10N60G-X-TF1-T [UTC]
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET; 10安培， 600/650伏特N沟道功率MOSFET
| 型号： | 10N60G-X-TF1-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
10N60
Power MOSFET
10 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
1
1
DESCRIPTION
TO-220
The UTC 10N60 is a high voltage and high current power MOSFET,
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
TO-220F
FEATURES
* 10A, 600V, RDS(ON) =0.73Ω@VGS =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
1
TO-220F1
* 100% avalanche tested
* Improved dv/dt capability
1
SYMBOL
TO-263
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
S
10N60L-x-TA3-T
10N60L-x-TF1-T
10N60L-x-TF3-T
10N60L-x-TQ2-R
10N60L-x-TQ2-T
10N60G-x-TA3-T
10N60G-x-TF1-T
10N60G-x-TF3-T
10N60G-x-TQ2-R
10N60G-x-TQ2-T
TO-220
TO-220F1
TO-220F
TO-263
G
G
G
G
G
D
D
D
D
D
Tube
Tube
Tube
Tape Reel
Tube
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-119.E
10N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
10N60-A
10N60-B
600
650
Drain-Source Voltage
Gate-Source Voltage
VDSS
V
VGSS
IAR
± 30
10
V
Avalanche Current (Note 2)
A
Continuous
ID
10
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IDM
38
A
EAS
EAR
dv/dt
700
mJ
mJ
V/ns
W
Avalanche Energy
15.6
4.5
Peak Diode Recovery dv/dt (Note 4)
TO-220
156
Power Dissipation
PD
TO-220F/TO-220F1
TO-263
50
W
178
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°C
°C
°C
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
62.5
0.8
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
θJA
TO-220
θJC
TO-220F/TO-220F1
TO-263
2.5
0.7
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
10N60-A
10N60-B
BVDSS
BVDSS
IDSS
VGS = 0V, ID = 250μA
600
650
V
V
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
1
µA
Forward
Reverse
100 nA
-100 nA
V/°C
IGSS
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID = 250 µA, Referenced to 25°C
0.7
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
0.6 0.73
V
VGS = 10V, ID = 4.75A
ꢀ
CISS
COSS
CRSS
1570 2040 pF
166 215 pF
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
18
24
pF
tD(ON)
tR
tD(OFF)
tF
23
69
55
ns
Turn-On Rise Time
VDD=300V, ID =10A, RG =25ꢀ
(Note 1, 2)
150 ns
Turn-Off Delay Time
144 300 ns
Turn-Off Fall Time
77
44
165 ns
Total Gate Charge
QG
57
nC
nC
nC
VDS=480V, ID=10A, VGS=10 V
(Note 1, 2)
Gate-Source Charge
QGS
QGD
6.7
18.5
Gate-Drain Charge
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10N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IS
VGS = 0 V, IS =10A
1.4
10
V
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
38
A
Reverse Recovery Time
tRR
V
GS = 0 V, IS = 10A,
420
4.2
ns
dIF / dt = 100 A/µs (Note 1)
Reverse Recovery Charge
QRR
µC
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature
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10N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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10N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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10N60
Power MOSFET
TYPICAL CHARACTERISTICS
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10N60
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Maximum Drain Current vs. Case Temperature
Maximum Safe Operating Area
102
10
Operation in this Area is United by RDM
10μs
8
6
4
100μs
101
100
1ms
10ms
100ms
DC
Notes:
1.TC=25℃
2.TJ=150℃
3.Single Pulse
2
0
10-1
103
102
Drain-Source Voltage, VDS (V)
100
101
25
50
Case Temperature, TC (℃)
150
75
100
125
Transient Thermal Response Curve
100
D=0.5
0.2
NOTES:
1.ZθJC(t)=2.5D/W Max
2.Duty Factor,D=t1/t2
3.TJW-TC=PDW-ZθJC(t)
10-1
0.1
0.05
0.02
0.01
PDW
Single pulse
t1
t2
10-2
10-5
10-4
10-3
10-2
100
101
10-1
Square Wave Pulse Duration, t1 (sec)
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10N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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