10N50G-TA3-T [UTC]

10A, 500V N-CHANNEL POWER MOSFET; 10A ， 500V N沟道功率MOSFET


型号：	10N50G-TA3-T
厂家：	Unisonic Technologies
描述：	10A, 500V N-CHANNEL POWER MOSFET 10A ， 500V N沟道功率MOSFET
文件：	总6页 (文件大小：174K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

10N50

Preliminary

Power MOSFET

10A, 500V N-CHANNEL

POWER MOSFET

TO-220

DESCRIPTION

The UTC 10N50 is an N-channel mode power MOSFET using

UTC’s advanced technology to provide customers with planar stripe

and DMOS technology. This technology allows a minimum on-state

resistance and superior switching performance. It also can withstand

high energy pulse in the avalanche and commutation mode.

The UTC 10N50 is generally applied in high efficiency switch

mode power supplies, active power factor correction and electronic

lamp ballasts based on half bridge topology.

TO-220F1

FEATURES

* R_DS(ON)=0.68Ω @ V_GS=10V

* High Switching Speed

* 100% Avalanche Tested

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

10N50L-TA3-T

10N50L-TF1-T

10N50G-TA3-T

10N50G-TF1-T

TO-220

TO-220F1

Tube

Note: Pin Assignment: G: Gate D: Drain

S: Source

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10N50

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Continuous (T_C=25°C)

Pulsed (Note 3)

10 (Note 2)

40 (Note 2)

Drain Current

I_DM

Avalanche Current (Note 3)

Single Pulsed (Note 4)

Repetitive (Note 5)

I_AR

E_AS

388

V/ns

Avalanche Energy

E_AR

14.3

Peak Diode Recovery dv/dt (Note 5)

dv/dt

4.5

TO-220

TO-220F1

TO-220

143

Power Dissipation

P_D

1.14

Derate above 25°C

W/°C

TO-220F1

0.38

Junction Temperature

Storage Temperature

T_J

+150

°C

T_STG

-55~+150

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature

4. L = 7mH, I_AS= 10A, V_DD= 50V, R_G= 25ꢀ, Starting T_J= 25°C

5. I_SD≤ 10A, di/dt ≤ 200A/µs, V_DD≤ BV_DSS, Starting T_J= 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

62.5

UNIT

°C/W

Junction to Ambient

θ_JA

TO-220

TO-220F1

0.87

Junction to Case

θ_JC

°C/W

2.58

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10N50

Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

500

2.0

V_DS=500V, V_GS=0V

V_GS=+30V, V_DS=0V

µA

Forward

Reverse

+100 nA

-100 nA

Gate- Source Leakage Current

I_GSS

V_GS=-30V, V_DS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=5A

4.0

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

0.54 0.68

ꢀ

C_ISS

C_OSS

C_RSS

1610 2096 pF

177 230 pF

V_GS=0V, V_DS=25V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

7.5

18.5

V_GS=10V, V_DS=400V, I_D=10A

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

(Note 1, 2)

V_DD=250V, I_D=10A, R_G=25ꢀ

(Note 1, 2)

80 170 ns

141 290 ns

80 165 ns

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I_S

I_SM

V_SD

t_rr

I_S=10A, V_GS=0V

1.4

I_S=10A, V_GS=0V,

dI_F/dt=100A/µs (Note 1)

µC

Q_RR

0.1

Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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10N50

Preliminary

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

V_GS

Same Type

as DUT

Q_G

12V

10V

200nF

V_DS

Q_GS

Q_GD

50kΩ

300nF

V_GS

DUT

3mA

Charge

Gate Charge Test Circuit

Gate Charge Waveforms

Resistive Switching Test Circuit

Resistive Switching Waveforms

BV_DSS

BV_DSS-V_DD

V_DS

E_AS

LI_AS

BV_DSS

R_G

I_D

I_AS

10V

I_D(t)

DUT

t_P

V_DD

_DS(t)

Time

t_P

Unclamped Inductive Switching Waveforms

Unclamped Inductive Switching Test Circuit

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10N50

Preliminary

Power MOSFET

TEST CIRCUITS AND WAVEFORMS(Cont.)

DUT

V_DS

R_G

I_SD

V_GS

V_DD

Driver

Same Type

as DUT

dv/dt controlled by R_G

I_SDcontrolled by pulse period

Peak Diode Recovery dv/dt Test Circuit & Waveforms

Gate Pulse Width

V_GS

Gate Pulse Period

10V

(Driver)

_FM, Body Diode Forward Current

I_SD

di/dt

(DUT)

I_RM

Body Diode Reverse Current

V_DS

(DUT)

Body Diode Recovery dv/dt

V_SD

V_DD

Body Diode Forward

Voltage Drop

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10N50

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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