US2410 [UNITPOWER]
N-Ch 20V Fast Switching MOSFETs; N-CH 20V的快速开关MOSFET
| 型号： | US2410 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | N-Ch 20V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：747K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US2410
N-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The US2410 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
BVDSS
RDS(ON)
ID
20V
37mΩ
4.2A
Applications
The US2410 meet the RoHS and Green Product
requirement with full function reliability approved.
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
SOT23 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
20
Units
V
Drain-Source Voltage
VGS
Gate-Source Voltage
±12
4.2
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 4.5V1
Continuous Drain Current, VGS @ 4.5V1
Pulsed Drain Current2
A
3.3
A
17
A
PD@TA=25℃
TSTG
Total Power Dissipation3
1
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
125
80
Unit
℃/W
℃/W
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
RθJC
---
1
US2410
N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=250uA
Min.
20
---
---
---
0.5
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=1mA
VGS=4.5V , ID=4A
0.018
30
---
V/℃
37
45
1.2
---
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=2.5V , ID=3A
36
VGS(th)
Gate Threshold Voltage
0.7
-3.1
---
V
VGS=VDS , ID =250uA
△VGS(th)
V
GS(th) Temperature Coefficient
mV/℃
VDS=16V , VGS=0V , TJ=25℃
VDS=16V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
---
5
VGS=±12V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
±100
---
nA
S
VDS=5V , ID=4A
20
Rg
VDS=0V , VGS=0V , f=1MHz
1.5
8.6
1.37
2.3
5.2
34
3
Ω
Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
12.0
1.9
3.2
10.4
61
VDS=15V , VGS=4.5V , ID=4A
nC
ns
Qgs
Qgd
Td(on)
Tr
VDS=10V , VGS=4.5V , RG=3.3Ω
ID=4A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
23
46
9.2
635
70
18.4
889
98
Ciss
Coss
Crss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
63
88
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
4.2
17
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
A
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
---
V
---
7.5
2.1
nS
nC
IF=4A , dI/dt=100A/µs , TJ=25℃
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
US2410
N-Ch 20V Fast Switching MOSFETs
Typical Characteristics
45
40
35
30
25
20
18
ID=4A
VGS=5V
VGS=4.5V
16
14
12
10
8
VGS=3V
VGS=2.5V
VGS=1.8V
6
4
2
0
1
3
5
7
9
11
0
0.5
1
1.5
2
VDS , Drain-to-Source Voltage (V)
VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
6
4
2
0
T =175
T =25
℃
J
℃
J
0
0.3
0.6
0.9
1.2
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
)
T , Junction Temperature (
)
℃
℃
J
J
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
US2410
N-Ch 20V Fast Switching MOSFETs
1000
100
10
100.00
10.00
1.00
Ciss
100us
10ms
Coss
Crss
100ms
1s
0.10
DC
T =25
℃
A
F=1.0MHz
Single Pulse
0.01
1
4
7
10
13
16
19
22
0.1
1
10
100
VDS Drain to Source Voltage (V)
VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
TON
0.001 SINGLE PULSE
T
D = TON/T
TJpeak = TA + PDM x RθJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
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