UT6302G-AE3-R [UTC]
P-CHANNEL ENHANCEMENT MOSFET; P沟道增强型MOSFET
| 型号： | UT6302G-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | P-CHANNEL ENHANCEMENT MOSFET |
| 文件： | 总6页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT6302
Power MOSFET
P-CHANNEL
ENHANCEMENT MOSFET
DESCRIPTION
The UTC UT6302 is a power MOSFET offering the customers
efficient and reliable performance.
The UTC UT6302 is ideal for thin application environments, such
as portable electronics and PCMCIA cards.
FEATURES
* Extremely-Low On-Resistance
* Fast Switching Speed
SYMBOL
Drain (3)
Gate (2)
Source (1)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
S
S
2
3
D
D
UT6302L-AE2-R
UT6302L-AE3-R
UT6302G-AE2-R
UT6302G-AE3-R
SOT-23-3
SOT-23
G
G
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-363.E
UT6302
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-20
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±12
V
Continuous Drain Current (VGS=-4.5V, Ta=25°C)
Pulsed Drain Current (Note 2)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation (TA=25°C)
Linear Derating Factor above 25°C
Junction Temperature
-0.78
-4.9
A
IDM
A
dv/dt
-5.0
V/nS
mW
mW /°C
°C
540
PD
4.3
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. ISD≤-0.61A, di/dt≤76A/µs, VDD≤V(BR)DSS, TJ=150°C
THERMAL DATA
PARAMETER
Junction to Ambient
Note: Surface Mounted on FR-4 Board, t ≤ 5sec.
SYMBOL
RATINGS
230
UNIT
°C/W
θJA
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Drain-Source Breakdown Voltage
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0 V, ID=-250 µA
VDS=-16V,VGS=0V
-20
V
µA
-1.0
IGSS
△BVDSS/△TJ
VGS=±12 V, VDS=0 V
ID=-1mA, Reference to 25°C
±100
nA
-4.9
mV/°C
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS =VGS, ID=-250µA
-0.70
-1.5
0.60
0.90
V
Ω
Ω
VGS=-4.5V, ID=-0.61A (Note 2)
Static Drain-Source On-Resistance
VGS=-2.7V, ID=-0.31A (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
97
53
28
pF
pF
pF
Output Capacitance
VDS=-15V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
2.4
3.6
nC
nC
nC
nS
nS
nS
nS
VGS=-4.5V, VDS=-16V
Gate Source Charge
Gate Drain Charge
0.56 0.84
ID=-0.61A (Note 1, 2)
1.0
13
18
22
22
1.5
Turn-ON Delay Time
Turn-ON Rise Time
VDD=-10V, ID=-0.61A,
RG=6.2Ω, RD=16Ω (Note 1, 2)
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
UNISONIC TECHNOLOGIES CO., LTD
2 of 6
QW-R502-363.E
www.unisonic.com.tw
UT6302
Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
IS
IS=-0.61A, VGS=0V
-1.2
V
A
-0.54
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
-4.9
A
Reverse Recovery Time
trr
35
26
53
39
nS
nC
TJ=25°C ,IF=-0.61A,
di/dt=100A/µs (Note 2)
Reverse Recovery Charge
QRR
Notes: 1. Repetitive Rating; Pulse width limited by TJ(MAX)
2. Pulse Width ≤300μs, Duty Cycle ≤2%.
UNISONIC TECHNOLOGIES CO., LTD
3 of 6
QW-R502-363.E
www.unisonic.com.tw
UT6302
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
Circuit Layout Considerations
D.U.T.
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
(3)
-
+
(2)
(4)
-
+
-
(Note 2)
(1)
RG
dv/dt controlled by RG
ISD controlled by Duty Factor “D”
D.U.T. –Device Under Test
+
VDD
(Note 1)
-
VGS
(Note 1)
Peak Diode Recovery dv/dt Test Circuit
(1)
Driver Gate Drive
P.W.
Period
P.W.
Period
D=
VGS=10V
(Note 3)
(2)
D.U.T. ISD Waveform
Reverse
Recovery
Current
(3)
Body Diode Forward Current
di/dt
D.U.T. VDS Waveform
Body Recovery
dv/dt
VDD
Re-Applied
Voltage
Body Diode Forward Drop
(4)
Inductor Current
ISD
Ripple≤5
Peak Diode Recovery dv/dt Waveforms
Notes: 1.
Reverse Polarity for P-Channel
2.
3.
Use P-Channel Driver for P-Channel Measurements
VGS=5.0V for Logic Level and 3V Drive Devices
UNISONIC TECHNOLOGIES CO., LTD
4 of 6
QW-R502-363.E
www.unisonic.com.tw
UT6302
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Current Regulator
Same Type as D.U.T.
QG
50kꢀ
-4.5V
12V
0.3µF
0.2µF
-
+
VDS
QGS
QGD
D.U.T.
VG
VGS
-3mA
IG
ID
Charge
Current Sampling Resistors
Gate Charge Test Circuit
Gate Charge Waveforms
VDS
90%
10%
VGS
td(ON)
td(OFF) tF
tR
Switching Time Test Circuit
Switching Time Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 6
QW-R502-363.E
www.unisonic.com.tw
UT6302
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
10
20
30
40
50
0
200
400 600 800 1000 1200
Gate Threshold Voltage, -VTH (V)
Drain-Source Breakdown Voltage, -BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
6 of 6
QW-R502-363.E
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明