UTT60N10G-TA3-T [UTC]
60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR; 60A ， 100V N沟道增强型功率MOSFET晶体管
| 型号： | UTT60N10G-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR |
| 文件： | 总3页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTT60N10
Preliminary
Power MOSFET
60A, 100V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET TRANSISTOR
DESCRIPTION
The UTC UTT60N10 is an N-channel enhancement power
MOSFET using UTC’s advanced technology to provide the
customers with perfect RDS(ON), high switching speed, high current
capacity and low gate charge.
The UTC UTT60N10 is suitable for motor control, AC-DC or
DC-DC converters and audio amplifiers, etc.
FEATURES
* RDS(ON)=18mΩ @ VGS=10V,ID=20A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 50nC)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220
Packing
Tube
Lead Free
Halogen Free
UTT60N10G-TA3-T
1
2
3
UTT60N10L-TA3-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
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UTT60N10
Preliminary
Power MOSFE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
SYMBOL
VDSS
VGSS
ID
RATINGS
100
UNIT
V
Gate-Source Voltage
±25
V
Continuous
60
A
Drain Current
Pulsed
IDM
100
A
Avalanche Energy
Power Dissipation
Single Pulsed
EAS
560
mJ
W
PD
100
Junction Temperature
Storage Temperature
TJ
150
°C
°C
TSTG
-55 ~ 150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
1.25
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=100V, VGS=0V
VGS=+25V, VDS=0V
VGS=-25V, VDS=0V
100
V
1
µA
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=30A
2
4
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
18
24 mꢀ
CISS
COSS
CRSS
1450 1900 pF
520 680 pF
120 155 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
50
9.3
25
65
nC
nC
nC
ns
VGS=10V, VDS=80V, ID=30A,
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
16.5 45
VDD=30V, ID=1A, RG=50ꢀ,
GS=10V
200 410 ns
70 150 ns
95 200 ns
V
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
60
A
A
ISM
VSD
100
IS=30A, VGS=0V
1.5
V
UNISONIC TECHNOLOGIES CO., LTD
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UTT60N10
Preliminary
Power MOSFE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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