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2SA1020

更新时间：2024-09-18 01:45:02
品牌：UTC
描述：PNP EPITAXIAL SILICON TRANSISTOR

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2SA1020 概述

PNP EPITAXIAL SILICON TRANSISTOR PNP外延硅晶体管

2SA1020 数据手册

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UTC2SA1020  
PNPEPITAXIAL SILICON TRANSISTOR  
SILICON PNP EPITAXIAL  
TRANSISTOR  
DESCRIPTION  
The UTC 2SA1020 is designed for power amplifier and  
power switching applications.  
1
FEATURES  
*Low collector saturation voltage:  
VCE(sat)=-0.5V(max.) (IC=-1A)  
*High speed switching time: tstg=1.0µs(Typ.)  
*Complement to UTC 2SC2655  
SOT-89  
1:EMITTER 2:COLLECTOR 3:BASE  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
VALUE  
UNIT  
V
V
V
A
Collector-Base Voltage  
-50  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-50  
-5  
-2  
Collector Power Dissipation  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
PC  
PC*  
Tj  
TSTG  
0.5  
1
150  
W
W
°C  
°C  
-55 ~ +150  
* : Mounted on cermic substrate( 250mm2 × 0.8t )  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector cut-off current  
Emitter cut-off current  
Collector to emitter breakdown  
voltage  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB=-50V, IE=0  
VEB=-5V, IC=0  
MIN TYP MAX UNIT  
-1.0  
-1.0  
µA  
µA  
V
IEBO  
V(BR)CEO  
Ic=-10mA, IB=0  
-50  
DC Current Gain  
hFE1  
hFE2  
VCE(sat)  
VCE=-2V, IC=-0.5A  
VCE=-2V, IC=-1.5A  
Ic=-1A, IB=-0.05A  
70  
40  
240  
-0.5  
-1.2  
Collector to emitter saturation  
voltage  
Base to emitter saturation voltage  
Transition frequency  
Collector output capacitance  
Switching time  
V
VBE(sat)  
fT  
Cob  
ton  
tstg  
tf  
Ic=-1A, IB=-0.05A  
VCE=-2V, Ic=-0.5A  
VCB=-10V, IE=0, f=1MHz  
V
MHz  
pF  
µs  
µs  
100  
40  
0.1  
1.0  
0.1  
Turn-on time  
Storage time  
Fall time  
µs  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-021,A  
UTC2SA1020  
PNPEPITAXIAL SILICON TRANSISTOR  
CLASSIFICATION OF hFE1  
RANK  
O
Y
RANGE  
70 - 140  
120 - 240  
TYPICAL PERFORMANCE CHARACTERISTICS  
VCE-IC  
VCE-IC  
-1.0  
-1.0  
-10 -20 -40  
IB=-5mA  
-80  
-40 -60 -80  
-20 -30  
-0.8  
-0.6  
-0.8  
-0.6  
-120  
IB=-5mA  
-120  
-160  
-160  
-200  
-180  
-200  
-0.4  
-0.4  
-0.2  
0
-0.2  
0
COMMON EMITTER  
COMMON EMITTER  
Ta=25 ℃  
Ta=100℃  
-1.2 -1.6 -2.0 -2.4  
Collector Current Ic(A)  
-2.8  
-1.6  
0
-0.4 -0.8  
-1.2  
-2.0 -2.4  
-2.8  
0
-0.4 -0.8  
Collector Current Ic(A)  
VCE-IC  
hFE-Ic  
1000  
-1.0  
-0.8  
-0.6  
-0.4  
COMMON EMITTER  
VCE=-2V  
IB=-10mA  
-40  
500  
300  
-20 -30  
-60  
-80  
Ta=100℃  
-120  
-160  
-200  
25℃  
100  
50  
30  
-55℃  
-0.2  
0
COMMON EMITTER  
Ta=-55℃  
10  
-1.2 -1.6 -2.0 -2.4  
-0.4 -0.8  
Collector Current Ic(A)  
-0.005 -0.01  
-0.3  
-2.8  
-0.03 -0.1  
-1  
-3  
0
Collector Current IC(A)  
2
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-021,A  
UTC2SA1020  
PNPEPITAXIAL SILICON TRANSISTOR  
VCE(sat)-Ic  
VCE(sat)-Ic  
COMMON EMITTER  
-10  
-1  
COMMON EMITTER  
IC/IB=20  
IC/IB=20  
-5  
-3  
-0.5  
-0.3  
Ta=100℃  
-55℃  
-1  
-0.1  
-0.5  
-0.3  
-0.05  
-0.03  
-55℃  
25℃  
Ta=100℃ 25℃  
-0.1  
-0.01  
-0.005 -0.01  
-0.3  
-0.03 -0.1  
-1  
-3  
-0.005 -0.01  
-0.3  
-0.03 -0.1  
-1  
-3  
Collector Current IC(A)  
Collector Current IC(A)  
Ic -VBE  
Pc-Ta  
-2.0  
-1.5  
-1.0  
-0.5  
1.2  
COMMON EMITTER  
1.Mounted on Ceramic  
Substrate (250mm2*0.8t)  
VCE=-2V  
1
1.0  
2.Ta=25℃  
-55℃  
0.8  
Ta=100℃  
0.6  
2
25℃  
0.4  
0.2  
0
0
-0.4  
-1.6  
-0.8  
-1.2  
0
60  
80 100  
140  
160  
120  
0
40  
20  
Base Emitter Voltage VBE(V)  
Ambient Temperature Ta℃  
Safe Operation Area  
-5  
-3  
Ic max.(pulsed)*  
Ic max.(pulsed)*  
10ms*  
1ms*  
-1  
1s*  
-0.5  
-0.3  
DC OPERATION  
Ta=25℃  
-0.1  
*Single nonrepetitive pulse  
Ta=25℃  
-0.05  
-0.03  
Curves must be derated  
linearly with increase  
in temperature  
VCEO MAX  
-10 -30  
Collector Emitter Voltage VCE (V)  
-0.01  
-100  
-0.3  
-1  
-3  
3
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-021,A  
UTC2SA1020  
PNPEPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
4
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-021,A  

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