UTT60N06 [UTC]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | UTT60N06 |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总8页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTT60N06
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
DESCRIPTION
The UTC UTT60N06 is n-channel enhancement mode power
field effect transistors with stable off-state characteristics, fast
switching speed and low thermal resistance. usually used at
telecom and computer applications.
FEATURES
* RDS(ON) = 18mΩ @VGS = 10 V
* Fast switching capability
* Avalanche energy Specified
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-252
Packing
3
Lead Free
Halogen Free
UTT60N06G-TN3-R
1
2
UTT60N06L-TN3-R
G
D
S
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
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QW-R502-575.A
UTT60N06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
60
UNIT
V
Drain to Source Voltage
Gate to Source Voltage
VGS
±20
V
TC = 25°C
60
A
Continuous Drain Current
ID
TC = 100°C
39
A
Drain Current Pulsed (Note 2)
Avalanche Energy
IDM
EAS
PD
120
A
Single Pulsed
100
mJ
W
°C
°C
Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
83
TJ
+150
-55 ~ +150
TSTG
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
110
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
1.8
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UTT60N06
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250μA
VDS = 60 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
60
V
1
μA
nA
Forward
100
Gate-Source Leakage Current
IGSS
Reverse
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
18
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10 V, ID = 30 A
14
mΩ
CISS
COSS
CRSS
2000
400
pF
pF
pF
VGS = 0V, VDS =25V, f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
115
tD(ON)
tR
tD(OFF)
tF
12
11
25
15
39
12
10
30
30
50
30
60
ns
ns
Rise Time
VDD=48V, ID=60A, RL=0.5Ω,
VGS=10V (Note 1, 2)
Turn-Off Delay Time
ns
Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
VDS = 30V, VGS = 10 V
Gate-Source Charge
QGS
QGD
ID = 60A (Note 1, 2)
Gate-Drain Charge (Miller Charge)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
Continuous Source Current
Pulsed Source Current
Reverse Recovery Time
Reverse Recovery Charge
VSD
IS
VGS = 0 V, IS = 60A
1.6
60
V
A
ISM
tRR
QRR
120
IS = 60A, VGS = 0 V,
dIF/dt = 100 A/μs (Note 1)
60
ns
3.4
μC
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
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UTT60N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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UTT60N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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UTT60N06
Power MOSFET
TYPICAL CHARACTERISTICS
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UTT60N06
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Normalized Thermal Transient Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.02
0.05
0.
01
10-5
10-4
10-3
10-2
10-1
1
3
Square Wave Pulse Duration (sec)
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UTT60N06
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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