2SC3669G-Y-TN3-T [UTC]

Small Signal Bipolar Transistor;


型号：	2SC3669G-Y-TN3-T
厂家：	Unisonic Technologies
描述：	Small Signal Bipolar Transistor
文件：	总4页 (文件大小：270K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SC3669

NPN EPITAXIAL SILICON TRANSISTOR

POWER AMPLIFIER

APPLICATIONS POWER

SWITCHING APPLICATIONS

FEATURES

* Low saturation voltage

_CE(SAT)=0.5V (Max.)

* High speed switching time: T_STG=1.0μs (Typ.)

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

SOT-223

SOT-89

TO-251

TO-252

Tape Reel

Tube

2SC3669L-x-AA3-R

2SC3669L-x-AB3-R

2SC3669L-x-TM3-T

2SC3669L-x-TN3-T

2SC3669L-x-TN3-R

2SC3669G-x-AA3-R

2SC3669G-x-AB3-R

2SC3669G-x-TM3-T

2SC3669G-x-TN3-T

2SC3669G-x-TN3-R

Tube

Tape Reel

Note: Pin Assignment: B: Base C: Collector

E: Emitter

www.unisonic.com.tw

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2SC3669

NPN EPITAXIAL SILICON TRANSISTOR

PIN ABSOLUTE MAXIMUM RATING ( T_A=25°C)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

I_B

SOT-223/SOT-89

TO-251/TO-252

0.5

°C

Collector Power Dissipation

P_C

Junction Temperature

Storage Temperature

T_J

150

T_STG

-55 ~ +150

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0°C~70°C operating temperature range

and assured by design from –20°C~85°C.

ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_(BR)CEO

I_CBO

TEST CONDITIONS

I_C= 10mA, I_B= 0

MIN TYP MAX UNIT

Collector Emitter Breakdown Voltage

Collector Cut-Off Current

V_CB=80V, I_E= 0

1.0

240

μA

Emitter Cut-Off Current

I_EBO

V_EB= 5V, I_C=0

h_FE1

V_CE=2V, I_C=0.5A

V_CE=2V, I_C=1.5A

I_C=1A, I_B=0.05A

V_CE=2V, I_C=0.5A

V_CB= 10V, I_E= 0, f=1MHz

DC Current Gain

h_FE2

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

Transition Frequency

V_CE(SAT)

V_BE(SAT)

f_T

0.15 0.5

0.9

100

1.2

MHz

Collector Output Capacitance

Cob

Turn-on Time

t_ON

T_STG

t_f

0.2

1.0

0.2

μs

Switching Time

Storage Time

Fall Time

I_B1= -I_B2=0.05A

DUTY CYCLE ≤ 1%

CLASSIFICATION OF h_FE1

RANK

RANGE

70~140

120~240

UNISONIC TECHNOLOGIES CO., LTD

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2SC3669

NPN EPITAXIAL SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

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2SC3669

NPN EPITAXIAL SILICON TRANSISTOR

TYPICAL CHARACTERISTICS (Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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