K1109L-J32-AE3-R [UTC]

Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, LEAD FREE PACKAGE-3;


型号：	K1109L-J32-AE3-R
厂家：	Unisonic Technologies
描述：	Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, LEAD FREE PACKAGE-3 放大器光电二极管晶体管
文件：	总4页 (文件大小：169K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

K1109

N-CHANNEL JFET

N-CHANNEL JFET FOR

ELECTRET CONDENSER

MICROPHONE

DESCRIPTION

The UTC K1109 is N-channel JFET for electrets condenser

microphone.

FEATURES

* High GM Implies Low Transfer loss

* Built-In Gate-Source Diode and Resistor Implies Fast Power on

Settling Time

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

K1109L-x-AE3-R

K1109L-x-AC3-R

K1109G-x-AE3-R

K1109G-x-AC3-R

SOT-23

Tape Reel

SOT-113

MARKING

www.unisonic.com.tw

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QW-R206-009.M

K1109

N-CHANNEL JFET

ABSOLUTE MAXIMUM RATINGS (unless otherwise specified )

PARAMETER

SYMBOL

V_DSX

V_GDO

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Drain Voltage

Drain Current

-20

°C

Gate Current

I_G

Power Dissipation

Junction Temperature

Storage Temperature

P_D

T_J

+125

T_STG

-55 ~ +125

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

I_DSS

TEST CONDITIONS

V_DS=2.0V, V_GS=0

MIN TYP MAX UNIT

Drain Current

600

-1.0

μA

Gate Off Voltage

V_GS(OFF)

lYFSl

C_ISS

V_DS=5.0V, I_D=1.0μA

V_DS=5.0V, V_GS=0, f=1kHz

V_DS=5.0V, V_GS=0, f=1.0MHz

-0.1

Forward Transfer Admittance

Input Capacitance

Noise Voltage

600 1600

μS

7.0

1.8

8.0

3.0

CLASSIFICATION OF I_DSS

RANK

J32

J33

J34

J35

J36

J37

300-600

RANGE

40-70

60-110

90-180

150-300

200-450

UNISONIC TECHNOLOGIES CO., LTD

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QW-R206-009.M

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K1109

N-CHANNEL JFET

TEST CIRCUIT

UNISONIC TECHNOLOGIES CO., LTD

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QW-R206-009.M

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K1109

N-CHANNEL JFET

TYPICAL CHARACTERISTICS

Power Dissipatio vs Ambient Temperature

Drian Current vs Drain Source Voltage(J35)

600

100

0.15V

500

0.10V

0.05V

400

300

V_GS=0V

200

-0.05V

-0.10V

-0.15V

100

)

125

Ambient Temperature, T_A(

Drain Source Voltage,V_DS(V)

|YFS| - I_DSS

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

350

100

Zero-Gate Voltage Drain Current,I_DSS-uA

150

200

250

300

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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