10N50KG-MT-TF2-T [UTC]

Power Field-Effect Transistor,;


型号：	10N50KG-MT-TF2-T
厂家：	Unisonic Technologies
描述：	Power Field-Effect Transistor,
文件：	总6页 (文件大小：185K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

10N50K-MT

Preliminary

Power MOSFET

10A, 500V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 10N50K-MT is an N-channel mode power MOSFET

using UTC’s advanced technology to provide customers with planar

stripe and DMOS technology. This technology allows a minimum

on-state resistance and superior switching performance. It also can

withstand high energy pulse in the avalanche and commutation

mode.

TO-220F2

The UTC 10N50K-MT is generally applied in high efficiency

switch mode power supplies, active power factor correction and

electronic lamp ballasts based on half bridge topology.



FEATURES

* R_DS(ON)< 0.68 Ω @ V_GS= 10V, I_D= 5 A

* High Switching Speed

* 100% Avalanche Tested



SYMBOL

2.Drain

1.Gate

3.Source

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Tube

Lead Free

Halogen Free

10N50KG-TF2-T

D: Drain S: Source

10N50KL-TF2-T

TO-220F2

Note: Pin Assignment: G: Gate

10N50KL-TF2-T

(1) T: Tube

(1)Packing Type

(2)Package Type

(3)Green Package

(2) TF2: TO-220F2

(3) L: Lead Free, G: Halogen Free and Lead Free



MARKING

www.unisonic.com.tw

1 of 6

QW-R502-A97.b

10N50K-MT

Preliminary

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

I_D

±30

Continuous (T_C=25°C)

Pulsed (Note 3)

10 (Note 2)

40 (Note 2)

Drain Current

I_DM

Avalanche Current (Note 3)

I_AR

Avalanche Energy

Single Pulsed (Note 4)

E_AS

dv/dt

400

V/ns

Peak Diode Recovery dv/dt (Note 5)

Power Dissipation

4.5

P_D

Derate above 25°C

0.38

W/°C

°C

Junction Temperature

Storage Temperature

T_J

+150

T_STG

-55~+150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature

4. L = 8mH, I_AS= 10A, V_DD= 50V, R_G= 25ꢀ, Starting T_J= 25°C

5. I_SD≤ 10A, di/dt ≤ 200A/µs, V_DD≤ BV_DSS, Starting T_J= 25°C



THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

62.5

UNIT

°C/W

Junction to Ambient

Junction to Case

θ_JC

2.58

UNISONIC TECHNOLOGIES CO., LTD

2 of 6

QW-R502-A97.b

www.unisonic.com.tw

10N50K-MT

Preliminary

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

V_DS=500V, V_GS=0V

500

3.0

µA

Forward

Reverse

V_GS=+30V, V_DS=0V

+100 nA

-100 nA

Gate- Source Leakage Current

I_GSS

V_GS=-30V, V_DS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=5A

5.0

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

0.47 0.68

ꢀ

C_ISS

C_OSS

C_RSS

988

149

Output Capacitance

V_GS=0V, V_DS=25V, f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

8.8

7.5

V_GS=10V, V_DS=50V, I_D=1.3A

(Note 1, 2)

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

V_DD=30V, I_D=0.5A, R_G=25ꢀ

(Note 1, 2)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

179 190 ns

85 100 ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

I_S

I_SM

V_SD

I_S=10A, V_GS=0V

1.4

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

3 of 6

QW-R502-A97.b

www.unisonic.com.tw

10N50K-MT

Preliminary

Power MOSFET



TEST CIRCUITS AND WAVEFORMS

V_GS

Same Type

as DUT

Q_G

12V

10V

200nF

V_DS

Q_GS

Q_GD

50kΩ

300nF

V_GS

DUT

3mA

Charge

Gate Charge Waveforms

Gate Charge Test Circuit

Resistive Switching Test Circuit

Resistive Switching Waveforms

BV_DSS

BV_DSS-V_DD

V_DS

E_AS

LI_AS

BV_DSS

I_AS

R_G

I_D

10V

I_D(t)

DUT

t_P

V_DD

_DS(t)

Time

t_P

Unclamped Inductive Switching Waveforms

Unclamped Inductive Switching Test Circuit

UNISONIC TECHNOLOGIES CO., LTD

4 of 6

QW-R502-A97.b

www.unisonic.com.tw

10N50K-MT

Preliminary

Power MOSFET



TEST CIRCUITS AND WAVEFORMS(Cont.)

DUT

V_DS

R_G

I_SD

V_GS

V_DD

Driver

Same Type

as DUT

dv/dt controlled by R_G

I_SDcontrolled by pulse period

Peak Diode Recovery dv/dt Test Circuit & Waveforms

Gate Pulse Width

V_GS

Gate Pulse Period

10V

(Driver)

_FM, Body Diode Forward Current

I_SD

di/dt

(DUT)

I_RM

Body Diode Reverse Current

V_DS

(DUT)

Body Diode Recovery dv/dt

V_SD

V_DD

Body Diode Forward

Voltage Drop

UNISONIC TECHNOLOGIES CO., LTD

5 of 6

QW-R502-A97.b

www.unisonic.com.tw

10N50K-MT

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

6 of 6

QW-R502-A97.b

www.unisonic.com.tw

相关型号：