSFETs
10000
1000
100
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
1ms
Coss
Crss
10ms
100ms
0.10
DC
TA=25oC
Single Pulse
0.01
10
0.01
0.1
1
10
100
1
1
5
9
13
17
21
25
-VDS , Drain to Source Voltage(V)
-VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.01
PDM
TON
T
D = TON/T
SINGLE
TJpeak = TC+PDMXRꢀJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.11 Unclamped Inductive Switching Waveform
Fig.10 Switching Time Waveform
4
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