UTC2SC1815 [UTC]
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR; 音频放大器高频率OSC NPN晶体管
| 型号： | UTC2SC1815 |
| 厂家： | 
Unisonic Technologies |
| 描述： | AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
| 文件： | 总2页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR
FEATURES
*Collector-Emitter voltage:
BVCEO=50V
1
*Collector current up to 150mA
* High hFE linearity
*complimentary to 2SA1015
TO-92
1:EMITTER 2:COLLECTOR 3. BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
RATING
UNIT
V
V
60
50
5
400
150
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25°C)
Collector current
V
mW
mA
mA
°C
Ic
Base current
Junction Temperature
Storage Temperature
IB
Tj
TSTG
50
125
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
Parameter
Symbol
ICBO
Test conditions
VCB=60V,IE=0
VEB=5V,Ic=0
MIN TYP MAX UNIT
Collector cut-off current
Emitter cut-off current
DC current gain(note)
100
100
700
nA
nA
IEBO
hFE1
hFE2
V
CE=6V,Ic=2mA
70
25
VCE=6V,Ic=150mA
Ic=100mA,IB=10mA
Ic=100mA,IB=10mA
VCE=10V,Ic=50mA
VCB=10V,IE=0,f=1MHz
Ic=-0.1mA,VCE=6V
RG=10kΩ,f=100Hz
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
VCE(sat)
VBE(sat)
fT
Cob
NF
0.1
0.25
1.0
V
V
80
MHz
pF
dB
2.0
1.0
3.0
1.0
Noise Figure
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R201-006,A
UTC2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE1
RANK
Y
G
L
RANGE
120-240
200-400
350-700
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Fig.2 DC current Gain
Fig.3 Base-Emitter on Voltage
100
80
3
2
10
10
VCE=6V
1
VCE=6V
10
2
I
B=300
µ
A
10
60
40
I
I
I
B
=250
=200
=150
µ
µ
A
A
A
B
1
0
10
B
B
µ
µ
10
20
0
I
=100
A
IB=50 µA
0
-1
10
10
0
4
8
12
16
20
-1
10
0
1
2
3
0
0.2
0.4
0.6
0.8
1.0
10
10
10
10
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
4
3
10
2
10
10
Ic=10*I
B
V
CE=6V
f=1MHz
3
2
10
V
BE(sat)
I
E=0
10
1
10
2
1
10
0
10
10
VCE(sat)
-1
10
1
0
10
10
3
0
1
2
3
10
-1
10
0
1
2
10
-1
10
0
1
2
10
10
10
10
10
10
10
10
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R201-006,A
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