10N60-B-TA3-T [UTC]
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET; 10安培， 600/650伏特N沟道功率MOSFET
| 型号： | 10N60-B-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总9页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
10N60
Power MOSFET
10 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N60 is a high voltage and high current power MOSFET,
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* 10A, 600V, RDS(ON) =0.73Ω@VGS =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
*Pb-free plating product number: 10N60L
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
TO-220
Normal
Lead Free Plating
10N60L-x-TA3-T
1
2
3
10N60-x-TA3-T
G
D
S
Tube
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Copyright © 2007 Unisonic Technologies Co., Ltd
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10N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
10N60-A
10N60-B
600
650
V
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current
VGSS
IAR
± 30
(Note 1)
9.5
TC = 25°C
9.5
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Energy
ID
A
TC = 100°C
3.3
IDM
EAS
EAR
dv/dt
PD
38
A
mJ
mJ
V/ns
W
Single Pulsed (Note 2)
Repetitive (Note 1)
700
15.6
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
4.5
156
Junction Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
℃
Operating Temperature
Storage Temperature
TOPR
TSTG
℃
℃
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATING
62.5
UNIT
°C/W
°C/W
Junction-to-Ambient
Junction-to-Case
θJC
0.8
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
10N60-A
10N60-B
BVDSS
BVDSS
IDSS
VGS = 0V, ID = 250µA
600
650
V
V
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
1
µA
Forward
Reverse
100 nA
-100 nA
V/°C
IGSS
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID = 250 µA, Referenced to 25°C
0.7
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.75A
2.0
4.0
0.6 0.73
V
ꢀ
CISS
COSS
CRSS
1570 2040 pF
166 215 pF
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
18
24
pF
tD(ON)
tR
tD(OFF)
tF
23
69
55
ns
Turn-On Rise Time
VDD=300V, ID =10A, RG =25ꢀ
(Note 4, 5)
150 ns
Turn-Off Delay Time
144 300 ns
Turn-Off Fall Time
77
44
165 ns
Total Gate Charge
QG
57
nC
nC
nC
VDS=480V, ID=10A, VGS=10 V
Gate-Source Charge
QGS
QGD
6.7
18.5
(Note 4, 5)
Gate-Drain Charge
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10N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IS
VGS = 0 V, IS =10A
1.4
10
V
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
38
A
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
VGS = 0 V, IS = 10A,
dIF / dt = 100 A/µs (Note 4)
420
4.2
ns
µC
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 ꢀ Starting TJ = 25°C
3. ISD ≤ 9.5A, di/dt ≤200A/µs, VDD ≤BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
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10N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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10N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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10N60
Power MOSFET
TYPICAL CHARACTERISTICS
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10N60
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Maximum Drain Current vs. Case Temperature
Maximum Safe Operating Area
102
10
Operation in this Area is United by RDM
10μs
8
6
4
100μs
101
100
1ms
10ms
100ms
DC
Notes:
1.TC=25℃
2.TJ=150℃
3.Single Pulse
2
0
10-1
103
102
Drain-Source Voltage, VDS (V)
100
101
25
50
Case Temperature, TC (℃)
150
75
100
125
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10N60
Power MOSFET
Transient Thermal Response Curve
100
D=0.5
0.2
NOTES:
1.ZθJC(t)=2.5D/W Max
2.Duty Factor,D=t1/t2
3.TJW-TC=PDW-ZθJC(t)
10-1
0.1
0.05
0.02
0.01
PDW
Single pulse
t1
t2
10-2
10-5
10-4
10-3
10-2
100
101
10-1
Square Wave Pulse Duration, t1 (sec)
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10N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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