P5000EB [UNSEMI]
Thyristor Surge Suppressors (TSS);
| 型号： | P5000EB |
| 厂家： | 
UN Semiconducctor INC |
| 描述： | Thyristor Surge Suppressors (TSS) |
| 文件： | 总5页 (文件大小：630K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Thyristor Surge Suppressors (TSS)
P0080EB - P5000EB Series - TO-92
@10/700μS , 4KV
Description
P0080EB - P5000EB Series are designed to protect broadband
equipment such as modems, line card, CPE and DSL from
damaging over-voltage transients.
The series provides a surface mount solution that enables
equipment to comply with global regulatory standards.
Features and Benefits
u
u
u
Low voltage overshoot
Pinout Designation
Low on-state voltage
Does not degrade surge capability after multiple surge events
within limit
u
Fails short circuit when surged in excess of ratings
Low Capacitance
u
PIN3
PIN1
Schematic Symbol
Applicable Global Standards
u
TIA-968-A / TIA-968-B
ITU K.20/21 Enhanced level
ITU K.20/21 Basic Level
GR 1089 Inter building
GR 1089 Inter building
IEC 6100-4-5
u
u
u
u
u
u
u
u
YD/T 1082
YD/T 993
YD/T 950
Electrical Parameters
Parameter
Definition
+I
Switching Current - maximum current required to switch to
on state
IS
IDRM
IH
Leakage Current - maximum peak off-state current
measured at VDRM
IT
IS
IH
Holding Current - minimum current required to maintain on
state
On-state Current - maximum rated continuous on-state
current
IDRM
IT
-V
+V
Switching Voltage - maximum voltage prior to switching to
on stat
VS
VT VDRM
VS
Peak Off-state Voltage - maximum voltage that can be
applied while maintaining off state
VDRM
VT
On-state Voltage - maximum voltage measured at rated
on-state current
Off-state Capacitance - typical capacitance measured in
off state
C0
-I
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Revision October 18, 2013
1 / 5
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Thyristor Surge Suppressors (TSS)
P0080EB - P5000EB Series - TO-92
@10/700μS , 4KV
Electrical Characteristics
VDRM
@IDRM=5μA
VS
@100V/μS
VT
@IT=2.2A
C0
@1MHz
IS
IT
IH
Part
Number
Marking
V min
V max
V max
mA max
A max
mA min
pF min
pF max
P0080EB
P0300EB
P0640EB
P0720EB
P0900EB
P1100EB
P1300EB
P1500EB
P1800EB
P2000EB
P2300EB
P2600EB
P3100EB
P3500EB
P4000EB
P4500EB
P5000EB
P0080EB
P0300EB
P0640EB
P0720EB
P0900EB
P1100EB
P1300EB
P1500EB
P1800EB
P2000EB
P2300EB
P2600EB
P3100EB
P3500EB
P4000EB
P4500EB
P5000EB
6
25
40
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
50
25
15
40
35
25
30
25
25
25
20
25
20
20
20
20
20
20
150
140
60
60
55
50
45
40
35
35
35
35
35
35
35
35
35
25
50
58
77
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
65
88
75
98
90
130
160
180
220
220
260
300
350
400
460
540
600
120
140
170
180
190
220
275
320
360
400
440
Notes:
- Absolute maximum ratings measured at TA= 25ºC (unless otherwise noted).
- Devices are bi-directional.
Surge Ratings
2/10μS1
2/10μS2
A min
250
8/20μS1
1.2/50μS2
A min
10/160μS1
10/160μS2
A min
10/560μS1
10/560μS2
A min
10/1000μS1
10/1000μS2
A min
5/310μS1
ITSM
50/60 Hz
di/dt
10/700μS2
A min
100
Series
A min
Amps/µs max
B
250
150
100
80
30
500
Notes:
- Peak pulse current rating (IPP) is repetitive and guaranteed for the life of the product.
- IPP ratings applicable over temperature range of -40ºC to +85ºC
1. Current waveform in µs
2. Voltage waveform in µs
- The device must initially be in thermal equilibrium with -40°C < TJ < +150°C
Thermal Considerations
Package
Symbol
TJ
Parameter
Value
Unit
°C
Operating Junction Temperature Range
Storage Temperature Range
- 40 to + 150
- 40 to +150
90
TO-92
TS
°C
RθJA
Thermal Resistance: Junction to Ambient
°C/W
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Revision October 18, 2013
2 / 5
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Thyristor Surge Suppressors (TSS)
P0080EB - P5000EB Series - TO-92
Characteristic Curves
Figure 1 - V-I Characteristics
+I
@10/700μS , 4KV
Figure 2 - tr × td Pulse Waveform
tr=rise time to peak value
td=decay time to half value
IT
100
50
Peak
Value
IS
IH
Waveform=tr×td
IDRM
-V
+V
Half Value
VT VDRM
VS
50
tr
td
0
t – Time (μs)
-I
Figure 4 - Normalized DC Holding Current Versus Case
Temperature
Figure 3 - Normalized VS Change Versus Junction
Temperature
2.0
1.8
1.6
14
12
10
8
1.4
6
25℃
25℃
1.2
1.0
0.8
0.6
0.4
4
2
9
-4
-6
-8
-40 -20
0
20 40
60 80 100 120 140 160
-40 -20
0
20
40 60 80 100 120 140 160
Case Temperature (TC) - ℃
Junction Temperature (TJ) - ℃
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Revision October 18, 2013
3 / 5
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Thyristor Surge Suppressors (TSS)
P0080EB - P5000EB Series - TO-92
@10/700μS , 4KV
Environmental Specifications
Physical Specifications
80% Rated VDRM (VAC Peak ) +125°C or +150°C,
Lead Material
Copper Alloy
High Temp Voltage
Blocking
Lead Material Copper Alloy High Temp Voltage
Blocking 504 or 1008 hrs. MIL-STD-750 (Method
1040) JEDEC, JESD22-A-101
Terminal Finish
100% Matte-Tin Plated
UL recognized epoxy meeting flammability
classification 94V-0
-65°C to +150°C, 15 min. dwell, 10 up to 100 cycles.
Body Material
Temp Cycling
MIL-STD-750
JESD22-A104
(Method
1051)
EIA/JEDEC,
Biased Temp &
Humidity
52 VDC (+85°C) 85%RH, 504 up to 1008 hrs.
EIA/
JEDEC, JESD22-A-101
+150°C 1008 hrs.
MIL-STD-750 (Method 1031)
High Temp Storage
Low Temp Storage
JEDEC, JESD22-A-101
-65°C, 1008 hrs.
0°C to +100°C,
5 min. dwell, 10 sec. transfer,
Thermal Shock
Thermal Shock 10 cycles.
MIL-STD-750 (Method
1056) JEDEC, JESD22-A-106
Autoclave (Pressure
Cooker Test)
+121°C, 100%RH, 2atm, 24 up to 168 hrs.
EIA/Cooker Test) JEDEC, JESD22-A-102
Resistance to Solder
Heat
+260°C, 30 secs.
MIL-STD-750 (Method 2031
Moisture Sensitivity
Level
85%RH, +85°C, 168 hrs., 3 reflow cycles Level
(+260°C Peak). JEDEC-J-STD-020, Level 1
Soldering Parameters
Reflow Condition
Lead–free assembly
-Temperature Min (Ts(min)
)
-Temperature Max (Ts(max)
-Time (min to max) (ts)
+150°C
TP
Critical Zone
TL to TP
Ramp-up
Pre Heat
)
+200°C
TL
60 -180 Seconds
TS(max)
Average ramp up rate ( Liquidus Temp TL)
to peak
Ramp-down
3°C/Second Max
TS(min)
TS(max) to TL - Ramp-up Rate
3°C/Second Max
+217°C
Preheat
- Temperature (TL) (Liquidus)
Reflow
25
Time to peak temperature
Time
- Time (min to max) (ts)
60 -150 Seconds
260 +0/-5°C
(t 25℃ to peak)
Peak Temperature (TP)
Time within 5°C of actual peak Temperature
(tp)
30 Seconds Max
Ramp-down Rate
6°C/Second Max
8 minutes Max
+260°C
Time 25°C to peak Temperature (TP)
Do not exceed
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Revision October 18, 2013
4 / 5
Thyristor Surge Suppressors (TSS)
P0080EB - P5000EB Series - TO-92
@10/700μS , 4KV
Part Numbering
Part Marking
Part Marking Code
(Refer to Electrical Characteristics Table)
PXXXXE
B
Date code
Dimensions TO-92
Inches
Millimeters
Dimensions
Min
Max
Min
4.47
12.70
2.41
3.81
3.43
2.23
4.47
2.23
0.33
0.33
Max
A
B
D
E
G
H
J
0.176
0.500
0.095
0.150
0.135
0.088
0.176
0.088
0.013
0.013
0.196
4.98
0.105
2.67
0.145
0.096
0.186
0.096
0.019
0.017
0.060
3.68
2.44
4.73
2.44
0.48
0.43
1.52
K
L
MT1/PIN1
MT2/PIN3
M
N
All leads are insulated from case.
Case is electrically
non-conductive. (Rated at 1600 V(AC) RMS for one minute from leads
to case over the operating temperature range.)
The TO-92 is designed to meet mechanical standards as set forth in
JEDEC publication number 95.
Mold flash shall not exceed 0.13 mm per side.
Packaging
Part Number
Pxxx0EB
Description
Quantity
TO-92 Bulk Pack
1000
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Revision October 18, 2013
5 / 5
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