UT6302 [UTC]
P-CHANNEL ENHANCEMENT MOSFET; P沟道增强型MOSFET型号: | UT6302 |
厂家: | Unisonic Technologies |
描述: | P-CHANNEL ENHANCEMENT MOSFET |
文件: | 总5页 (文件大小:160K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT6302
Preliminary
Power MOSFET
P-CHANNEL
ENHANCEMENT MOSFET
DESCRIPTION
The UTC UT6302 is a Power MOSTET offering the customers
efficient and reliable performance.
The UTC UT6302 is ideal for thin application environments,
such as portable electronics and PCMCIA cards.
FEATURES
* Extremely-low on-resistance
* Fast switching speed
* Halogen Free
SYMBOL
ORDERING INFORMATION
Pin Assignment
Ordering Number
UT6302G-AE3-R
Package
SOT-23
Packing
Tape Reel
1
2
3
G
S
D
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UT6302
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
-20
UNIT
V
Drain-Source Voltage
VDSS
VGSS
ID
Gate-Source Voltage
±12
V
Continuous Drain Current (VGS=-4.5V, Ta=25°C)
Pulsed Drain Current (Note 2)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation (Ta=25°C)
Derate above 25°C
-0.78
-4.9
A
IDM
A
dv/dt
-5.0
V/nS
mW
mW /°C
°C
540
PD
4.3
Junction Temperature
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. ISD≤-0.61A, di/dt≤76A/µs, VDD≤V(BR)DSS, TJ=150°C
THERMAL DATA
PARAMETER
Junction to Ambient
Note: Surface Mounted on FR-4 Board, t≤5sec.
SYMBOL
MIN
TYP
MAX
230
UNIT
°C/W
θJA
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Drain-Source Breakdown Voltage
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0 V, ID=-250 µA
-20
V
µA
VDS=-16V,VGS=0V
-1.0
IGSS
△BVDSS/△TJ
VGS=±12 V, VDS=0 V
ID=-1mA, Reference to 25°C
±100
nA
-4.9
mV/°C
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS =VGS, ID=-250µA
-0.70
-1.5
0.60
0.90
V
Ω
Ω
VGS=-4.5V, ID=-0.61A (Note 2)
VGS=-2.7V, ID=-0.31A (Note 2)
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
97
53
28
pF
pF
pF
VDS=-15V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
2.4
3.6
nC
nC
nC
nS
nS
nS
nS
VGS=-4.5V, VDS=-16V
Gate Source Charge
Gate Drain Charge
0.56 0.84
ID=-0.61A (Note 2)
1.0
13
18
22
22
1.5
Turn-ON Delay Time
Turn-ON Rise Time
VDD=-10V, ID=-0.61A,
RG=6.2Ω, RD=16Ω (Note 2)
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
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UT6302
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
IS
IS=-0.61A, VGS=0V (Note 2)
-1.2
V
A
-0.54
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
-4.9
A
Reverse Recovery Time
tRR
TJ=25°C ,IF=-0.61A,
di/dt=100A/µs (Note 2)
35
26
53
39
nS
nC
Reverse Recovery Charge
QRR
Notes: 1. Repetitive Rating; Pulse width limited by TJ(MAX)
2. Pulse Width ≤300μs, Duty Cycle ≤2%.
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UT6302
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
Circuit Layout Considerations
D.U.T.
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
(3)
-
+
(2)
(4)
-
+
-
**
(1)
RG
dv/dt controlled by RG
ISD controlled by Duty Factor “D”
D.U.T. –Device Under Test
+
VDD
*
-
VGS
*
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
(1)
Driver Gate Drive
Period
P.W.
Period
D=
P.W.
VGS=10V***
(2)
D.U.T. ISD Waveform
Reverse
Recovery
Current
(3)
Body Diode Forward Current
di/dt
D.U.T. VDS Waveform
Body Recovery
dv/dt
VDD
Re-Applied
Voltage
Body Diode Forward Drop
(4)
Inductor Current
ISD
Ripple≤5%
Fig. 1B Peak Diode Recovery dv/dt Waveforms
* Reverse Polarity for P-Channel
**Use P-Channel Driver for P-Channel Measurements
*** VGS=5.0V for Logic Level and 3V Drive Devices
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UT6302
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Current Regulator
Same Type as D.U.T.
QG
50kꢀ
-4.5V
12V
0.3µF
0.2µF
-
+
VDS
QGS
QGD
D.U.T.
VG
VGS
-3mA
IG
ID
Charge
Current Sampling Resistors
Gate Charge Test Circuit
Gate Charge Waveforms
VDS
90%
10%
VGS
td(ON)
td(OFF) tF
tR
Switching Time Test Circuit
Switching Time Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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