10N60G-TF3T-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 10N60G-TF3T-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总9页 (文件大小：425K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
10N60
Power MOSFET
10A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* RDS(ON) < 0.75Ω@VGS =10V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
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10N60
Power MOSFET
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
10N60G-TA3-T
10N60G-TF3-T
10N60G-TF1-T
10N60G-TF2-T
10N60G-TF3T-T
10N60G- T2Q-T
10N60G-TQ2-T
10N60G-TQ2-R
1
2
3
S
S
S
S
S
S
S
S
10N60L-TA3-T
10N60L-TF3-T
10N60L-TF1-T
10N60L-TF2-T
10N60L-TF3T-T
10N60L- T2Q-T
10N60L-TQ2-T
10N60L-TQ2-R
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-262
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
Tube
Tube
Tube
Tube
Tube
Tube
TO-263
Tube
TO-263
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING INFORMATION
PACKAGE
TO-220
MARKING
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-262
TO-263
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10N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
± 30
10
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Avalanche Current (Note 2)
A
Continuous
ID
10
A
Drain Current
Pulsed (Note 2)
IDM
38
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
700
15.6
4.5
mJ
mJ
V/ns
Avalanche Energy
EAR
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-262/TO-263
dv/dt
156
TO-220F/TO-220F1
TO-220F3
Power Dissipation
PD
50
W
TO-220F2
52
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
°C
°C
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=14.2mH, IAS=10A, VDD= 50V, RG=25ꢀ, Starting TJ=25°C
4. ISD ≤9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
62.5
UNIT
°C/W
Junction to Ambient
θJA
TO-220
0.8
TO-220F/TO-220F1
TO-220F3
2.5
Junction to Case
θJC
°C/W
TO-220F2
2.4
0.7
TO-262/TO-263
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10N60
Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V, ID=250μA
DS=600V, VGS=0V
VDS=480V, TC=125°С
GS=30 V, VDS=0V
VGS=-30 V, VDS=0V
600
V
V
1
µA
Drain-Source Leakage Current
Gate-Source Leakage Current
100 µA
100 nA
-100 nA
V/°C
Forward
Reverse
V
IGSS
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250µA, Referenced to 25°C
0.7
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
2.0
4.0
0.68 0.75
V
VGS=10V, ID=5A
ꢀ
CISS
COSS
CRSS
RG
1570 2040 pF
166 215 pF
Output Capacitance
VDS=25V, VGS=0V, f=1.0 MHz
VDS=0V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Gate Resistance
18
24
pF
0.25
1.4
ꢀ
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
23
55
ns
Turn-On Rise Time
69 150 ns
144 300 ns
77 165 ns
VDD=300V, ID =10A,
RG =25ꢀ (Note1, 2)
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
44
6.7
57 nC
nC
VDS=480V, ID=10A,
Gate-Source Charge
QGS
QGD
VGS=10 V (Note1, 2)
Gate-Drain Charge
18.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0 V, IS =10A
1.4
10
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
38
A
Reverse Recovery Time
trr
420
4.2
ns
VGS=0 V, IS=10A,
dIF/dt=100A/µs (Note 1)
Reverse Recovery Charge
QRR
µC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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10N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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10N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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10N60
Power MOSFET
TYPICAL CHARACTERISTICS
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10N60
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Transient Thermal Response Curve
100
D=0.5
0.2
NOTES:
1.ZθJC(t)=2.5D/W Max
2.Duty Factor,D=t1/t2
3.TJW-TC=PDW-ZθJC(t)
10-1
0.1
0.05
0.02
0.01
PDW
Single pulse
t1
t2
10-2
10-5
10-4
10-3
10-2
100
101
10-1
Square Wave Pulse Duration, t1 (sec)
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10N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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