US2421 [UNITPOWER]
P-Ch 20V Fast Switching MOSFETs; P沟道20V的快速开关MOSFET
| 型号： | US2421 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | P-Ch 20V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：459K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Unitpower
US2421
P-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The US2421 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
BVDSS
RDSON
ID
-20V
43mꢁ
-4A
Applications
The US2421 meet the RoHS and Green Product
requirement with full function reliability approved.
ꢀ High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
ꢀ Networking DC-DC Power System
ꢀ Load Switch
Features
SOT23 Pin Configuration
ꢀ Advanced high cell density Trench technology
ꢀ Super Low Gate Charge
D
ꢀ Excellent Cdv/dt effect decline
ꢀ Green Device Available
S
G
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
-20
Units
V
Drain-Source Voltageꢀ
VGS
Gate-Souꢁce Voltage
ꢀ12ꢀ
-4
V
ID@TA=25ꢁ
ID@TA=70ꢁ
IDM
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
PulsedꢀDrain Current2
A
-3.2
A
-20
A
PD@TA=25ꢁ
TSTG
Total Power Dissipation3
1
W
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
ꢁꢂ
ꢁꢂ
TJ
Thermal Data
Symbol
RꢀJA
Parameter
ꢀ Typ.
---
Max.
125
80
Unit
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
ꢁ/Wꢀ
ꢁ/Wꢀ
RꢀJC
---
1
Unitpower
US2421
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25ꢂꢁ, unless otherwise noted)
Symbol
Parameter
ꢀ Conditions
VGS=0V , ID=-250uA
Min.
-20
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
ꢁBVDSSꢂꢁTJ
Reference to 25ꢁꢀ, ID=-1mA
VGS=-4.5V , ID=-4A
-0.01
34
---
V/ꢁ
---
43
RDS(ON)
Static Drain-Source On-Resistance2
mꢀꢂ
VGS=-2.5V , ID=-1.5A
---
42
52
VGS(th)
Gate Threshold Voltage
-0.5
---
-0.7
2.7
---
-1.2
---
V
VGS=VDS , ID =-250uA
ꢁVGS(th)
VGS(th) Temperature Coefficient
mV/ꢁ
VDS=-16V , VGS=0V , TJ=25ꢁ
VDS=-16V , VGS=0V , TJ=55ꢁ
---
-1
IDSS
Drain-Source Leakage Current
uA
---
---
-5
V
GSꢃꢀ12V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
---
---
ꢀ100
---
nA
S
VDS=-5V , ID=-4A
---
18.7
17.8
2.6
4.3
8
Qg
---
25
VDS=-15V , VGS=-4.5V , ID=-4A
nC
Qgs
Qgd
Td(on)
Tr
---
3.6
6
---
Turn-On Delay Time
Rise Time
---
16
VDD=-10V , VGS=-4.5V , RG=1.2ꢀ
---
11
20
ns
ID=-4A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
79
158
30
---
15
Ciss
Coss
Crss
Input Capacitance
---
1440
165
145
2016
230
203
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
Diode Characteristics
Symbol
Parameter
ꢀ Conditions
Min.
---
Typ.
---
Max.
-4
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
-20
-1
A
VGS=0V , IS=-1A , TJ=25ꢁ
---
---
V
---
10.7
4.1
---
nS
nC
IF=-4A , dI/dt=100A/µs , TJ=25ꢁ
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ꢂ 300us , duty cycle ꢂ 2%
3.The power dissipation is limited by 150ꢁ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
Unitpower
US2421
P-Ch 20V Fast Switching MOSFETs
Typical Characteristics
70
60
50
40
30
ID=-4A
1
2
3
4
5
6
-VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
10
8
6
T =150
ꢄ
J
T =25
ꢄ
J
4
2
0
0
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
)
T , Junction Temperature ( )
ꢀ
J
ꢀ
J
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
Unitpower
US2421
P-Ch 20V Fast Switching MOSFETs
10000
1000
100
Ciss
Coss
Crss
F=1.0MHz
10
1
5
9
13
17
21
-VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
TON
0.001 SINGLE PULSE
T
D = TON/T
TJpeak = TC + PDM x RꢀJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
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