12N10L-TN3-R [UTC]

12A, 100V N-CHANNEL POWER MOSFET; 12A ， 100V N沟道功率MOSFET


型号：	12N10L-TN3-R
厂家：	Unisonic Technologies
描述：	12A, 100V N-CHANNEL POWER MOSFET 12A ， 100V N沟道功率MOSFET
文件：	总5页 (文件大小：194K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

12N10

Preliminary

Power MOSFET

12A, 100V N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC UT12N10 is an N-channel mode power MOSFET using

TO-252

UTC’s advanced technology to provide customers with minimum

on-state resistance for extremely high dense cell design, rugged

avalanche characteristics and less critical alignment steps .

FEATURES

* R_DS(on)< 0.10Ω @V_GS= 10 V

* R_DS(on)< 0.12Ω @V_GS= 5.0 V

* High switching speed

* Low gate charge

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

12N10L-TN3-R

12N10L-TN3-T

12N10G-TN3-R

12N10G-TN3-T

TO-252

Tape Reel

Tube

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12N10

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS(T_C= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

RATINGS

100

UNIT

Drain-Source Voltage (V_GS=0)

Gate-Source Voltage

V_GSS

±20

T_C= 25°C

Continuous

I_D

Drain Current

T_C= 100°C

8.5

Pulsed (Note 2)

I_DM

Power Dissipation

Derating Factor

P_D

E_AS

T_J

0.2

W/°C

°C

Avalanche Energy (Note 3)

Junction Temperature

Storage Temperature

100

+150

-55 ~ +150

T_STG

Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area

3. Starting T_J= 25°C, I_D= 12A, V_DD= 50V

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

UNIT

°C/W

Junction to Ambient

Junction to Case

100

θ_JC

ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

V_DS=Max rating, V_GS=0V

_GS=+20V, V_DS=0V

100

µA

Forward

Reverse

+100 nA

-100 nA

Gate- Source Leakage Current

I_GSS

V_GS=-20V, V_DS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=6A

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

0.15 0.18

Ω

C_ISS

C_OSS

C_RSS

430

Output Capacitance

V_GS=0V, V_DS=25V, f=1.0MHz

Reverse Transfer Capacitance

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12N10

Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING PARAMETERS (Note 1,2)

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

7.5 10

2.5

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

_GS=10V, V_DD=80V, I_D=12A

3.0

V_DD=30V, I_D=1A, R_G=9.1Ω,

_GS=10V (Fig. 1)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

(Note 1)

I_S

I_SM

V_SD

I_S=12A, V_GS=0V

1.2

Notes: 1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Essentially independent of operating temperature

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12N10

Preliminary

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

V_DD

1000µF

FAST

DIODE

L=100µH

D. U. T

3.3µF

V_D

I_D

3.3µF

25Ω

2200µF

D. U. T

R_G

V_I

D. U. T

P_W

Fig. 3 Test Circuit for Inductive Load Switching and Diode Recovery Times

Fig. 4 Unclamped Inductive Load Test Circuit

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12N10

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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